© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1G,
NSVBC114EPDXV6T1G Series
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Available in 8 mm, 7 inch Tape and Reel
•AEC−Q101 Qualified and PPAP Capable
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)(2)(3)
(4) (5) (6)
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SOT−563
CASE 463A
PLASTIC
xx = Specific Device Code
(see table on page 2)
M = Date Code
G=Pb−Free Package
MARKING DIAGRAM
xx MG
G
Device Package Shipping†
ORDERING INFORMATION
NSBC114EPDXV6T1G SOT−563 4 mm pitch
4000/Tape & Reel
NSBC114EPDXV6T5G SOT−563 2 mm pitch
8000/Tape & Reel
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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2
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD357
2.9
mW
mW/°C
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA 350
°C/W
Characteristic (Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD500
4.0
mW
mW/°C
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA 250
°C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (kW)R2 (kW)
NSBC114EPDXV6T1G SOT−563 11 10 10
NSBC124EPDXV6T1G SOT−563 12 22 22
NSBC144EPDXV6T1G SOT−563 13 47 47
NSVB144EPDXV6T1G SOT−563 13 47 47
NSBC114YPDXV6T1G SOT−563 14 10 47
NSVBC114YDXV6T1G SOT−563 14 10 47
NSBC114TPDXV6T1G (Note 2) SOT−563 15 10 ∞
NSBC143TPDXV6T1G (Note 2) SOT−563 16 4.7 ∞
NSVB143TPDXV6T1G (Note 2) SOT−563 16 4.7 ∞
NSBC113EPDXV6T1G (Note 2) SOT−563 30 1.0 1.0
NSBC123EPDXV6T1G (Note 2) SOT−563 31 2.2 2.2
NSBC143EPDXV6T1G (Note 2) SOT−563 32 4.7 4.7
NSBC143ZPDXV6T1G (Note 2) SOT−563 33 4.7 47
NSVB143ZPDXV6T1G (Note 2) SOT−563 33 4.7 47
NSBC124XPDXV6T1G (Note 2) SOT−563 34 22 47
NSVB124XPDXV6T1G (Note 2) SOT−563 34 22 47
NSBC123JPDXV6T1G (Note 2) SOT−563 35 2.2 47
NSVB123JPDXV6T1G (Note 2) SOT−563 35 2.2 47
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
(IC = 10 mA, IB = 5 mA)
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
(IC = 10 mA, IB = 1 mA)
NSBC114TPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
NSBC113EPDXV6T1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
NSBC114TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k W
Resistor Ratio
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G, NSVB144EPDXV6T1G
NSBC114YPDXV6T1G, NSVBC114YDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G, NSVB143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G, NSVB143ZPDXV6T1G
NSBC124XPDXV6T1G, NSVB124XPDXV6T1G
NSBC123JPDXV6T1G, NSVB123JPDXV6T1G
R1/R2
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
0.047
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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5
Figure 1. Derating Curve
300
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 490°C/W
250
PD, POWER DISSIPATION (mW)
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 020 40 50
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (VOLTS)
56 78 910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input
Voltage
Figure 11. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLT
S
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus ICFigure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 16. Input Voltage versus Output
Current
0.001
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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9
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus ICFigure 18. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 19. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 20. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 21. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1, NSVB144EPDXV6T1
NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 22. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 23. DC Current Gain
Figure 24. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 25. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 26. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1, NSVB144EPDXV6T1
PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 27. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 28. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456 789
Figure 31. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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12
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1, NSVBC114YPDXV6T1
NPN TRANSISTOR
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
002468101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 32. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 33. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 0.2 V TA=-25°C
75°C
VO = 5 V
25°C
75°C
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1, NSVBC114YPDXV6T1
PNP TRANSISTOR
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 1520 2530 3540 4550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 38. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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14
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
Figure 42. DC Current Gain − PNP
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
Figure 43. DC Current Gain − NPN
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1, NSVB143TPDXV6T1
Figure 44. DC Current Gain − PNP
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
Figure 45. DC Current Gain − NPN
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TA = 25°C
VCE = 5.0 V
VCE = 10 V
NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
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15
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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