ZTX750 ZTX751 ISSUE 2 JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff Output Capacitance ZTX750 MIN. TYP. 100 ZTX751 MAX. MIN. TYP. 140 100 MAX. UNIT CONDITIONS. 140 MHz IC=-100mA, VCE=-5V f=100MHz 40 40 ns 450 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 30 Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT 175 116 70 C/W C/W C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B PARAMETER SYMBOL 2.0 C 1.5 Am 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 0.001 0.01 0.1 1 10 UNIT V Collector-Base Voltage VCBO -60 -80 VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation: at Tamb=25C derate above 25C Ptot 1 5.7 W mW/C Operating and Storage Temperature Range Tj:Tstg -55 to +200 C V ZTX750 ZTX751 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO -60 -80 V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -45 -60 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100A Collector Cut-Off Current ICBO -10 A A A A VCB=-45V VCB=-60V VCB=-45V,Tamb=100C -0.1 -0.1 A VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.15 -0.3 -0.28 -0.5 -0.15 -0.3 -0.28 -0.5 V V IC=-1A, IB=-100mA IC=-2A, IB=-200mA Base-Emitter VBE(sat) Saturation Voltage -0.9 -0.9 -1.25 V IC=-1A, IB=-100mA MIN. TYP. MAX. MIN. TYP. -0.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current -10 IEBO -1.25 3-257 MAX. -0.1 100 T -Temperature (C) 3-258 ZTX751 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX750 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 200 Thermal Resistance (C/W) Max Power Dissipation - (Watts) 2.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 1.0 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS UNIT CONDITIONS. VCB=-60V,Tamb=100C ZTX750 ZTX751 ISSUE 2 JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff Output Capacitance ZTX750 MIN. TYP. 100 ZTX751 MAX. MIN. TYP. 140 100 MAX. UNIT CONDITIONS. 140 MHz IC=-100mA, VCE=-5V f=100MHz 40 40 ns 450 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 30 Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT 175 116 70 C/W C/W C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B PARAMETER SYMBOL 2.0 C 1.5 Am 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 0.001 0.01 0.1 1 10 UNIT V Collector-Base Voltage VCBO -60 -80 VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation: at Tamb=25C derate above 25C Ptot 1 5.7 W mW/C Operating and Storage Temperature Range Tj:Tstg -55 to +200 C V ZTX750 ZTX751 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO -60 -80 V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -45 -60 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100A Collector Cut-Off Current ICBO -10 A A A A VCB=-45V VCB=-60V VCB=-45V,Tamb=100C -0.1 -0.1 A VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.15 -0.3 -0.28 -0.5 -0.15 -0.3 -0.28 -0.5 V V IC=-1A, IB=-100mA IC=-2A, IB=-200mA Base-Emitter VBE(sat) Saturation Voltage -0.9 -0.9 -1.25 V IC=-1A, IB=-100mA MIN. TYP. MAX. MIN. TYP. -0.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current -10 IEBO -1.25 3-257 MAX. -0.1 100 T -Temperature (C) 3-258 ZTX751 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX750 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 200 Thermal Resistance (C/W) Max Power Dissipation - (Watts) 2.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 1.0 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS UNIT CONDITIONS. VCB=-60V,Tamb=100C ZTX750 ZTX751 TYPICAL CHARACTERISTICS 0.6 td tr tf ns 140 0.4 IC/IB=10 Switching time VCE(sat) - (Volts) 0.5 0.3 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 10 IB1=IB2=IC/10 ts ns 700 120 600 100 500 80 400 60 300 40 200 20 100 0 0 ts td tf tr 0.1 IC - Collector Current (Amps) 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 1.2 VBE(sat) - (Volts) hFE - Gain 225 175 VCE=2V 125 75 1.0 IC/IB=10 0.8 0.6 0 0.01 0.1 1 10 0.0001 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.2 1.0 VCE=2V 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 Single Pulse Test at Tamb=25C 10 VBE - (Volts) 0.001 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 100s ZTX750 ZTX751 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-259 100