N-Channel Enhancement-Mode
MOS Transistor
2N7000 / BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vert ical DMOS technology. The
device is well suited for switching applications where BV of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is hous ed in a plastic T O-9 2 package .
ORDERING INFORMATION
Part Package Temperature Range
2N7000 Plastic TO -92 -55oC to +150oC
BS170L Plastic TO -92 -55oC to +150oC
X2N7000 Sorte d Chips in Carrier s -55oC to +150oC
CORPORATION
1
2
3
TO-92
(TO-226AA)
BOTTOM VIEW
1
2
3
1
2
3
SOURCE
GATE
DRAIN
1
2
3
2N7000
PIN CONFIG UR ATI ON
PRODUCT SUM MA R Y
P/N V(BR)DSS
(V) rDS(ON)
(Ω)ID
(A)
2N7000 60 5 0.2
BS170 60 5 0.5
CD5
BOTTOM VIEW
1
2
3
1
2
3
DRAIN
GATE
SOURCE
3
2
1
BS170L
2N7000 / BS170L
CORPORATION
ABSOLUTE M AXIM UM R A T INGS (TA = 2 5oC unless otherwise spe cified )
SYMBOL PARAM ETERS LIMITS UNITS TEST CONDITIONS
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±40
IDContinuous Drain Current 0.2 ATA = 25oC
0.13 TA = 100oC
IDM Pulsed Drain Current10.5
PDPower Dissipatio n10.4 WTA = 25oC
0.16 TA = 100oC
TJOpe rati ng Junction Temp era tu re Rang e -5 5 to 150 oCTstg Storage Temp erature Range -5 5 to 150
TLLead Temperature (1/16" from case for 10 sec.) 300
THERMA L RESISTANCE RATINGS
SYMBOL THERM AL RESISTANCE LIMITS UNITS
RthJA Junction-to-Ambient 312.5 K/W
NOTE: 1. Pulse width limited by maxim um junction temperature.
SPECIFICATIONS1
SYMBOL PARAMETER MIN TYP2MAX UNIT TEST CONDITIONS
STATIC
V(BR)DSS Drain-Source Breakdown Voltage 60 70 VID = 10µA, VGS = 0V
VGS(th) Gate-Th resho ld Vol tage 0 .8 1.9 3 VDS = VGS, ID = 1mA
IGSS Gate-Body Le akag e ±10 nA VGS = ±15V, VDS = 0V
IDSS Zero Gate Voltag e Drain Curren t 1µAVDS = 48V, VGS = 0V
1000 TC = 125oC
ID(ON) On-State Drain Current375 210 mA VDS = 10V, VGS = 4.5V
rDS(ON) Drain-Source On-Resista nce34.8 5.3 Ω
4VGS = 4 .5V, ID = 75mA
2.5 5 VGS = 10V, ID = 0.5A
4.4 9 TC = 125oC
VDS(ON) Drain-Source On-Voltage30.36 0.4 V
4VGS = 4 .5V, ID = 75mA
1.25 2.5 VGS = 10V, ID = 0.5A
2.2 4.5 TC = 125oC4
gFS Forward Transconduct ance3100 170 mS VDS = 10V, ID = 0.2 A
gOS Common Source Output Conductance3, 4 500 µSV
DS = 5V, ID = 50mA
DYNAMIC
Ciss Input Capacitance 16 60 pF VDS = 25V, VGS = 0V, f = 1MHz
Coss Output Capacitance411 25
Crss Reverse Transfer Capacitance 2 5
SWITCHING
tON T urn-On T ime 7 10 nS
VDD = 15V, RL = 25Ω, ID = 0.5A
VGEN = 10V, RG = 25Ω
(Switching time is essentially
independent of operating temperature)
tOFF Turn-Off Time 7 10
NOTES: 1. TA = 25oC unless otherwise specified.
2. For design aid only, not subject to prod uctio n testin g.
3. Pulse test; PW = ≤300µS, duty cycle ≤3%.
4. Thi s p aram eter not registered wi th JEDEC.
