Preliminary Technical Information Linear Power MOSFET IXTH12N100L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS(on) Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 25 A IAR TC = 25C 12 A EAR TC = 25C V A Maximum Ratings TO-247 (IXTH) (TAB) 30 mJ 1.5 J 400 W -55 to +150 C TJM 150 C Features Tstg -55 to +150 C z EAS PD = 1000 = 12 1.3 TC = 25C TJ G = Gate D = Drain S = Source TAB = Drain TL 1.6 mm (0.063 in) from case for 10 s 300 C z TSOLD Plastic body for 10 s 260 C z Md Mounting torque 0.9/7.9 Nm/lb.in. Weight TO-247 6 g Designed for linear operation International standard package Unclamped Inductive switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Applications z z Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 1000 VGS(th) VDS = VGS, ID = 250 A 3 IGSS VGS = 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 25C TJ = 125C VGS = 20 V, ID = 0.5 ID25 Note 1 (c) 2007 IXYS CORPORATION, All rights reserved V 5 z z z z Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls V 100 nA 50 500 A A 1.3 Advantages z z z Easy to mount Space savings High power density DS99126A(03/07) IXTH12N100L Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 * ID25, Note 1 TO-247 (IXTH) Outline 5 S 2500 pF 300 pF Crss 95 pF td(on) 30 ns 55 ns 110 ns e 65 ns Terminals: 1 - Gate 3 - Source 155 nC 35 nC 55 nC Ciss Coss 1 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 15 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 4.7 (External), tf Qg(on) Qgs VGS = 20 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.31 C/W RthJC RthCS C/W 0.25 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 800 V, ID = 0.25A, TC = 60C 200 Source-Drain Diode Typ. Max. W Dim. 2 P 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = IS, -di/dt = 100 A/s, VR = 100V 1000 ns Note 1: Pulse test, t 300 s, duty cycle, d 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH12N100L Fig. 2. Extended Output Characte ris tics @ 25C Fig. 1. Output Characte ris tics @ 25C 20 12 VGS = 20V 12V 10V 11 10 12V 16 9 14 8 ID - Amperes ID - Amperes VGS = 20V 18 7 9V 6 5 4 8V 3 8 9V 6 8V 2 7V 6V 0 10V 10 4 2 1 12 7V 0 0 0 2 4 6 8 10 12 14 3 6 9 16 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 3. Output Characte ris tics @ 125C Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 12 3.1 VGS = 20V 10V 9V 11 10 2.5 RDS(on) - Normalized 8 7 6 8V 5 4 VGS = 20V 2.8 9 ID - Amperes 12 7V 3 2.2 1.9 I D = 12A 1.6 I D = 6A 1.3 1 2 0.7 6V 5V 1 0 0 5 10 15 20 0.4 25 30 35 -50 -25 V DS - Volts 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 0.5 ID25 Value vs . ID 14 VGS = 20V 2.4 12 TJ = 125C 2.2 10 2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 2.6 0 1.8 1.6 1.4 6 4 TJ = 25C 1.2 8 2 1 0.8 0 0 2 4 6 8 10 12 14 ID - Amperes (c) 2007 IXYS CORPORATION, All rights reserved 16 18 20 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH12N100L Fig. 8. Transconductance Fig. 7. Input Adm ittance 10 16 9 14 8 12 gfs - Siemens ID - Amperes 7 10 8 6 TJ = 125C 4 25C TJ = 40C 6 5 4 3 2 2 1 0 0 4 5 6 7 8 9 10 11 0 2 4 6 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 10 12 14 16 120 140 160 Fig. 10. Gate Charge 20 36 VDS = 500V 18 30 I D = 6A 16 I G = 10mA 14 24 VG S - Volts IS - Amperes 8 ID - Amperes 18 TJ = 125C 12 12 10 8 6 TJ = 25C 4 6 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 V SD - Volts Fig. 11. Capacitance Capacitance - pF f = 1MHz C iss 1000 C oss 100 C rss 10 5 10 15 20 20 40 60 80 100 QG - nanoCoulombs 10000 0 0 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXTH12N100L Fig. 12. Forw ard-Bias Safe Fig. 13. Forw ard-Bias Safe Operating Area @ T C = 25C Operating Area @ T C = 60C 100 100 TJ = 150C TJ = 150C R DS(on) Limit R DS(on) Limit 10 25s 100s ID - Amperes ID - Amperes 25s 1ms DC 1 10 100s 1ms DC 1 10ms 10ms 0.1 0.1 10 100 1000 10000 10 100 1000 10000 V DS - Volts V DS - Volts Fig. 14. Maxim um Transient Therm al Im pedance Z(th)JC - (C/W) 1.00 0.10 0.01 1 10 100 1000 Pulse Width - milliseconds (c) 2007 IXYS CORPORATION, All rights reserved IXYS REF: T_12N100L (7N) 04-05-07-A.xls Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXTH12N100L