1
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
Pin 1
2
3
4
5
6
7
8
4
32
1
5
678
TSON-8-3
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTM3Power-Transistor,200V
Features
•N-channel,normallevel
•175°Crated
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Idealforhigh-frequencyswitchingandsynchronousrectification
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 200 V
RDS(on),max 22 mΩ
ID52 A
Type/OrderingCode Package Marking RelatedLinks
BSC220N20NSFD TSON-8-3 220N20F -
2
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
52
41 ATC=25°C
TC=100°C
Pulsed drain current1) ID,pulse - - 208 A TC=25°C
Avalanche energy, single pulse EAS - - 214 mJ ID=38A,RGS=25Ω
Reversediodepeakdv/dtdv/dt- - 60 kV/µs ID=52A,VDS=100V,
di/dt=1500A/µs,Tj,max=175°C
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 214 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Tj=25 °C, unless otherwise specified
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.4 0.7 K/W -
Thermal resistance, junction - ambient,
minimal footprint RthJA - - 75 K/W -
Thermal resistance, junction - ambient,
6 cm2 cooling area2) RthJA - - 50 K/W -
1) See Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=137µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=160V,VGS=0V,Tj=25°C
VDS=160V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 17.7 22 mΩVGS=10V,ID=52A
Gate resistance1) RG- 3.7 5.5 Ω-
Transconductance gfs 44 88 - S |VDS|>2|ID|RDS(on)max,ID=52A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2770 3680 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance1) Coss - 210 279 pF VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance1) Crss - 5.7 10 pF VGS=0V,VDS=100V,f=1MHz
Turn-on delay time td(on) - 7 - ns VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Rise time tr- 7 - ns VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 28 - ns VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Fall time tf- 10 - ns VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 13.1 - nC VDD=100V,ID=52A,VGS=0to10V
Gate to drain charge1) Qgd - 4.4 7 nC VDD=100V,ID=52A,VGS=0to10V
Switching charge Qsw - 9.2 - nC VDD=100V,ID=52A,VGS=0to10V
Gate charge total1) Qg- 34 43 nC VDD=100V,ID=52A,VGS=0to10V
Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=52A,VGS=0to10V
Output charge1) Qoss - 84 111 nC VDD=100V,VGS=0V
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
5
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS- - 52 A TC=25°C
Diode pulse current1) IS,pulse - - 208 A TC=25°C
Diode hard commutation current2) IS,hard - - 52 A TC=25°C,diF/dt=1500A/µs
Diode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=52A,Tj=25°C
Reverse recovery time3) trr - 89 - ns VR=100V,IF=12.5A,
diF/dt=100A/µs
Reverse recovery charge3) Qrr - 195 - nC VR=100V,IF=12.5A,
diF/dt=100A/µs
1) Diode pulse current is defined by thermal and/or package limits
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
3) Defined by design. Not subject to production test.
6
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 50 100 150 200
0
50
100
150
200
250
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 50 100 150 200
0
10
20
30
40
50
60
ID=f(TC);VGS>=10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102103
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
7
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
012345
0
10
20
30
40
50
60
5 V
7 V
10 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 10 20 30 40 50 60 70
0
10
20
30
40
50
60
4.5 V
5 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
10
20
30
40
50
60
70
80
175 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 25 50 75
0
10
20
30
40
50
60
70
80
90
100
110
gfs=f(ID);Tj=25°C
8
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
20
40
60
80
100
120
98%
typ
RDS(on)=f(Tj);ID=55A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1370 µA
137 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 40 80 120 160
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
175 °C
25°C, 98%
175°C, 98%
IF=f(VSD);parameter:Tj
9
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS[A]
100101102103
100
101
102
25 °C
100 °C
150 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40
0
2
4
6
8
10
160 V
100 V
40 V
VGS=f(Qgate);ID=55Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
180
190
200
210
220
230
VBR(DSS)=f(Tj);ID=1mA
Diagram Gate charge waveforms
10
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
5PackageOutlines
E2
E3
K2
e
MILLIMETERS
A
b1
c
D
D1
E
E1
L
- 1.10
-
4.90
4.25
5.90
4.00
0.60
0.05
0.20
5.10
4.45
6.10
4.20
0.80
(0.37)
1.27
b 0.34 0.54
0.20 0.40
3.14 3.34
L1 0.43 0.63
Z8B00187559
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
14.12.2017
DOCUMENT NO.
DIMENSION MIN. MAX.
SCALE
0 2mm
10:1
1
L2 (0.25)
Figure1OutlineTSON-8-3,dimensionsinmm/inches
11
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Rev.2.0,2018-03-14Final Data Sheet
RevisionHistory
BSC220N20NSFD
Revision:2018-03-14,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2018-03-14 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2018InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.