THERMAL DATA
Rthj-amb
Rthj-case Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max 83.4
8.34
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = -40 V
VCB = -40 V TCASE = 125oC-100
-100 nA
µA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = -8 V -100 nA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = -10 mA -25 V
VCE(sat)∗Collector-Emitter
Sustaining Voltage IC = -0.5 A IB = -50 mA
IC = -2 A IB = -0.2 A
IC = -5 A IB = -1 A
-0.3
-0.75
-1.8
V
V
V
VBE(sat)∗Base-Emitter on
Voltage IC = -5 A IB = -1 A -2.5 V
VBE∗Base-Emitter on
Voltage IC =- 2 A VCE = -1 V -1.6 V
hFE∗DC Current Gain IC = -0.5 A VCE = -1 V
IC = -2 A VCE = -1 V
IC = -5 A VCE = -2 V
70
45
10 180
fTTransistor Frequency I C = 0.1 A VCE = 10 V
f = 10 MHz 65 MHz
CCBO Collector-base
Capacitance VCB = -10 V IE = 0 f = 0.1 MHz 120 pF
∗ P ulsed: P ulse duration = 300µs, duty cyc le ≤ 1.5%
MJE210
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