MJ4030 - MJ4031 - MJ4032 PNP MJ4033 - MJ4034 - MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. * High DC current Gain - hFE=3500 (Typ) @ IC=10 Adc * Monolithic Construction with Built-in Base Emitter Shunt Resistor The complementary PNP types are the MJ4033/34/35 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ratings Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage IE=0 IB=0 IC=0 Value MJ4030 MJ4033 60 MJ4031 MJ4034 80 MJ4032 MJ4035 100 MJ4030 MJ4033 60 MJ4031 MJ4034 80 MJ4032 MJ4035 100 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 5.0 COMSET SEMICONDUCTORS Unit V V V 1/5 MJ4030 - MJ4031 - MJ4032 PNP MJ4033 - MJ4034 - MJ4035 NPN IC Collector Current IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature @ TC < 25 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 16 A 0.5 A 150 Watts 200 -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 COMSET SEMICONDUCTORS Value Unit 1.17 C/W 2/5 MJ4030 - MJ4031 - MJ4032 PNP MJ4033 - MJ4034 - MJ4035 NPN ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO ICEO V(BR)CEO IEBO Ratings Test Condition(s) MJ4030 MJ4033 60 - - MJ4031 MJ4034 80 - - V MJ4032 MJ4035 100 VCE=30 Vdc, IB=0 MJ4030 MJ4033 - - VCE=40 Vdc, IB=0 MJ4031 MJ4034 - - 3.0 mA VCE=50 Vdc, IB=0 MJ4032 MJ4035 - - MJ4030 MJ4033 60 - - MJ4031 MJ4034 80 - - MJ4032 MJ4035 100 - - MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 - - 5.0 Collector-Emitter Voltage (*) IC=100 mAdc, IB=0 Collector Cutoff Current Collector-Emitter Breakdown Voltage (*) Emitter Cutoff Current Min Typ Mx Unit IB=0 Vdc, IC=100 VBE=5.0 V, IC=0 COMSET SEMICONDUCTORS 3/5 V mA MJ4030 - MJ4031 - MJ4032 PNP MJ4033 - MJ4034 - MJ4035 NPN VCB=60 V, RBE=1.0 k ohm VCB=80 V, RBE=1.0 k ohm VCB=100 V, RBE=1.0 k ohm ICER Collector-Emitter Leakage Current VCB=80 V, RBE=1.0 k ohm, TC=150C VCB=100 V, RBE=1.0 k ohm, TC=150C IC=10 A, IB=40 mAdc Collector-Emitter saturation Voltage (*) IC=16 A, IB=80 mAdc VBE hfe Base-Emitter Voltage (*) DC Current Gain (*) MJ4031 MJ4034 - - - - 1.0 MJ4032 MJ4035 mAdc VCB=60 V, RBE=1.0 k ohm, TC=150C VCE(SAT) MJ4030 MJ4033 IC=10 Adc, VCE=3.0Vdc VCE=10 Vdc, IC=3.0 Adc MJ4030 MJ4033 MJ4031 MJ4034 - - - - 5.0 - - 2.5 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Vdc - - 4.0 - - 3 V 1000 - - - ! ! ! For PNP types current and voltage values are negative ! ! ! (*) Pulse Width 300 s, Duty Cycle 2.0% COMSET SEMICONDUCTORS 4/5 MJ4030 - MJ4031 - MJ4032 PNP MJ4033 - MJ4034 - MJ4035 NPN MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 5/5