BDW83C
BDW84C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
BDW 83C IS A STMicroelec tro nic s
PREFERRED SALESTYPE
COMPLEMENTARY PNP - NPN DEVICES
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
HIGH DC CURRENT GAIN
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a Silicon Epitaxial-Base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
Th e complem entary type is BDW 84C.
®
INT E R NAL SCH E M ATI C DIAG RA M
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 15 A
ICM Collector Peak Current 40 A
IBBase Current 0.5 A
Ptot Total Dissipation at Tc 25 oC130 W
Tstg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
123
TO-218
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-ca se Max 0.96 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 10 0 V
VCB = 10 0 V TC = 150 oC500
5µA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 40 V 1 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)Collector-Emitter
Saturation Voltage IC = 6 A IB = 12 mA
IC = 15 A IB = 150 mA 2.5
4V
VBE(on)Base-Emitter Voltag e IC = 6 A VCE = 3 V 2.5 V
hFEDC Current Ga in IC = 6 A VCE =3 V
IC = 15 A VCE =3 V 750
100 20000
VfDiode Forward Voltage IF = 10 A 4 V
ton
toff
RESISTIVE LOAD
Turn-on Time
Turn-off Time
VCC = 30 V IC = 10 A
RB1 = 300 RB2 = 150
IB1 = - IB2 = 40 mA 0.9
6µs
µs
P ulsed: P ulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negat ive.
BDW83C / BDW84C
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R 12.2 0.480
Ø 4 4.1 0.157 0.161
R
A
C
D
E
H
FG
L6
¯
L3
L2
L5
12 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BDW83C / BDW84C
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties wh ich ma y resul t from i ts use. No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicro electronics. Specif ication mentioned in this publication are
subject to change without notice. This publication supersedes and r eplac es all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
Th e ST log o is a trade mark of STMicroelectronics
© 200 2 STMicroelect r o nics – Printed in It aly – All Rights Reserved
STMicroelectronics GROUP OF C OMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Ho ng Kong - India - Is rael - Italy - Japa n - Malaysia - Malta - Morocco -
Singap ore - Spain - Sweden - Switzerland - Unite d Kingdom - United States.
http://www.st.com
BDW83C / BDW84C
4/4