-- 25C D) MM 8235605 OO044NSS TmmSIEG Tr3l-z3 NPN Silicon RF Transistors BF 457 4 15C 04495 oo aoe SIEMENS AKTIENGESELLSCHAF for video and AF output stages BF 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic package (12 A 3 DIN 41 869). The collector is conductively connected ta the metallic mounting area of the transistor. The transistors are especially designed for use in video output stages of TV receivers, for AF output stages of high operating voltage, and as driver transistors in horizontal deflection circuits, . Type Ordering code BF 457 Q62702-F315 BF 458 Q62702-F316 BF 459 062702-F317 Mica washer Q62902-B62 =F te Spring washer Q62902-B63 i e A3 DIN 137 -whynge- Approx. weight 0.5 g Dimensions in mm Maximum ratings | BF457 | BF458 | BF 469 Collector-base voltage Veg | 160 270 300 Vv Collector-emitter voltage Vero 160 250 300 Vv Emitter-base voltage Vepo 5 5 5 Vv Collector current Ic 100 100 100 mA Base current Ig 50 50 50 mA Collector peak current Tom 300 300 300 mA Junction temperature T; 150 150 150 C Storage temperature range Tstg -55 to +150 C Total power dissipation (Tamb S 25C) Prot 1.2 1.2 1.2 Ww (Tease & 45C) Prot 10 10 10 Ww Thermal resistance Junction to ambient air Renda $104 $104 | $104 | K/AW Junction to case Rinac $10 $10 $10 KAW 1) Starting torque for the M3 screw used for mounting = max. 0.8 Nm. Thermal resistance of a 50 mica washer, ungreased 8 K/W; greased 4 K/W. A washer or corrugated spring washer A 3 DIN 137 should be placed below the screw head. 541 1918 D-09 diva on end SAY LORD de a onthe st Yeh skeen es Wee ae wen vay ARQ LH om FARIA Fue ai 8 ~ 25C D MM 4235605 OOO4W49L 1 MBSIEG. -7~3/~AZ 25C 04496 _CODs=. BF 457 . : . BF 458 SIEMENS AKTIENGESELLSCHAF --~--_ Bk 4559 Static characteristics (T,,,, = 25C) BF 457 BF 458 BF 459 Coltector-base breakdown voltage (Jo = 100 pA) Vericao | > 160 >250 > 300 Vv Collactor-emitter breakdown voltage (Ie = 10 mA) Visriceo >160 >250 >300 Vv Emitter-base breakdown voltage (lg = 100 pA) VieRiEsO >5 >5 >5 Vv Collector cutoff current (Ves = 100 Vv) Tego <50 ~ - nA (Veg = 200 v) Icso - <50 - nA (Vep = 250 V) Icpo - - <50 nA Emitter cutoff current (Veg =3 Vv) Tego <650 <50 <50 nA Collector-amitter saturation voltage (Ic = 30 mA; Ig = 6 mA) Vetsat <1 <1 <1 Vv DC current gain (Ig = 30 mA; Vce =10 Vv) hee >25 >25 >25 ~- Dynamic characteristics (Tanp = 25C) Transition frequency (Vce = 10 V: Ig = 15 mA; f = 20 MHz) fr 90 90 90 MHz Reversetransfer capacitance (Veg = 30 V; f= 1 MHz; Ig = 1 mA) Ci2e | 4.2 4,2 4.2 pF Output capacitance (Veg = 30 V: f= 1 MHz; Je = 0) C226 5.5 5.5 5.5 pF 542 - 1919 D-10 ernest we - sk - ea 25C D MM S@3Sb05 OOO449? 3 MESIEG . 7-3/-23 oo 25C 04497 DO BE 457 SIEMENS AKTIENGESELLSCHAF _ BF 489 Total perm, power dissipation versus temperature Pre = F(T} Permissitie pulse load t fuuc = f (0: v = parameter g 5 fine ct Permissible oparating range Permissible operating range Ig =f (Vee); (Tease = 45C); = 0.01 Io = # (Vee): (Tease = 45C): v = 0.1 W W 00 00 70 70 2 50 0 0 20 5 o 0 0 7 7 5 5 av to! 5 0 nV Ne 543 A eaLtpmuatnyil, ath. Pee UN C1 Mam te a vam AMAL ola ad ay 25C D MM 823505 OOO44SS 5 MESIEG T~F/-23 _..___25 SIEMENS AKTIENGESELLSCHAF Collector current Ic = f (Vee) mae =10V; Teasg = parameter v f 0 05 40V > Veg Base current [fg =f (ic) Vee = 10 V: Tears = parameter a 0 20 30mA r i, 544 neem ce eae See Re nett 1921 D-12 04498 OD BF 457 BF 458 BF 459 Output charactaristics I = f (Vee) Ig = parameter chee eerie sos 8 # 8&8 8 &8@ & 8 & BP 2 s 8 3 & sav __P Vee Transition frequency fr = f (7c) Vce = 10 V; f = 20 MHz Miz 150 0 e 2 0 40mA ek