UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-021,A
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
FEATURES
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0µs(Typ.)
*Complement to UTC 2SC2655
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current Ic -2 A
Collector Power Dissipation PC 0.5 W
Collector Power Dissipation PC* 1 W
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
* : Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector cut-off current ICBO VCB=-50V, IE=0 -1.0 µA
Emitter cut-off current IEBO VEB=-5V, IC=0 -1.0 µA
Collector to emitter breakdown
voltage
V(BR)CEO Ic=-10mA, IB=0 -50 V
DC Current Gain hFE1
hFE2
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
70
40
240
Collector to emitter saturation
voltage
VCE(sat) Ic=-1A, IB=-0.05A -0.5 V
Base to emitter saturation voltage VBE(sat) Ic=-1A, IB=-0.05A -1.2 V
Transition frequency fT VCE=-2V, Ic=-0.5A 100 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 40 pF
Turn-on time ton 0.1 µs
Storage time tstg 1.0 µs
Switching time
Fall time tf 0.1 µs
UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-021,A
CLASSIFICATION OF hFE1
RANK O Y
RANGE 70 - 140 120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
I(tot)
mA
-0.4
VCE-IC
0-0.8
0-2.0-1.2 -2.4 -2.8
-0.2
-0.6
-0.8
-1.0
Collector Current Ic(A)
I(tot)
mA
-0.01
30
hFE-Ic
-0.005 -0.03 -3
10
Collector Current IC(A)
DC Current Gain hFE
50
100
300
25℃
500
Collector Emitter Voltage VCE (V)
IB=-5mA
COMMON EMITTER
Ta=25 ℃
-1.6
-0.4
-10 -20 -40 -80
-120
-160
-200
I(tot)
mA
-0.4
VCE-IC
0-0.8
0-2.0-1.2 -2.4 -2.8
-0.2
-0.6
-0.8
-1.0
Collector Current Ic(A)
Collector Emitter Voltage VCE (V)
IB=-5mA
COMMON EMITTER
Ta=100℃
-1.6
-0.4
-30-20 -40 -80
-120
-160
-200
-180
-60
I(tot)
mA
-0.4
VCE-IC
0-0.8
0-2.0-1.2 -2.4 -2.8
-0.2
-0.6
-0.8
-1.0
Collector Current Ic(A)
Collector Emitter Voltage VCE (V)
IB=-10mA
COMMON EMITTER
Ta=-55℃
-1.6
-0.4
-20 -30 -80
-120
-160
-200
-40 -60
-0.1 -0.3 -1
1000
COMMON EMITTER
VCE=-2V
Ta=100℃
-55℃
UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R208-021,A
I(tot)
mA
-0.4
Ic -VBE
0-0.8
0-1.2
-0.5
-1.0
-1.5
-2.0
Base Emitter Voltage VBE(V)
Collector Current Ic (A)
-1.6
I(tot)
mA
20
Pc-Ta
040
010060 140 160
0.2
0.6
0.8
1.0
Collector Power Dissipatoin Pc,(W)
1.Mounted on Ceramic
Substrate (250mm2*0.8t)
2.Ta=25℃
80
0.4
I(tot)
mA
-0.01
-0.03
VCE(sat)-Ic
-0.005 -0.03 -3
-0.01
Collector Current IC(A)
Collector -Emitter Saturation
Voltage VCE(sat) (V)
-0.05
-0.1
-0.3
-0.5
-0.1 -0.3 -1
-1
COMMON EMITTER
IC/IB=20
Ta=100℃
25℃
-55℃
I(tot)
mA
-0.01
-0.3
VCE(sat)-Ic
-0.005 -0.03 -3
-0.1
Collector Current IC(A)
Collector -Emitter Saturation
Voltage VBE(sat) (V)
-0.5
-1
-3
-5
-0.1 -0.3 -1
-10
COMMON EMITTER
IC/IB=20
Ta=100℃25℃
-55℃
Ta=100℃
25℃
-55℃
COMMON EMITTER
VCE=-2V
Ambient Temperature Ta℃
120
1.2
1
2
-0.3
Safe Operation Area
Collector Current Ic (A)
-1
-0.1
-0.3 -3
-0.05
-0.5
-1
Collector Emitter Voltage VCE (V)
-3
-5
-10 -30 -100
Ic max.(pulsed)*
-0.03
-0.01
Ic max.(pulsed)* 10ms*
1ms*
100ms*
1s*
DC OPERATION
Ta=25℃
*Single nonrepetitive pulse
Ta=25℃
Curves must be derated
linearly with increase
in temperature
VCEO MAX
UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 4
QW-R208-021,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
