vem t FAIRCHILD SENECONDUCTOR oe. ay pe Bsyccezy ooazagy g i TRF320- 323/IRF720-723 ie , FAIRCHILD MTP3N35/3N40 T-3 7-4 A Schlumberger Company N-Channel Power MOSFETs, 3.0 A, 350-400 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, 8S such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse ry circuits. G Low Rosjon) 8 e Vas Rated at +20 V Isc0020F Iscootee @ Silicon Gate for Fast Switching Speeds : Ings; Vos(on) Specitied at Elevated Temperature re eves * Rugged ; IRF322 IRE722 @ Low Drive Requirements IRF323 IRF723 @ Ease of Paralleling MTP3N35 MTP3N40 Product Summary Ip at Ip at . Part Number Voss Ros (on To = 25C To = 100C Case Style - (on) . IRF320 400 V 1.8 9 3.0 A 20A TO-204AA i IRF321 350 V 180 3.0 A 20A {RF322 400 V 2.5 Q 25 A i5A IRF323 350 V 2.5 2 25 A 15A IRF720 400 V 1.8 2 3.0 A 200A TO-220AB IRF721 350 V 18 9 3.0 A 20A IRF722 400 V 2.5 Q 25 A 15 A i IRF723 . 350 V 2.5 Q 25A 1.5 A MTP3N35 350 V 3.3 2 3.0 A 20A i MTP3N40 400 V 3.3 QO 3.0 A 20A * Notes r For information concerning connection diagram and package oulline, reter to Section 7. wrom me canarias ei 2-107 neon FAIRCHILD SEMICONDUCTOR au DE i 4469674 00278495 2 i IRF320-323/IRF720-723 ; i MTP3N35/3N40 539), Maximum Ratings Rating Rating IRF320/322 IRF321/323 IRF720/722 IRF721/723 Symbol Characteristic MTP3N40 MTP3N35 Unit Voss Drain to Source Voltage* 400 350 V VocR Drain to Gate Voltage? 400 350 v Regs = 20 k22 Ves Gate to Source Voltage +20 20 Vv Ty, Tsig | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8 From Case for 5 5 Maximum Thermal Characteristics IRF320-323/ : IRF720-723 MTP3N35/3N40 I Resc Thermal Resistance, 3.12 1.67 C/W : Junction to Case Rasa Thermal Resistance, 30/80 80 C/W Junction to Ambient Pp Total Power Dissipation 40 75 Ww . at To = 25C Ibm Pulsed Drain Current? 12 12 A Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage! Vv Vag =0 V, Ip = 250 WA IRF320/322/720/722/ 400 MTP3N40 IRF321/323/721/723/ 350 MTP3N35 Ipss Zero Gate Voltage Drain Current 250 HA Vos = Rated Vpss: Vas = 9 V 1000 pA Vos = 0.8 x Rated Voss, Veg =0 V, To = 126C less Gate-Body Leakage Current nA Veg = +20 V, Vos =0 V IRF320-323 100 IRF720-723/MTP3N35/3N40 +500 2-108 , FAIRCHILD SEMICONDUCTOR au de syece74 onazasn y IRF320-323/IRF720-723 MTP3N35/3N40 T-39-11 Electrical Characteristics (Cont.) (To = 25C unless otherwise noted) Symbol! Characteristic | Min | Max | Unit | Test Conditions On Characteristics Vaseh) Gate Threshold Voltage v IRF320-323/IRF720-723 2.0 40 Ip = 250 wA, Vos = Vas MTP3N35/40 2.0 45 Ip =1 MA, Vos = Vas Rpsven} Static Drain-Source On-Resistance 2 Ves =10 V, Ip=15 A IRF320/321/720/721 18 IRF322/323/722/723 25 . MTP3N35/40 3.3 Vpg(on) | Drain-Source On-Voltage MTP3N35/40 12 V Ves = 10 V; Ip = 3.0 A: 10 V Vag = 10 V; Ip=1.5 A; To = 100C Os Forward Transconductance 1.0 S (@) Vps = 10 V, iIp=1.5 A Dynamic Characteristics 