G E SOLID STATE Oo. pe J sa7soa1 017643 2 T 3875081 GE SOLID STATE Ultra-Fast-Recovery Rectifiers O1E 17643 p Teo3-/7 BYW51-100, BYW51-150, BYW51-200 File Number 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers Features: = Ultre fast recovery time (< 35 ns) u Low forward voltage = Low thermal resistance Planar design s Wire-bonded construction Applications: General purpose = Power switching circuits to 100 kHz = Full-wave rectification The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectiflers (trr< 35 ns). They use a planar lon-Implanted epltaxtal construction. These devices are intended for use as output rectifiers and fly-wheel diodes in a variety of high-frequency pulse-width- modulated and switching regulators. Their low stored TERMINAL DESIGNATIONS [ ANODE 1 CATHODE. -w CATHODE FELANGE) OQ ee f C ANODE 2 vecs~ 40708 TOP VIEW JEDEC TO-220AB charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. All are supplied in TO-220AB plastic packages. MAXIMUM RATINGS, Absolute-Maximum Values, per Junction: BYW BYW BYW 51-100 51-150 51-200 VRBAM voccvcevcevseucns bene v eed een eeneereeeeeennes sees vn eeeae aves 100 150 200 v VASM oo eee ee 110 165 220 Vv IFAM, tp < 10 ys, 100 100 100 A {F(RMS), total.... 20 20 20 A lr(Average), total... ccerseeees 20 20 20 A Te = 125C, 6 = 0.5 o WESM(SUrge) wc. ccs eeveeereaeee eeeeeeee seenee bevreeeane peeeneedreecenes 100 100 100 A tp = 10 ms, sinusoidal . Pp, Tc = 125C... 20 20 20 Ww Ti vacacecerveven tee sveonecenee foeees detereccconre eoecrsessesee 7404150 -40 + 150 -40 + 150 c Tt (Lead temperatura during soldering) At distance > 1/8 in, (3.17 mm) from case for 10S max.rcsessecceae tes 260 260 260 c 648 1186 A-05G E SOLID STATE O1 DE Jsa7sos1 OOL?RY4 & TU | 3875081 GE SOLID STATE O1 17644. dD 1-O3-~/7 : Ultra-Fast-Recovery Rectiflers BYW51-100, BYW51-150, BYW51-200 ELECTRICAL CHARACTERISTICS, per Junction TEST CONDITIONS LIMITS CHARACTERISTICS Voltage | Current BYW51-100 BYW51-150 BYW51-200 | UNITS Tw Va c v A Min. | Max. | Min. | Max. | Min. | Max. ; 100 - 5 _ - 25 150 _ _ - 5 _ _ vA ia 200 = = _ = 5 100 _- 1 - - - _ 100 150 - - - i _ _ mA 200 = - = _ = 1 Ve 25 8 - 0.95 - 0.95 - 0.95 V 400 8 = 0.89 - 0.89 -= 0.89 ter 25 1(a) _ 35 - 35 ~ 35 ns Rac, per leg - 2.5 2.6 - 2.5 Rac, total - 1.3 - 13 - 1.3 | C/W Rasa ~- 60 = 60 = 60 G@ 25 10 0 All types (typ.) 40 pF (a) dir/dt > 50A/ys, Iam(rec) < 1A, lan = 0.25A ValPK}* Yay t 10 100 ' 0 190 1000 HUMBER OF HALF-CYCLES IN SUAGE DURATION AT 50 He PULSE WIDTH (igh me 92C$-39269 eace-3dere Fig. 1 - Peak surge forward current vs. surge Fig. 2 - Thermal impedance vs. pulse width duration, (per junction). ne Tys258 pye25ec + Tyet00%e 7 ee Ty +5086 INSTANTANEOUS FORRAAD VOLTADE DROP {vp )-V 92rce-34ee? Fig. 3- Typical forward current vs. forward- voltage drop. Fig. 4 - Typical reverse current vs. voltage. Vv