A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCES IC = 50 mA 40 V
BVCBO IC = 50 mA 40 V
BVCEO IC = 50 mA 20 V
BVEBO IE = 1.0 mA 4.0 V
ICES VCE = 12.5 V 5.0 mA
hFE IC = 1.0 A VCE = 5.0 V 10 35 ---
Cob VCB = 12.5 V f = 1.0 MHz 200 pF
Pout VCE = 12.5 V f = 30 MHz 20 W(PEP)
GPE
η
ηη
η
IMD
VCC = 12.5 V IC ≤ 1.75 A Pout = 20 W (PEP)
Icq = 25 mA f = 30, 30.001 MHz 12
45
-30
dB
%
dB
ψ
ψψ
ψVCC = 12.5 V IC ≤ 1.75 A Pout = 20 W (PEP)
Icq = 25 mA f = 30, 30.001 MHz >30:1 ALL PHASE ANGLES
NPN SILICON RF POWER TRANSISTOR
MRF406
DESCRIPTION:
The MRF406 is Designed for
12.5 V 30 MHz Power Amplif ier
Applications.
FEATURES INCLUDE:
• Common Emitter
• Output Power = 20 W (PEP)
MAXIMUM RATINGS
IC4.0 A
VCE 20 V
VCB 40 V
PDISS 80 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 2.2 OC/W
PACKAGE STYLE .380" 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
C
B
E
E
