G
S
D
NTE2379
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO220 Type package
Features:
DDynamic dv/dt Rating
DRepetitive Avalanche Rated
DFast Switching
DEase of Paralleling
DSimple Drive Requirements
Absolute Maximum Ratings:
Gate−Source Voltage, VGS +20V.........................................................
Drain Current, ID
Continuous (VGS = 10V)
TC = +255C 6.2A..............................................................
TC = +1005C 3.9A.............................................................
Pulsed (Note 1) 25A..............................................................
Gate Current (Pulsed), IGM +1.5A........................................................
Single Pulsed Avalanche Energy (Note 2), EAS 570mJ......................................
Avalanche Current (Note 1), IAR 6.2A.....................................................
Repetitive Avalanche Energy (Note 1), EAR 13mJ..........................................
Peak Diode Recovery dv/dt (Note 3), dv/dt 3V/ns...........................................
Total Power Dissipation (TC = +255C), PD125W...........................................
Derate Above 255C 1.0W/5C.......................................................
Operating Junction Temperature Range, TJ−555 to +1505C..................................
Storage Temperature Range, Tstg −555 to +1505C..........................................
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL+3005C............
Thermal Resistance:
Maximum Junction−to−Case, RthJC 1.05C/W.........................................
Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS 0.55C/W......
Maximum Junction−to−Ambient (Free Air Operation), RthJA 625C/W....................
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +255C, l = 27mH, RG = 25+, IAS = 6.2A.
Note 3. ISD 3 6.2A, di/dt 3 80A/.A, VDD 3 V(BR)DSS, TJ 3 +1505C.
Rev. 10−13
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 250.A 600 − − V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250.A 2.0 −4.0 V
Gate−Source Leakage Forward IGSS VGS = 20V − − 100 nA
Gate−Source Leakage Reverse IGSS VGS = −20V − − −100 nA
Drain−Source Leakage Current IDSS VDS = 600V, VGS = 0 − − 100 .A
VDS = 480V, VGS = 0, TC = +1505C− − 500 .A
Static Drain−Source ON Resist-
ance
RDS(on) VGS = 10V, ID = 3.7A, Note 4 − − 1.2 +
Forward Transconductance gfs VDS . 100V, ID = 3.7A, Note 4 4.7 − − mhos
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz −1300 −pF
Output Capacitance Coss −160 −pF
Reverse Transfer Capacitance Crss −30 −pF
Turn−On Delay Time td(on) VDD = 300V, ID = 6.2A, RG = 9.1+,
RD = 47+, Note 4
−32 −ns
Rise Time tr−18 −ns
Turn−Off Delay Time td(off) −55 −ns
Fall Time tf−20 −ns
Total Gate Charge QgVGS = 10V, ID = 6.2A, VDS = 360V − − 60 nC
Gate−Source Charge Qgs − − 8.3 nC
Gate−Drain (“Miller”) Charge Qgd − − 30 nC
Internal Drain Inductance LDBetween lead, 6mm (.250 in) from package
and center of die contact
−4.5 −nH
Internal Source Inductance LS−7.5 −nH
Source−Drain Diode Ratings and Characteristics
Continuous Source Current IS(Body Diode) − − 6.2 A
Pulse Source Current ISM (Body Diode) Note 1 − − 25 A
Diode Forward Voltage VSD TJ = +255C, IS = 6.2A, VGS = 0V, Note 4 − − 1.5 V
Reverse Recovery Time trr TJ = +255C, IF = 6.2A, di/dt = 100A/.s,
Note 4
−450 940 ns
Reverse Recovery Charge Qrr −3.8 7.9 .C
Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
