PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX750 ZTX751 UNIT
Collector-Base Voltage VCBO -60 -80 V
Collector-Emitter Voltage VCEO -45 -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-2 A
Power Dissipation: at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX750 ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V(BR)CBO -60 -80 V IC
=-100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO -45 -60 V IC
=-10mA
Emitter-Base
Breakdown
Voltage
V(BR)EBO -5 -5 V IE=-100µA
Collector Cut-Off
Current
ICBO -0.1
-10
-0.1
-10
µA
µA
µA
µA
VCB=-45V
VCB=-60V
VCB=-45V,T
amb
=100°C
VCB=-60V,T
amb
=100°C
Emitter Cut-Off
Current
IEBO -0.1 -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
V
IC
=-1A, IB
=-100mA
IC
=-2A, IB
=-200mA
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.25 -0.9 -1.25 V IC
=-1A, IB
=-100mA
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX750 ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
fT100 140 100 140 MHz IC
=-100mA, VCE
=-5V
f=100MHz
Switching Times ton 40 40 ns IC
=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 450 ns
Output
Capacitance
Cobo 30 30 pF VCB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-258
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX750 ZTX751 UNIT
Collector-Base Voltage VCBO -60 -80 V
Collector-Emitter Voltage VCEO -45 -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-2 A
Power Dissipation: at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX750 ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V(BR)CBO -60 -80 V IC
=-100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO -45 -60 V IC
=-10mA
Emitter-Base
Breakdown
Voltage
V(BR)EBO -5 -5 V IE=-100µA
Collector Cut-Off
Current
ICBO -0.1
-10
-0.1
-10
µA
µA
µA
µA
VCB=-45V
VCB=-60V
VCB=-45V,T
amb
=100°C
VCB=-60V,T
amb
=100°C
Emitter Cut-Off
Current
IEBO -0.1 -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
V
IC
=-1A, IB
=-100mA
IC
=-2A, IB
=-200mA
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.25 -0.9 -1.25 V IC
=-1A, IB
=-100mA
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX750 ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
fT100 140 100 140 MHz IC
=-100mA, VCE
=-5V
f=100MHz
Switching Times ton 40 40 ns IC
=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 450 ns
Output
Capacitance
Cobo 30 30 pF VCB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-258
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
0.01 0.1 101
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
IC/IB=10
IC - Collector Current (Amps)
hFE v IC
h
FE
- Gain
0.01 0.1 1
VCE=2V
125
175
225
75
0
IC - Collector Current (Amps)
VBE(sat) v IC
V
BE(sat)
- (Volts)
0.6
0.8
1.0
1.2
1.4
0.01 100.1 1
0.0001 0.001
IC/IB=10
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
0.6
0.8
1.0
1.2
0.4 0.01 100.1 1
0.0001 0.001
VCE=2V
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
IB1=IB2=IC/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
1 10 100
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
ZTX750
ZTX751
0.1
ZTX750
ZTX751
3-259
