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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF27P06 P-Channel QFET(R) MOSFET -60 V, -17 A, 26 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor(R)'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * -17 A, -60 V, RDS(on)=26 m(Max.) @VGS=-10 V, ID=-8.5 A * Low Gate Charge (Typ. 33 nC) * Low Crss (Typ. 120 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating S ! G! TO-220F GD S ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed (Note 1) FQPF27P06 -60 Unit V -17 A -12 A -68 A 25 V (Note 2) 560 mJ Avalanche Current (Note 1) -17 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 4.7 -7.0 47 0.31 -55 to +175 mJ V/ns W W/C C 300 C (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 Typ -- Max 3.19 Unit C/W -- 62.5 C/W www.fairchildsemi.com FQPF27P06 P-Channel MOSFET March 2013 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -60 -- -- V -- -0.06 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS IGSSF IGSSR VDS = -60 V, VGS = 0 V -- -- -1 A VDS = -48 V, TC = 150C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -8.5 A -- 0.055 0.07 gFS Forward Transconductance VDS = -30 V, ID = -8.5 A -- 12 -- S -- 1100 1400 pF -- 510 660 pF -- 120 155 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -13.5 A, RG = 25 (Note 4, 5) VDS = -48 V, ID = -27 A, VGS = -10 V (Note 4, 5) -- 18 45 -- 185 380 ns -- 30 70 ns -- 90 190 ns -- 33 43 nC -- 6.8 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -17 A ISM -- -- -68 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -17 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -27 A, dIF / dt = 100 A/s (Note 4) -- 105 -- ns -- 0.41 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.25mH, IAS = -17A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 1 10 1 10 -I D , Drain Current [A] -I D, Drain Current [A] Top : 0 10 175 0 25 10 -55 Notes : 1. VDS = -30V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.24 0.16 VGS = - 10V 0.12 VGS = - 20V 0.08 0.04 Note : TJ = 25 0.00 -I DR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 0.20 1 10 0 10 175 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 2000 Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 1000 Crss 500 0 -1 10 10 -V GS , Gate-Source Voltage [V] 2500 Capacitance [pF] 25 VDS = -30V 8 VDS = -48V 6 4 2 Note : ID = -27 A 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 0 5 10 15 20 25 30 35 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -13.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 18 Operation in This Area is Limited by R DS(on) 2 15 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 10 10 ms 1 10 100 ms DC 0 10 Notes : o 1. TC = 25 C 12 9 6 3 o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C ( t ) = 3 . 1 9 /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 JC ( t) , T h e r m a l R e s p o n s e 75 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Z t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Typical Characteristics FQPF27P06 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 VDD Time VDS (t) ID (t) IAS BVDSS www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 (c)2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com FQPF27P06 P-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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