BSC220N20NSFD MOSFET OptiMOSTM3Power-Transistor,200V TSON-8-3 8 7 Features 5 6 6 5 *N-channel,normallevel *175Crated *ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 *Idealforhigh-frequencyswitchingandsynchronousrectification ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters 7 8 Pin 1 2 4 3 3 4 2 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 200 V G4 5D RDS(on),max 22 m ID 52 A Type/OrderingCode Package Marking RelatedLinks BSC220N20NSFD TSON-8-3 220N20F - Final Data Sheet 1 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD 1Maximumratings atTA=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 52 41 A TC=25C TC=100C - 208 A TC=25C - - 214 mJ ID=38A,RGS=25 dv/dt - - 60 kV/s ID=52A,VDS=100V, di/dt=1500A/s,Tj,max=175C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 214 W TC=25C Operating and storage temperature Tj,Tstg -55 - 175 C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 2Thermalcharacteristics Tj=25 C, unless otherwise specified Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.4 0.7 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 50 K/W - 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=137A - 0.1 10 1 100 A VDS=160V,VGS=0V,Tj=25C VDS=160V,VGS=0V,Tj=125C IGSS - 1 100 nA VGS=20V,VDS=0V RDS(on) - 17.7 22 m VGS=10V,ID=52A Gate resistance RG - 3.7 5.5 - Transconductance gfs 44 88 - S |VDS|>2|ID|RDS(on)max,ID=52A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 200 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2770 3680 pF VGS=0V,VDS=100V,f=1MHz Coss - 210 279 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance Crss - 5.7 10 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 7 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6 Rise time tr - 7 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6 Turn-off delay time td(off) - 28 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6 Fall time tf - 10 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6 Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 13.1 - nC VDD=100V,ID=52A,VGS=0to10V Gate to drain charge Qgd - 4.4 7 nC VDD=100V,ID=52A,VGS=0to10V Switching charge Qsw - 9.2 - nC VDD=100V,ID=52A,VGS=0to10V Gate charge total Qg - 34 43 nC VDD=100V,ID=52A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=52A,VGS=0to10V Output charge1) Qoss - 84 111 nC VDD=100V,VGS=0V Gate to source charge 1) 1) 1) 2) Defined by design. Not subject to production test. See Gate charge waveforms for parameter definition Final Data Sheet 4 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD Table7Reversediode Parameter Symbol Values Unit Note/TestCondition 52 A TC=25C - 208 A TC=25C - - 52 A TC=25C,diF/dt=1500A/s VSD - 1.0 1.2 V VGS=0V,IF=52A,Tj=25C Reverse recovery time3) trr - 89 - ns VR=100V,IF=12.5A, diF/dt=100A/s Reverse recovery charge3) Qrr - 195 - nC VR=100V,IF=12.5A, diF/dt=100A/s Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode hard commutation current2) IS,hard Diode forward voltage Diode continous forward current 1) 1) Diode pulse current is defined by thermal and/or package limits Maximum allowed hard-commutated current through diode at di/dt=1500 A/s 3) Defined by design. Not subject to production test. 2) Final Data Sheet 5 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 250 60 50 200 40 ID[A] Ptot[W] 150 30 100 20 50 0 10 0 50 100 150 0 200 0 50 100 TC[C] 150 200 TC[C] Ptot=f(TC) ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 s 10 s 102 100 s 100 101 ZthJC[K/W] ID[A] 1 ms 10 ms 0.5 0.2 DC 10-1 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 60 10 V 7V 50 50 40 5V 30 RDS(on)[m] ID[A] 40 4.5 V 20 4.5 V 30 5V 7V 20 10 V 10 0 10 0 1 2 3 4 0 5 0 10 20 30 VDS[V] 40 50 60 70 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 80 110 100 70 90 60 80 70 gfs[S] ID[A] 50 40 30 60 50 40 20 30 175 C 20 10 10 25 C 0 0 2 4 6 8 0 0 VGS[V] 50 75 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25C 7 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 120 4.0 3.5 100 1370 A 3.0 80 137 A VGS(th)[V] RDS(on)[m] 2.5 60 2.0 1.5 40 98% 1.0 typ 20 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=55A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 C 175 C 25C, 98% 175C, 98% Ciss 103 102 IF[A] C[pF] Coss 102 101 101 Crss 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 160 V 25 C 100 V 40 V VGS[V] IAS[A] 6 101 4 100 C 2 150 C 100 100 101 102 103 tAV[s] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=55Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 230 220 VBR(DSS)[V] 210 200 190 180 -60 -20 20 60 100 140 180 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2018-03-14 OptiMOSTM3Power-Transistor,200V BSC220N20NSFD RevisionHistory BSC220N20NSFD Revision:2018-03-14,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-03-14 Release of final version TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2018-03-14