© 2007 IXYS CORPORATION, All rights reserved
Features
zDesigned for linear operation
zInternational standard package
zUnclamped Inductive switching (UIS)
rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zProgrammable loads
zCurrent regulators
zDC-DC converters
zBattery chargers
zDC choppers
zTemperature and lighting controls
Advantages
zEasy to mount
zSpace savings
zHigh power density
DS99126A(03/07)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 12 A
IDM TC= 25°C, pulse width limited by TJM 25 A
IAR TC= 25°C 12 A
EAR TC= 25°C 30 mJ
EAS 1.5 J
PDTC= 25°C 400 W
TJ -55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque 0.9/7.9 Nm/lb.in.
Weight TO-247 6 g
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 1000 V
VGS(th) VDS = VGS, ID = 250 μA35V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS TJ = 25°C50μA
VGS = 0 V TJ = 125°C 500 μA
RDS(on) VGS = 20 V, ID = 0.5 ID25 1.3 Ω
Note 1
TO-247 (IXTH)
G = Gate D = Drain
S = Source TAB = Drain
Linear Power MOSFET
With Extended FBSOA IXTH12N100L
(TAB)
Preliminary Technical Information
VDSS = 1000 V
ID25 = 12 A
RDS(on) ≤≤
≤≤
≤ 1.3 ΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH12N100L
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 • ID25, Note 1 5 S
Ciss 2500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 300 pF
Crss 95 pF
td(on) 30 ns
trVGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns
td(off) RG= 4.7 Ω (External), 110 ns
tf65 ns
Qg(on) 155 nC
Qgs VGS = 20 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 35 nC
Qgd 55 nC
RthJC 0.31 °C/W
RthCS 0.25 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 800 V, ID = 0.25A, TC = 60°C 200 W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 12 A
ISM Repetitive; pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0 V, 1.5 V
Note 1
trr IF = IS, -di/dt = 100 A/μs, VR = 100V 1000 ns
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Note 1: Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %
© 2007 IXYS CORPORATION, All rights reserved
IXTH12N100L
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- Ampe res
V
GS
= 20V
12V
7V
10V
9V
8V
Fig. 3. Output Characteristics
@ 125
º
C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Am peres
V
GS
= 20 V
10V
9V
6V
5V
8V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 2 4 6 8 10121416
V
DS
- Volts
I
D
- Ampe res
V
GS
= 20V
12V
10V
7V
6V
8V
9V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- No rmal ized
I
D
= 12 A
I
D
= 6A
V
GS
= 2 0V
Fig. 6. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amp eres
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 2 4 6 8 101214161820
I
D
- Amperes
R
DS(on)
- Norm alized
T
J
= 125ºC
T
J
= 2 5ºC
V
GS
= 20V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH12N100L
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0 20 40 60 80 100 120 140 160
Q
G
- nanoCoulombs
V
G S
- Vo lts
V
DS
= 500V
I
D
= 6A
I
G
= 10 m A
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
4567891011
V
GS
- Volt s
I
D
- Amp eres
T
J
= 125ºC
25ºC
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
10
0246810121416
I
D
- Amperes
g
fs
- Siemens
T
J
= -
40ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
6
12
18
24
30
36
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amp eres
T
J
= 125ºC
T
J
= 25 ºC
© 2007 IXYS CORPORATION, All rights reserved
IXTH12N100L
Fig. 14. Maximum Transient Thermal Impedance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
Z
(th)JC
- (ºC/W)
Fig. 12. Forward-Bias Safe
Operating Area @ T
C
= 25
º
C
0.1
1
10
100
10 100 1000 10000
V
DS
- Volts
I
D
- Am peres
100µs
1ms
DC
T
J
= 150ºC
R
DS(on)
Lim it
10ms
25µs
Fig. 13. Forward-Bias Safe
Operating Area @ T
C
= 60
º
C
0.1
1
10
100
10 100 1000 10000
V
DS
- Volts
I
D
- Am peres
100µs
1ms
DC
T
J
= 150ºC
R
DS(on)
Lim it
10ms
25µs
IXYS REF: T_12N100L (7N) 04-05-07-A.xls
