TO-92MOD Plastic-Encapsulated Transistors
2SA1020 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 900 mW (Tamb=25℃)
Collector current
ICM : -2 A
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown vol tage V(BR)CBO Ic=-100µA, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V
E mitter-b ase break dow n volt age V(BR)EBO IE=-100 µA, IC=0 -5 V
Collector cut-off current ICBO V
CB=-50 V, IE=0
-1 µA
E mitte r cut-off current IEBO V
EB=-5 V, IC=0
-1 µA
DC current gain hFE(1) V
CE=-2 V, IC= -500 A 70 240
Collector-emitter saturation vol tage VCE(sat) I
C=-1A, IB=-50 mA
-0.5 V
Base-emitter satu ration voltage VBE(sat) I
C=-1 A, IB=-50 mA
-1.2 V
Transit ion frequency f T VCE=-2 V, IC=-500 mA 100 MHz
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
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Electronics
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