ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 70V
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 50V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
Input Forward Voltage (VF) 1.2 1.65 V IF = 50mA
Reverse Current (IR)10μAV
R = 4V
Output Collector-emitter Breakdown (BVCEO)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 70 V IC = 1mA , ( Note 2 )
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50 V IC = 1mA , ( Note 2 )
Emitter-collector Breakdown (BVECO)6 VI
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1 20 300 % 10mA IF , 10V VCE
IL2, ILD2, ILQ2 100 500 % 10mA IF , 10V VCE
IL5, ILD5, ILQ5 50 400 % 10mA IF , 10V VCE
IL74, ILD74, ILQ74 12.5 % 16mA IF , 5V VCE
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1 75 % 10mA IF , 0.4V VCE
IL2, ILD2, ILQ2 170 % 10mA IF , 0.4V VCE
IL5, ILD5, ILQ5 100 % 10mA IF , 0.4V VCE
IL74, ILD74, ILQ74 12.5 % 16mA IF , 0.5V VCE
Collector-emitter Saturation V oltage,VCE (SA T) 0.4 V 16mA IF , 2mA IC
Input to Output Isolation Voltage V ISO 5300 V RMS See note 1
Input to Output Isolation Voltage V ISO 7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 2 μsI
F = 10mA
Output Fall Time tf 2 μsV
CC = 5V, RL = 75Ω
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
17/7/08
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
DB91088m-AAS/A7