2SA1020
2010-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SC2655
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Base current IB −0.2 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
2SA1020
2010-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −50 V, IE = 0 ⎯ ⎯ −1 μA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V
hFE (1) V
CE = −2 V, IC = −0.5 A 70 ⎯ 240
DC current gain hFE (2) V
CE = −2 V, IC = −1.5 A 40 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −0.5 V
Base-emitter saturation voltage VBE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −1.2 V
Transition frequency fT V
CE = −2 V, IC = −0.5 A ⎯ 100 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 40 ⎯ pF
Turn-on time ton ⎯ 0.1 ⎯
Storage time tstg ⎯ 1 ⎯
Switching time
Fall time tf
IB1 = 0.05 A , IB2 = 0.05 A
DUTY CYCLE ≤ 1%
⎯ 0.1 ⎯
μs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
20
μ
sInput IB2
IB1
Output
VCC
=
−
30 V
IB1
30 Ω
IB2
A1020
Lot No.
Note 2
Characteristics
indicator
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2SA1020
2010-11-09
3
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
VCE – IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
DC current gain hFE
Collector current IC (A)
hFE – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Common emitter
Ta = 25°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−80
−200
−40−20
−120
−2.8
−160
−10
Common emitter
Ta = 100°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−80
−30 −60 −40
−180
−2.8
−200
−160
−120
−20
0
0
−1.0
−0.2
IB = −10 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−120
−80 −30 −20
−160
−2.8
−200
−60 −40
Common emitter
Ta = −55°C
Common emitter
IC/IB = 20
−1
−0.01
−0.5
−0.03
−0.05
−0.1
−0.3
−0.01 −0.03 −0.1 −0.3 −1 −3
Ta = 100°C
−55
25
Common emitter
IC/IB = 20
−10
−0.1
−5
−0.3
−0.5
−1
−3
−0.01 −0.03 −0.1 −0.3 −1 −3
Ta = −55°C
25
100
Common emitter
VCE = −2 V
1000
10
500
30
50
100
300
−0.01 −0.03 −0.1 −0.3 −1
Ta = 100°C
−55
25
−3
2SA1020
2010-11-09
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Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (mW)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
0
0
Common emitter
VCE = −2 V
25 −55
Ta = 100°C
−2.0
−0.4 −0.8 −1.2 −1.6 −2.0
−0.5
−1.0
−1.5
0
0
40 80 120 160 200 240
200
400
1000
600
800
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−5
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
−30 −100−5 −10 −1 −3
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−50
1 s*
−0.5 −0.3
IC max (continuous)
2SA1020
2010-11-09
5
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