2N6036 (PNP) & 2N6039 (NPN) Silicon Complementary Transistors Darlington Power Amplifier TO-126 Type Package Description: The 2N6036 (PNP) and 2N6039 (NPN) are silicon complementary Darlington power transistors in a TO-126 type case designed for general-purpose amplifier and low-speed switching applications. Absolute Maximum Ratings: (Note 1) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 - - V OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 100mA, IB = 0 ICEO VCE = 80V, IB = 0 - - 100 A ICBO VCB = 80V, IE = 0 - - 500 A ICEX VCE = 80V, VBE(off) = 1.5V - - 100 A - - 500 A - - 2.0 mA IEBO VBE = 5V, IC = 0 TC = +125C Note 1. Stresses exceeding maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 0.5A 500 - - VCE = 3V, IC = 2A 750 - 15000 VCE = 3V, IC = 4A 100 - - IC = 2A, IB = 8mA - - 2.0 V IC = 4A, IB = 40mA - - 3.0 V ON Characteristics DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA - - 4.0 V Base-Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A - - 2.8 V Dynamic Characteristics Small-Signal Current-Gain |hfe| VCE = 10V, IC = 750mA, f = 1MHz 25 - - Output Capacitance 2N6036 Cob VCB = 10V, IE = 0, f = 0.1MHz - - 200 pF - - 100 pF 2N6039 2N6039 .330 (8.38) Max C .175 (4.45) Max B E .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max 2N6036 .030 (.762) Dia E C C B B .090 (2.28) E .130 (3.3) Max