RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
BCW61C
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Collector current-continuous
Total device dissipation
Junction and storage temperature
CHARACTERISTICS SYMBOL UNITS
oC
A
W
V
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Marking
VCBO
VCEO
VEBO
PC
TJ ,Tstg
IC
-32
-32
-5
0.25
-55 - 150
VALUE
BC
0.055(1.40)
0.047(1.20)
-0.1
BASE
EMITTER
COLLECTOR
*Power dissipation
PCM : 0.25 W (Tamb =25OC)
1
1
2
3
2
3
DC current gain (VCE= -5V, IC= -10mA)
DC current gain (VCE= -5V, IC= -2mA)
DC current gain (VCE= -1V, IC= -50mA)
Collector cut-off current (VCB= -32V, IE=0)
Collector cut-off current (VEB= -4V, IE=0)
Transition frequency (VCE= -5V, IC= -10mA, f=100MHZ)
Collector capacitance (VCB= -10V, IE= 0, f=1MHZ)
Emitter capacitance (VEB= -0.5V, IC= 0, f=1MHZ)
Collector-emitter saturation voltage (IC= -10mA, IB= -0.25mA)
Collector-emitter saturation voltage (IC= -50mA, IB= -1.25mA)
Base-emitter saturation voltage (IC= -10mA, IB= -0.25mA)
Base-emitter saturation voltage (IC= -50mA, IB= -1.25mA)
Base-emitter voltage (VCE= -5V, IC= -10mA)
Base-emitter voltage (VCE= -5V, IC= -2mA)
Base-emitter voltage (VCE= -1V, IC= -50mA)
CHARACTERISTICS SYMBOL UNITS
-
-
-
-
-
-
-0.02
-
460
mA
mA
V
V
V
V
V
V
V
V
V
V
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -1mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE
ICBO
VCE(sat)
VBE(sat)
VBE(ON)
fT
Cc
Ce
MAX
-32
-32
-5
-
250
-0.25
-0.85
-
-0.55
-1.05
-0.75
-
-
pF
pF
MHZ
-
-
100
-0.06
40
MIN
- -0.02
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-0.12
-0.6
-0.68
-0.6
100
11
4.5
-0.72
-0.55
-
-
-
-
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
RECTRON
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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