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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
DISCRETE SEMICONDUCTORS
BSR13; BSR14
NPN switching transistors
2004 Jan 13 2
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
FEATURES
•High current (max. 800 mA)
•Low voltage (max. 40 V).
APPLICATIONS
•Switching and linear applications.
DESCRIPTION
NPN switching tran sistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR1 6.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BSR13 U7*
BSR14 U8*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BSR13 −plastic surface mounted pa ck age; 3 leads SOT23
BSR14
2004 Jan 13 3
NXP Semiconductors Pr oduct data shee t
NPN switching transistors BSR13; BSR14
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BSR13 −60 V
BSR14 −75 V
VCEO collector-emitter voltage open base
BSR13 −30 V
BSR14 −40 V
VEBO emitter-base voltage open collector
BSR13 −5 V
BSR14 −6 V
ICcollector current (DC) −800 mA
ICM peak collector current −800 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
BSR13 IE = 0; VCB = 50 V −30 nA
IE = 0; VCB = 50 V; Tj = 150 °C−10 µA
collector cut-off current
BSR14 IE = 0; VCB = 60 V −10 nA
IE = 0; VCB = 60 V; Tj = 150 °C−10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V
BSR13 −30 nA
BSR14 −10 nA
2004 Jan 13 4
NXP Semiconductors Pr oduct data shee t
NPN switching transistors BSR13; BSR14
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
hFE DC current gain IC = 0.1 mA; VCE = 10 V; note 1 35 −
IC = 1 mA; VCE = 10 V; note 1 50 −
IC = 10 mA; VCE = 10 V; note 1 75 −
IC = 150 mA; VCE = 10 V; note 1 100 300
IC = 150 mA; VCE = 1 V; note 1 50 −
DC current gain IC = 500 mA; VCE = 10 V; note 1
BSR13 30 −
BSR14 40 −
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA
BSR13 −400 mV
BSR14 −300 mV
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA
BSR13 −1 .6 V
BSR14 −1 V
VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA
BSR13 −1 .3 V
BSR14 0.6 1.2 V
base-emi tter satura tion voltage IC = 500 mA; IB = 50 mA
BSR13 −2 .6 V
BSR14 −2 V
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz −8pF
fTtransition freque ncy IC = 20 mA; VCE = 20 V;
f = 100 MHz
BSR13 250 −MHz
BSR14 300 −MHz
Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA −35 ns
tddelay time −15 ns
trrise time −20 ns
toff turn-off time −250 ns
tsstorage time −200 ns
tffall time −60 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
2004 Jan 13 5
NXP Semiconductors Pr oduct data shee t
NPN switching transistors BSR13; BSR14
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = ≥ 100 Ω.
Fig.2 Test circuit for switching times.
2004 Jan 13 6
NXP Semiconductors Pr oduct data shee t
NPN switching transistors BSR13; BSR14
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 13 7
NXP Semiconductors Pr oduct data shee t
NPN switching transistors BSR13; BSR14
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document co ntains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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consequenc es of use of such information.
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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described herein may be subject to export control
regulations. Export might require a prior authorization from
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12419
