UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0s(Typ.) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 x 0.8t ) VALUE UNIT -50 -50 -5 -2 0.5 1 150 -55 ~ +150 V V V A W W C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current Collector to emitter breakdown voltage DC Current Gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time UTC SYMBOL TEST CONDITIONS ICBO IEBO VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX UNIT -1.0 -1.0 A A V -50 70 40 240 -0.5 V -1.2 V MHz pF s s s 100 40 0.1 1.0 0.1 CO. LTD 1 QW-R208-021,A UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE O 70 - 140 Y 120 - 240 TYPICAL PERFORMANCE CHARACTERISTICS -1.0 IB=-5mA -0.8 -10 -20 VCE-IC -40 -80 I(tot) mA -120 -0.6 -160 -0.4 -200 -0.2 0 0 COMMON EMITTER Ta=25 -0.4 Collector Emitter Voltage VCE (V) Collector Emitter Voltage VCE (V) VCE-IC VCE-IC -0.6 -120 -160 -200 -0.2 -0.4 UTC COMMON EMITTER Ta=-55 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) -80 -120 -0.6 -160 -0.4 -180 -200 -0.2 0 COMMON EMITTER Ta=100 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) hFE-Ic 500 DC Current Gain hFE Collector Emitter Voltage VCE (V) -80 0 IB=-5mA -60 -20 -30 -40I(tot) mA 1000 IB=-10mA -20 -30 -40 -60 -0.8 I(tot) mA 0 -0.8 0 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) -1.0 -0.4 -1.0 300 Ta=100 100 50 COMMON EMITTER VCE=-2V I(tot) mA 25 -55 30 10 -0.005 -0.01 -0.3 -1 -0.03 -0.1 Collector Current IC(A) UNISONIC TECHNOLOGIES CO. LTD -3 2 QW-R208-021,A UTC 2SA1020 VCE(sat)-Ic -1 COMMON EMITTER IC/IB=20 -0.5 I(tot) mA -0.3 Ta=100 -0.1 -0.05 -55 -0.03 25 -0.01 -0.005 -0.01 VCE(sat)-Ic -10 Collector -Emitter Saturation Voltage VBE(sat) (V) Collector -Emitter Saturation Voltage VCE(sat) (V) PNP EPITAXIAL SILICON TRANSISTOR -0.3 -1 -0.03 -0.1 Collector Current IC(A) -5 COMMON EMITTER IC/IB=20 I(tot) mA -3 -55 -1 -0.5 Ta=100 25 -0.3 -0.1 -0.005 -0.01 -3 -0.3 -1 -0.03 -0.1 Collector Current IC(A) Ic -VBE Pc-Ta COMMON EMITTER VCE=-2V -1.5 Ta=100 Collector Power Dissipatoin Pc,(W) Collector Current Ic (A) -2.0 I(tot) mA -55 -1.0 25 -0.5 0 -0.4 -1.6 -0.8 -1.2 Base Emitter Voltage VBE(V) 0 -3 1.2 1.0 1.Mounted on Ceramic Substrate (250mm2*0.8t) I(tot) 2.Ta=25 mA 1 0.8 0.6 2 0.4 0.2 0 0 20 80 100 120 140 160 40 60 Ambient Temperature Ta Safe Operation Area -5 Collector Current Ic (A) -3 Ic max.(pulsed)* Ic max.(pulsed)* 10 0m -1 1s* -0.5 -0.3 s* 10ms* 1ms* DC OPERATION Ta=25 -0.1 -0.05 -0.03 -0.01 *Single nonrepetitive pulse Ta=25 Curves must be derated linearly with increase in temperature VCEO MAX -100 -0.3 -1 -3 -10 -30 Collector Emitter Voltage VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-021,A UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R208-021,A