etcs-14asee Te _ 649G E SOLID STATE OL DE ffss7soar corms b Le 3875081 GE SOLID STATE "O1E 17645) op TTOSAIT Ultra-Fast-Recovery Rectifiers RUR-810, RUR-815, RUR-820 s File Number 1355 *8-A, High Speed, High Efficiency Epitaxial Silicon Rectifiers Features: a Ultra fast recovery time (<5 ns) = Low forward voltage w Low thermal resistance m Planar design Wire-bonded construction Applications: ws General Purpose @ Power switching circuits to 100 KHz = Output rectification in switching power supplies The RCA RUR-810, RUA-815, and RUR-820 are low for- ward voltage drop ultra fast-recovery rectiflers (trr <35 ns). They use a glass passivated ion-implanted epitaxial construction. These devices are intended for use as output rectifiers and fly wheel diodes in a variety of high-frequency pulse-width modulated and switching regulators. Their low stored MAXIMUM RATINGS, Absolute-Maximum Values: VRM IF (Average) Ta = 25C (No Heat Sink)... .. sce cee enna tere ee ee eeneenens Ta = 25C (With Heat Sink)*... Te = 125C ccc cece teeter reenter ere ert etree ree ents {FSM (surge) 8.3ms, 1/2 cycle, non-repetitive ........ cece eee eer tenes TSIG, Tyee sccccevcesenseevennsvaveveren te vereeeneceeaterreeece T. (Lead temperature during soldering) At distance > 1/8in. (3.17mm) from case for 10 S max. (a) Wakefield type 295 heat sink with convection cooling 650 TERMINAL DESIGNATIONS ANODE CATHODE |, {FLANGE > O S CATHODE TOP VIEW 9205-39566 JEDEC TO-220AC charge and attendant fast reverse-recovery behavior mini- mize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. All are supplied in TO-220AC plastic packages. "Formerly RCA Dev. No. TA9223A, TA9223B, and TA9223C, respectively. RUR-810 RUR-815 RUR-820 seeeeees 100 150 200 v sees . 3 A 8 A pee eeeee 8 A sa veenes 100 A saneeree - -55 to 150 c 260 c 1188 A~-0?7G E SOLID STATE OL De Psarsoa: corey 6 Bf 3875081 G E SOLID STATE ~ O1E 17646 D T-O3-|7 Uitra-Fast-Recovery Rectifiers . RUR-810, RUR-815, RUR-820 ELECTRICAL CHARACTERISTICS TEST CONDITIONS LIMITS CHARAC- Voltage | Current RUR-810 RUR-815 RUR-620 UNITS TERISTICS Ty Va le C Vv A Min, Max, Min., Max. Min. Max. 100 - 5 - - _ - 25 150 _ ~ _ 5 ~ z 200 _ - - - = In 100 = 400 = = = 100 150 _ - _ 400 ~_ _ 200 _- - ~ ~ 400 25 8 = 0.85 = 0.05 = 7 y vr 100 8. - 0.89 - 0.89 - 0.04 ta 25 2a) = 35 = 35 = 35 ng R = 528 = 225 = 2251 Ran _ 60 _ 60 _ eo | OW Cs 25 10 0 40 Typ. 40 Typ. 40 Typ. pF (a} dir/dt > 40A/ps, fam (rec) < 1A, lan = 0.25A t 10 NUMBER OF HALF-CYCLES IN SURGE QUAATION AT 60 Hr 100 weed 34arg Fig, 1 Peak surge forward current vs, surge duration. i | Teese YN Ty c1s0 INSTANTANEOUS FORWARD OROP (vp )- 9209-34827 Fig. 3 Typical forward current vs. forward-voltage drop. w 100 PULSE WIDTH {ipl-ms $tCi-94086 Fig. 2 ~ Thermal impedance vs. pulse width. AGE IN Ye OF - 9208-34026 Fig. 4 Typical reverse current vs. voltage. 