/TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 EasyPIMTM/IGBT3NTC EasyPIMTMmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC VCES = 600V IC nom = 20A / ICRM = 40A * * * TypicalApplications * AuxiliaryInverters * AirConditioning * MotorDrives * * VCEsat * IGBT3 * VCEsat ElectricalFeatures * LowSwitchingLosses * LowVCEsat * TrenchIGBT3 * VCEsatwithpositiveTemperatureCoefficient * Al2O3 * * PressFIT * MechanicalFeatures * Al2O3SubstratewithLowThermalResistance * Compactdesign * PressFITContactTechnology * Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 600 V ContinuousDCcollectorcurrent TC = 95C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 20 29 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 40 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 94,0 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 20 A, VGE = 15 V IC = 20 A, VGE = 15 V IC = 20 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,29 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat A A typ. max. 1,55 1,70 1,80 2,00 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,20 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,10 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,034 nF - Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,02 0,02 0,02 s s s tr 0,013 0,016 0,017 s s s td off 0,12 0,14 0,15 s s s tf 0,07 0,095 0,10 s s s () Turn-ondelaytime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGon = 18 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGon = 18 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGoff = 18 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGoff = 18 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH Tvj = 25C VGE = 15 V, di/dt = 1800 A/s (Tvj = 150C) Tvj = 125C RGon = 18 Tvj = 150C Eon 0,32 0,44 0,49 mJ mJ mJ ( Turn-offenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH Tvj = 25C VGE = 15 V, du/dt = 4100 V/s (Tvj = 150C) Tvj = 125C RGoff = 18 Tvj = 150C Eoff 0,44 0,56 0,59 mJ mJ mJ SCdata VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE *di/dt ISC 140 100 A A Thermalresistance,junctiontocase IGBT/perIGBT RthJC 1,45 1,60 K/W Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 1,25 K/W Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 2 tP 8 s, Tvj = 25C tP 6 s, Tvj = 150C 150 C /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 600 V IF 20 A IFRM 40 A It 49,0 45,0 /CharacteristicValues min. typ. max. 1,60 1,55 1,50 2,00 As As Forwardvoltage IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 20 A, - diF/dt = 1800 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 34,0 38,0 40,0 A A A Recoveredcharge IF = 20 A, - diF/dt = 1800 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 1,00 1,75 2,20 C C C Reverserecoveryenergy IF = 20 A, - diF/dt = 1800 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,21 0,37 0,47 mJ mJ mJ V V V Thermalresistance,junctiontocase /perdiode RthJC 1,95 2,15 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 1,35 K/W Temperatureunderswitchingconditions Tvj op -40 150 C ,/Diode,Rectifier /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 800 V () MaximumRMSforwardcurrentperchip TC = 80C IFRMSM 50 A MaximumRMScurrentatrectifieroutput TC = 80C IRMSM 60 A Surgeforwardcurrent tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C IFSM 450 360 A A I2t- It-value tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C It 1000 640 As As /CharacteristicValues min. typ. max. VF 0,85 V Tvj = 150C, VR = 800 V IR 0,10 mA Thermalresistance,junctiontocase /perdiode RthJC 0,95 1,05 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,95 K/W Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 Forwardvoltage Tvj = 150C, IF = 20 A Reversecurrent 3 C /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 IGBT,-/IGBT,Brake-Chopper /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 600 V ContinuousDCcollectorcurrent TC = 95C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 20 29 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 40 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 94,0 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 20 A, VGE = 15 V IC = 20 A, VGE = 15 V IC = 20 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,29 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat A A typ. max. 1,55 1,70 1,80 2,00 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,20 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,10 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,034 nF - Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,03 0,03 0,03 s s s tr 0,022 0,028 0,03 s s s td off 0,20 0,24 0,25 s s s tf 0,07 0,11 0,12 s s s () Turn-ondelaytime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGon = 30 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGon = 30 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGoff = 30 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 20 A, VCE = 300 V VGE = 15 V RGoff = 30 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH VGE = 15 V RGon = 30 Tvj = 25C Tvj = 125C Tvj = 150C Eon 0,45 0,55 0,60 mJ mJ mJ ( Turn-offenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH VGE = 15 V RGoff = 30 Tvj = 25C Tvj = 125C Tvj = 150C Eoff 0,50 0,56 0,60 mJ mJ mJ SCdata VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE *di/dt tP 8 s, Tvj = 25C tP 6 s, Tvj = 150C ISC 140 100 A A Thermalresistance,junctiontocase IGBT/perIGBT RthJC 1,45 1,60 K/W Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 1,25 K/W Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 4 150 C /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 -/Diode,Brake-Chopper /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 600 V IF 10 A IFRM 20 A It 12,5 9,50 /CharacteristicValues min. typ. max. 1,60 1,55 1,50 2,00 As As Forwardvoltage IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 10 A, - diF/dt = 1500 A/s (Tvj=150C) VR = 300 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 18,0 19,0 21,0 A A A Recoveredcharge IF = 10 A, - diF/dt = 1500 A/s (Tvj=150C) VR = 300 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 0,50 0,85 1,10 C C C Reverserecoveryenergy IF = 10 A, - diF/dt = 1500 A/s (Tvj=150C) VR = 300 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,11 0,20 0,26 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC 2,90 3,20 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 1,40 K/W Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW V V V C /NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 5 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 11,5 6,3 mm Clearance -/terminaltoheatsink -/terminaltoterminal 10,0 5,0 mm Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 30 nH RCC'+EE' RAA'+CC' 8,00 4,00 m Tstg -40 125 C Anpresskraft fur mech. Bef. pro Feder mountig force per clamp F 20 - 50 N Weight G 24 g , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 25 A rms per connector pin preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 6 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 40 40 Tvj = 25C Tvj = 125C Tvj = 150C 32 32 28 28 24 24 20 20 16 16 12 12 8 8 4 4 0 0,0 0,3 0,6 0,9 VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V 36 IC [A] IC [A] 36 1,2 1,5 1,8 VCE [V] 2,1 2,4 2,7 0 3,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=18,RGoff=18,VCE=300V 40 1,4 Tvj = 25C Tvj = 125C Tvj = 150C 36 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 1,2 32 1,0 28 24 0,8 E [mJ] IC [A] 0,5 20 0,6 16 12 0,4 8 0,2 4 0 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 7 0 5 10 15 20 IC [A] 25 30 35 40 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=20A,VCE=300V IGBT, transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 2,0 10 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 1,6 ZthJH : IGBT E [mJ] ZthJH [K/W] 1,2 0,8 1 0,4 i: 1 2 3 4 ri[K/W]: 0,1901 0,4681 1,003 1,039 i[s]: 0,0005 0,005 0,05 0,2 0,0 0 20 40 60 80 0,1 0,001 100 120 140 160 180 200 RG [] IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=18,Tvj=150C 1 10 40 IC, Modul IC, Chip 40 36 36 Tvj = 25C Tvj = 125C Tvj = 150C 32 32 28 28 24 24 IF [A] IC [A] 0,1 t [s] ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 44 20 20 16 16 12 12 8 8 4 4 0 0,01 0 200 400 VCE [V] 600 0 800 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 8 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=18,VCE=300V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=20A,VCE=300V 0,8 0,7 Erec, Tvj = 125C Erec, Tvj = 150C Erec, Tvj = 125C Erec, Tvj = 150C 0,6 0,6 0,5 E [mJ] E [mJ] 0,4 0,4 0,3 0,2 0,2 0,1 0,0 0 4 8 12 16 20 24 IF [A] 28 32 36 0,0 40 , transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 20 40 60 80 100 120 140 160 180 200 RG [] ,) forwardcharacteristicofDiode,Rectifier(typical) IF=f(VF) 10 40 ZthJH : Diode Tvj = 25C Tvj = 150C 36 32 28 IF [A] ZthJH [K/W] 24 1 20 16 12 8 i: 1 2 3 4 ri[K/W]: 0,3013 0,7006 1,3873 0,9109 i[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 4 0 10 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 9 0,0 0,2 0,4 0,6 VF [V] 0,8 1,0 1,2 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 IGBT,-) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V -) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 40 20 Tvj = 25C Tvj = 125C Tvj = 150C 18 32 16 28 14 24 12 IF [A] IC [A] 36 20 10 16 8 12 6 8 4 4 2 0 0,0 0,3 0,6 0,9 1,2 1,5 1,8 VCE [V] 2,1 2,4 2,7 0 3,0 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[] 10000 1000 100 0 20 40 60 80 100 TC [C] 120 140 160 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 10 Tvj = 25C Tvj = 125C Tvj = 150C 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 /circuit_diagram_headline J /packageoutlines Infineon preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 11 /TechnicalInformation IGBT- IGBT-modules FB20R06W1E3_B11 www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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