2. Pulse test: Pulse width <80 ys, Duty cycle <1% 8. Switching time measurements performed on LEM TR-58 test equipment. Ciss Input Capacitance 500 pF Vos = 25 V, Veg =0 V Coss Output Capacitance 100 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 40 pF Switching Characteristics (Tc = 200C, Figures 1, 2 tayo) Turn-On Delay Time 40 ns Vop = 200 V, ip=1.5 A Ves = 10 V, Raen = 50 2 t Rise Time 50 ns Res = 50 2 tatott Turn-Off Delay Time 100 ns te Fall Time 50 ns Qg Total Gate Charge 15 nG Ves = 10 V, Dp=40A Vop = 200 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF3820/321/720/721 1.6 v Ig =3.0 A; Vag =0 V IRF322/323/722/723 1.5 Vv Is =2.5 A; Vegg=0 V tr Reverse Recovery Time 450 ns lp =3.0 A; dig/dt = 100 A/xuS Notes 4. Ty = 425C to + 150C 2-109 mens omen $ 1 - re Bn en eee ae ee FAIRCHILD SEMICONDUCTOR IRF320-323/IRF720-723 MTP3N35/3N40 T-39-11 Typical Electrical Characteristics Figure 1 Switching Test Circuit | | . PULSE GENERATOR Typical Performance Curves Figure 3 Output Characteristics Vea = 10 6.0 80y2 PULSE TEST Ip-DRAIN CURRENTA v 5.0 V 0 2 4 6 8 10 VysDRAIN TO SOURCE VOLTAGEV PC1ONSCr Figure 5 Transfer Characteristics tpDRAIN CURRENTA a 4 5 6 7 8 9 Vgs~-GATE TO SOURCE VOLTAGEV PCLT cRnaa50F Figure 2 OUTPUT, Vout INVERTED INPUT, Vin Figure 4 Switching Waveforms NO PULSE WIDTH. Static Drain to Source Resistance vs Drain Current Vos = 10 Fosjeny-STATIC DRAIN TO SOURCE RESISTANCEQ. Figure 6 2 rd s 2 = = o o ~ i a NOAMALIZED GATE THRESHOLD VOLTAGE 2 N ~50 T, JUNCTION TEMPERATURE"C pCoSeMLE: T= 128C 1 2 a 4 8 6 bbDRAIN CURRENTA PCIMEOF Temperature Variation of Gate to Source Threshold Voltage o 50 100 150 2-110 FAIRCHILD SEMICONDUCTOR ay DEP syb4b74 0027898 a I. IRF320-323/IRF720-723 MTP3N35/3N40 T-39-11 { Typical Performance Curves (Cont) Figure 7 Capacitance vs Drain to Source Voitage 103 C~-CAPACITANCEpF 3 10" 10* a 5 10" . 102 VosDAAIN TO SOURCE VOLTAGE--V Figure 9 Forward Biased Safe Operating Area for IRF320-323 and IRF720-723 8 lpDRAIN CURRENTA 3 REGION MAY BE 2 10-* 10 2 4 10 z 192 Vos~DRAIN TO SOURCE VOLTAGEV Figure 11 Forward Biased Safe Operating Area for MTP3N35/3N40 102 1N MAY BE LIMITED BY ib 10 & my c ce = 3 Zz e oa 10 { 2 fo-1 108 402 103 VosORAIN TO SOURCE VOLTAGEV PCIGSI1F Figure 8 Gate to Source Voltage vs Total Gate Charge B a 3 Vos-GATE TO SOURCE VOLTAGEV - 0 4 8 12 1% 20 2 Q,TOTAL GATE CHARGEnC Figure 10 Transient Thermal Resistance vs Time for IRF320-323 and IRF720-723 a z wu 2 z= BS Zz 108 Pa gi <2 ea, 474 {= i ey if buty Pater, 0 = Deurves te treaty a ot nenting blues Vaan = Te + Pu X Zoe 107! 1-1 * 198 * 10" 4108 4 103 416 t-TIMEms POISE Figure 12 Transient Thermal Resistance vs Time for MTP3N35/3N40 al 7 = gg a5 Ry bw a Pa Zo ca ve aye j 2 bury Fector, Ds curves spply to train of heating pulses Toman = Te + Pa Zoe 10-1 4 104 4 10 4 102 4 103 tTIMEms PoORESIF 2-111