V F @ I F
TYPES VdC mA
MIN MAX (PULSED)
1N6639US – 1.20 500
0.54 0.62 1
1N6640US 0.76 0.86 50
0.82 0.92 100
0.87 1.00 200
1N6641US – 1.10 200
159
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600 FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
V BRR V RWM I R1 I R2 T FR T RR CT
TYPES @ 10 µA @ TA= +25°C @ TA= +150°C IFI R = 10 mA VR= 0
VR=V
R== 200 mA I F = 10 mA
V RWM V RWM RL= 100
V(pk) V(pk) nA dc µA dc ns ns pF
1N6639US 100 75 100 100 10 4.0 2.5
1N6640US 75 50 100 100 10 4.0 2.5
1N6641US 75 50 100 100 10 5.0 3.0
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM
= 2.5A, Pw= 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.
FORWARD VOLTAGE:
• 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/609
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6639US
1N6640US
1N6641US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/609
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
°C/W maximum
POLARITY: Cathode end is banded
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D1.78 2.16 0.070 0.085
F0.48 0.71 0.019 0.028
G4.19 4.95 0.165 0.195
S0.08MIN. 0.003MIN.
FIGURE 1
160
IN6639US thru IN6641US
.2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
IF- Forward Current - (mA)
1000
100
10
1
0.1
150ºC
100ºC
25ºC
-65ºC
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
IR- Reverse Current - (µA)
1000
100
10
1
0.1
.01
.001
150ºC
100ºC
25ºC
-65ºC
NOTE : All temperatures shown on graphs are
junction temperatures
