2SK3018
Transistor
Rev.B 1/3
2.5V Drive
Nch
MOS FET
2SK3018
zStructure
Silicon N-channel
MOSFET
zApplicat ions
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zExternal dimensions (Unit : mm)
Each lead has same dimensions
UMT3
Abbreviated symbol : KN
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
(1) Source
(2) Gate
(3) Drain
zPackaging specifications
T106
3000
2SK3018
Type
Package
Code
Basic ordering unit
(pieces)
Taping
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
PD∗
2
Tch
30 V
V
mA
mW
°C
±20
±100ID
IDP∗
1
Continuous
Pulsed mA±400
200
150
Tstg °C−55 to +150
Symbol Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zEquivalent circuit
Drain
Source
Gate
∗
Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
zThermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
∗ With each pin mounted on the recommended lands. 625
∗
2SK3018
Transistor
Rev.B 2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
C
iss
|Y
fs
|
C
oss
C
rss
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
5
13
−
9
4
±1
−
1
1.5
8
−713
−
−
−
−
µAV
GS
= ±20V, V
DS
= 0V
I
D
= 10µA, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
= 3V, I
D
= 100µA
I
D
= 10mA, V
GS
= 4V
I
D
= 1mA, V
GS
= 2.5V
V
DS
= 5V
V
DS
= 3V, I
D
= 10mA
V
GS
= 0V
f = 1MHz
V
µA
V
Ω
Ω
pF
mS
pF
pF
t
d(on)
−15 −I
D
= 10mA, V
DD
5Vns
t
r
−35 −V
GS
= 5Vns
t
d(off)
−80 −R
L
= 500Ωns
t
f
−80 −R
G
= 10Ωns
Typ. Max. Unit Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
t
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Static drain-source on-state
resistance
zElectrical characteristic curves
012345
0
0.05
0.1
0.15
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=1.5V
4V
2V
Ta=25°C
Pulsed
Fig.1 Typical output characteristics
04
0.1m
100m
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : VGS (V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta=125°C
75°C
25°C
−25°C
V
DS
=3V
Pulsed
Fig.2 Typical transfer characteristics
−50 0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : VGS(th) (V)
CHANNEL TEMPERATURE : Tch (°C)
0.5
−25 25 50 75 100 125 150
Fig.3 Gate threshold voltage vs.
channel temperature
VDS=3V
ID=0.1mA
Pulsed
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
10
20
Ta=125
°C
75
°C
25
°C
−25
°C
V
GS
=4V
Pulsed
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
10
20
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
0 5 10 15 20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=0.1A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
Ta=25°C
Pulsed
I
D
=0.05A
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
2SK3018
Transistor
Rev.B 3/3
−50 0 25 150
0
3
6
9
CHANNEL TEMPERATURE : Tch (°C)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
−25 50 75 100 125
2
1
4
5
7
8
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=50mA
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
0.05
0.1
0.2
0.1 0.2 0.5
0.002
Ta=−25
°C
25
°C
75
°C
125
°C
V
DS
=3V
Pulsed
Fig.8 Forward transfer
admittance vs. drain current
200m
REVERSE DRAIN CURRENT : IDR (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
1.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
VGS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
Fig.9 Reverse drain current vs.
source-drain voltage ( Ι )
200m
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25
°C
Pulsed
V
GS
=4V 0V
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0.1
1
2
50
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : VDS (V)
0.5
0.2 0.5 1 2 5 10 20 50
5
10
20
Fig.11 Typical capacitance vs.
drain-source voltage
Ciss
Coss
Crss
Ta=25
°C
f=1MHZ
VGS=0V
0.1
10
20
500
SWITCHING TIME : t (ns)
DRAIN CURRENT : I
D
(mA)
5
0.2 0.5 1 2 5 10 20 50
50
100
200
1000
2100
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Ta=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
t
d(off)
t
r
t
d(on)
t
f
zSwitching characteristics measurement circuit
Fig.13 Switching time measurement circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90% 50%
10%
90%
10%
50%
Pulse width
10%
VGS
VDS
90% t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching time waveforms
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