651 pee ean = ca nnG E SOLID STATE 3875081 GE SOLID STATE ~ 7077 - Ultra-Fast-Recovery Rectitlers RUR-D810, RUR-D815, RUR-D820 O01 De fj sa7soa1 DOL?b4? O iE O1E 17647 0 TO317 File Number 1356 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers Features: w Ultra fast recovery time [<35 ns] a Low forward voltage ws Low thermal resistance @ Planar design w Wire-bonded construction Applications: @ General Purpose @ Power switching circuits to 100 kHz & Full-wave rectification The RCA RUR-D810, RUA-D815, and RUR-D820"* are low forward voltage drop ultra fast-recovery rectifiers (trr <<35 ns), They use a glass passivated ion-implanted epitaxial construction. These devices are intended for use as output rectifiers and fly wheel diodes in a variety of high-frequency pulse-width modulated and switching regulators. Their tow stored TERMINAL DESIGNATIONS ANODE 4 |b CATHOOE en C ANODE2 9208-40208 CATHODE - (FLANGED oe TOP VIEW JEDEC TO-220AB charge and attendant fast reverse recovery behavior mini- mize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. , Ail are supplied in TO-220A8 plastic packages. MAXIMUM RATINGS, Absolute-Maximum Values, per Junction: VRM IF (Average) Ta = 25C (No Heat Sink) ......... cece reser enpereserees Ta = 25C (With Heat Sink)"..,,...00: Te = 126C IFSM (surge) 8.3ms, 1/2 cycle, non-repetitive Tstg, Taiscccecrecetcetenernvenseeetees Tu (Lead temperature during soldering) At distance > 1/8in. (3.17mm) from case for 10 S max, (a) Wakefield type 295 heat sink with convection cooling 652 Formerly RCA Dev, No. TA9224A, TA9224B, and TA9224C, respectively, RUR-D810 RUA-D815 RUR-D820 theenoen 100 150 200 v 3 A sane 8 A ceveeene 8 A 100 A ~65 to 150 c 260 C 1190 A-09G E SOLID STATE O1 DE fj 3475081 OOL?7b4a 2 i 3875081 GE SOLID STATE Ultra-Fast-Recovery Rectitiers 1191 ELECTRICAL CHARACTERISTICS, per junction RUR-D810, RUR-D815, RUR-D8&20 TEST CONDITIONS LIMITS CHARAC- Vollage | Current RUR-D810 RUR-DS15 RUR-D820 UNITS TERISTICS Ty Va le c v A Min. Max. Min, Max, Min. Max. 100 - & = = _ ~ 25 150 - - - _ - 200 = - _ _ = 5 tn 100 = 400 = = = = HA 100 150 - _ _ 400 _ _ 200 - - _ _ - 400 25 8. _- 0.95 - 0.95 - 1 V vr 4100 8 - 0.89 = 0.89 - 0.94 ta 25 8(a) _ 35 _- 35 - 35 ns Rse = 2.25 = 2.25 = z25 |, Roya - 60 _ 60 - eo | ow Cc, 25 10 0 40 Typ. 40 Typ. 40 Typ. pF (a) dip/dt > 40A/ys, Iau (rec) < 1A, Inn = 0.25A t 19 HUMBER OFHALF~CYCLES IN SURGE QURATION AT 60 Hz REAPPUED Vp "Yau azcs-34025 100 Fig. 1 Peak surge foward current vs, surge duration. I Ty25 Tystoore Ty 1508 oO 9 4 06 2 4 INSTANTANEOUS FORWARD YOLTAGE DAOP ( ve)-V enca-sae27 Fig. 3 Typical forward current vs. forward-voltage drop. THERMAL wo 100 PULSE WIDTH yim S2CH-340t8 Fig. 2 ~ Thermal impedance vs. puise width (per junction), 8 CURRENT Cyn A 5s 8 -v OtCe-34ene Fig. 4 Typical reverse current vs. voltage. A-10 653 Ole 17648 DO TOS3-/{7