JANTX2N3440L - Microsemi Corp.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/368

T4-LDS-0022 Rev. 3 (110088) Page 1 of 4

DEVICES LEVELS

2N3439 * 2N3440 JAN

2N3439L * 2N3440L JANTX

2N3439UA * 2N3440UA JANTXV

* Also Qualified for JANS level. * JANS

ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)

Parameters / Test Conditions Symbol 2N3439 2N3440 Unit

Collector-Emitter Voltage VCEO 350 250 Vdc

Collector-Base Voltage VCBO 450 300 Vdc

Emitter-Base Voltage VEBO 7.0 Vdc

Collector Current IC 1.0 Adc

Total Power Dissipation

UA

@ TA = +25°C (1)

@ TC = +25°C (2)

@ TSP = +25°C (3)

PT

0.8

5.0

2.0

W

Operating & Storage Temperature Range Top , Tstg -65 to +200 °C

NOTES:

1) Derate linearly @ 4.57mW/°C for TA > +25°C

2) Derate linearly @ 28.5mW/°C for TC > +25°C

3) Derate linearly @ 14mW/°C for TSP > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

350

250

Vdc

IC = 10mAdc

RBB1 = 470Ω;VBB1 = 6V

L = 25mH (min); f = 30 – 60Hz

2N3439 / L / UA

2N3440 / L / UA

Collector-Emitter Cutoff Current

ICEO

2.0

2.0 µAdc

VCE = 300Vdc

VCE = 200Vdc 2N3439 / L / UA

2N3440 / L / UA

Emitter-Base Cutoff Current

VEB = 7.0Vdc IEBO 10 µAdc

Collector-Emitter Cutoff Current

ICEX

5.0

µAdc

VCE = 450Vdc, VBE = -1.5Vdc

VCE = 300Vdc, VBE = -1.5Vdc

2N3439 / L / UA

2N3440 / L / UA

Collector-Base Cutoff Current

ICBO

2.0

5.0

µAdc

VCB = 360Vdc

VCB = 250Vdc

VCB = 450Vdc

VCB = 300Vdc

2N3439 / L / UA

2N3440 / L / UA

2N3439 / L / UA

2N3440 / L / UA

TO-5

2N3439L, 2N3440L

TO-39 (TO-205AD)

2N3439, 2N3 440

UA

2N3439UA, 2N3440UA

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0022 Rev. 3 (110088) Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 20mAdc, VCE = 10Vdc

IC = 2.0mAdc, VCE = 10Vdc

IC = 0.2mAdc, VCE = 10Vdc

hFE

40

30

10

160

Collector-Emitter Saturation Voltage

IC = 50mAdc, IB = 4.0mAdc VCE(sat) 0.5 Vdc

Base-Emitter Saturation Voltage

IC = 50mAdc, IB = 4.0mAdc VBE(sat) 1.3 Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz |hfe| 3.0 15

Forward Current Transfer Ratio

IC = 5.0mAdc, VCE = 10V, f = 1.0kHz hfe 25

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 10 pF

Input Capacitance

VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 75 pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Turn-On Time

VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc ton

1.0 µs

Turn-Off Time

VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc toff

10 µs

SAFE OPERATING AREA

DC Tests

TC = +25°C, 1 Cycle, t = 1.0s

Test 1

VCE = 5.0Vdc, IC = 1.0Adc Both Types

Test 2

VCE = 350Vdc, IC = 14mAdc 2N3439 / L / UA

Test 3

VCE = 250Vdc, IC = 20mAdc 2N3440 / L / UA

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0022 Rev. 3 (110088) Page 3 of 4

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18

mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be

measured by direct methods or by gauging procedure.

8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is

uncontrolled in and beyond LL minimum.

9. All three leads.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

14. For transistor types 2N3439L and 2N3440L (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45

mm) max. For transistor types 2N3439 and 2N3440 (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch

(19.05 mm) max.

FIGURE 1. Physical dimensions (similar to TO-5 and TO-39).

Dimensions

Symbol Inches Millimeters Note

Min Max Min Max

CD .305 .335 7.75 8.51 6

CH .240 .260 6.10 6.60

HD .335 .370 8.51 9.40

LC .200 TP 5.08 TP 7

LD .016 .019 0.41 0.48 8,9

LL See note 14

LU .016 .019 0.41 0.48 8,9

L1 .050 1.27 8,9

L2 .250 6.35 8,9

P .100 2.54 7

Q .030 0.76 5

TL .029 .045 0.74 1.14 3,4

TW .028 .034 0.71 0.86 3

r .010 0.25 10

α 45° TP 45° TP 7

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0022 Rev. 3 (110088) Page 4 of 4

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension "CH" controls the overall package thickness.

When a window lid is used, dimension "CH" must increase

by a minimum of .010 inch (0.254 mm) and a maximum of

.040 inch (1.020 mm).

4. The corner shape (square, notch, radius, etc.) may vary at the

manufacturer's option, from that shown on the drawing.

5. Dimensions " LW2" minimum and "L3" minimum and the

appropriate castellation length define an unobstructed three-

dimensional space traversing all of the ceramic layers in

which a castellation was designed. (Castellations are

required on bottom two layers, optional on top ceramic

layer.) Dimension " LW2" maximum and "L3" maximum

define the maximum width and depth of the castellation at

any point on its surface. Measurement of these dimensions

may be made prior to solder dipping.

6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch

(0.15mm) for solder dipped leadless chip carriers.

7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.

Dimensions

Symbol Inches Millimeters Note

Min Max Min Max

BL .215 .225 5.46 5.71

BL2 .225 5.71

BW .145 .155 3.68 3.93

BW2 .155 3.93

CH .061 .075 1.55 1.90 3

L3 .003 .007 0.08 0.18 5

LH .029 .042 0.74 1.07

LL1 .032 .048 0.81 1.22

LL2 .072 .088 1.83 2.23

LS .045 .055 1.14 1.39

LW .022 .028 0.56 0.71

LW2 .006 .022 0.15 0.56 5

Pin no. 1 2 3 4

Transistor Collector Emitter Base N/C