SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,64 TYPE No. $T01 STS01Tt JAN2N852t 2S95At A136 A139 A344t A749 BSW92t NS383 PEPSt PEP8t ST53t STS7t TK257A ZT190t ZT193t 2N706B/5 1t 2N2217/51t 2N2967t S7EPBt BSV53t CS$2222t P346t QD102-71* * $15658 BF31 MM 1943 ST6110t 78EPt SE5030A 2N2368/5 1t 2N709A/5 IT 2N2475/51t 2N918/51 BFW98 DISS. @25C 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m IN |ME fab FREE AIR 250M5A|500u 270M4|500u 300MA/2.0m Fm 300MA) 1.7m 300M |3.0m 300M |3.0m 300Msa4|2.0m 300M |2.0m 300ms |3.0m 300M _ |2.0m 300MA |2.0m 300MA |2.0m 300MSA 300M5A 300MEA 300MSA/2.4m 300MA|2.0m fm 400M8A|2.5m m 400M5 |1.7m .#m 400M84| 1.7m 400M54|3.0m 400M {2.4m 400M8 fm 400M5A|2.0m .#m 400M84| 1.7m .m 400M5A|3.0m 450M8 |2.5m m 500MA|2.0m m 500M |1.6m .#m 600M3A/3.0m 600M5A/2.7m 640MA | 1.7m fm 800M | 1.6m am 800M5 |1.7m am Q960MA | 1.7m 1,.0G8 D.A.T.A. A Pp 8S IN ORDER OF 22 60 380 |1. 30 2-0m% |900 14k [5.5 5.0% |2.0m |900 15k [5.5 35D 30 5.00 |2. og SYMBOLS AND CODES : EXPLAINED IN INTERPRETER MAX COLLECTOR DISSIPATION Cob /STRUCIY200 jE 0 -TURE s/a |AD TO200/D E TO18 @ TO18 TO50 TO R97b [A R97b |A TO18 | A MM10) A R110 | A TO18 TO18 TO18 TO18 1% TO18 |O T018 TO18 oD TO18 | @ TO51 TO51 TO18 1D u u46 A u34 a R97a TO18 L2p T0106 X64c |A TO @ TO18 u46 A TO105 |C TO51 TO51 TO51 | A TO51 MT59e 64b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) fab, (2) MAX RISE TIME & RISE DELAY! STORE) FALL /!N FREE MAX. | Cob bb |STRUCTURE|M| MAX. |200 TIME | TIME | TIME | TIME | AIR @ | Vcb le SAT. X ~ |P-PNP A|TEMP| s/a tr td ts tf 25C RES. Cob jN-NPN T T0200 2N3982 250MSA|15n 151 25n 15n 3.0 100 |1! 2.7 8.0p0 Si TOS h n . . A3T2221 250MSA 130nt | 20nt 10 Z\1 : Si u44 2N3981 250MSA 30n 10n , 102 |1 . : Si TO5 2N3131 250M 25n 75nd 10 : : Si TE3903 250M 50n 10 : ; Si FM2846 250MSA 40nd 10 . Si TE4951 250MA ! Si TE4954 250M8A : Si TE5370 250MSA 400nd : Si 96EP 250MSA 100nd , Si FT3642 250MSA 150n% ]3. : Si USAF522ES067M | 250MSA| 60nd 60nd Si USAF523ES078M | 250M5A| 60nd 60nd : Si BFW71 250MA| 100ngt 500nSt 1. Si D32K1 275MSA| 25n 30n ; Si MDS38 280MSA : Ge h . 28C405 300M8 Ge ST04 300M54 : Si ST55 300MEA : : Si nh .! ST63 3OOMSS . : Si 27191 300MSA 26104 300M | 4.0n BSY50 300MSA| 5.0nt 20nB | 30nd . n n 2SC340H 300M 12n_ |2.0n |8.0n A346 300M5A 16n FK3014 300M5A 2N835/51 300M8A 25C488H 300M5A 2N2222B 300MA! 25n 1.8 nh m BSX80 300M8A| 25ngt 275mD 2SA56 300Ms | 28nt | 22nt 150m GME9021 300MA| 30nd 625md ST53 300MSA| 30nt 300m TE3605 300MSA| 35nd 500mm n 2N914A 300MSA; 40nd 1.2 10B705 300M5 40nd SYMBOLS AND CODES 119 D.A.T.A. EXPLAINED IN INTERPRETER 119