MMBT2222 / MMBT2222A
Min. Typ. Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA MMBT2222
MMBT2222A
VCEsat
VCEsat
–
–
–
–
0.4 V
0.3 V
IC = 500 mA, IB = 50 mA MMBT2222
MMBT2222A
VCEsat
VCEsat
–
–
–
–
1.6 V
1.0 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA MMBT2222
MMBT2222A
VBEsat
VBEsat
–
0.65 V
–
–
1.3 V
1.2 V
IC = 500 mA, IB = 50 mA MMBT2222
MMBT2222A
VBEsat
VBEsat
–
–
–
–
2.6 V
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 50 V, (E open)
VCB = 60 V, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
–
–
–
–
10 nA
10 nA
VCB = 50 V, Tj = 125°C, (E open)
VCB = 60 V, Tj = 125°C, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
–
–
–
–
10 µA
10 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 3 V, (C open) MMBT2222A IEB0 – –- 100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz fT250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO ––8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 25 pf
Noise figure – Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 150 mA, IB1 = 15mA
td– – 10 ns
tr– – 25 ns
storage time
fall time
VCC = 3 V, IC = 150 mA,
IB1 = IB2 = 15 mA
ts– – 225 ns
tf– – 60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren MMBT2709 / MMBT2709A
Marking - Stempelung MMBT2222 = 1B
MMBT2222A = M1P
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG