2N6036 (PNP) & 2N6039 (NPN)
Silicon Complementary Transistors
Darlington Power Amplifier
TO−126 Type Package
Description:
The 2N6036 (PNP) and 2N6039 (NPN) are silicon complementary Darlington power transistors in a
TO−126 type case designed for general−purpose amplifier and low−speed switching applications.
Absolute Maximum Ratings: (Note 1)
Collector−Emitter Voltage, VCEO 80V......................................................
Collector−Base Voltage, VCBO 80V.......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous 4A...................................................................
Peak 8A........................................................................
Base Current, IB100mA................................................................
Total Power Dissipation (TC = +25C), PD40W............................................
Derate Above 25C 320mW/C.....................................................
Total Power Dissipation (TA = +25C), PD1.5W.............................................
Derate Above 25C 12mW/C......................................................
Operating Junction Temperature Range, TJ−65 to +150C..................................
Storage Temperature Range, Tstg −65 to +150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 3.12C/W....................................
Thermal Resistance, Junction−to−Ambient, RthJA 83.3C/W..................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 80 − − V
Collector Cutoff Current ICEO VCE = 80V, IB = 0 − − 100 A
ICBO VCB = 80V, IE = 0 − − 500 A
ICEX VCE = 80V,
VBE(off) = 1.5V
− − 100 A
TC = +125C− − 500 A
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 2.0 mA
Note 1. Stresses exceeding maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain hFE VCE = 3V, IC = 0.5A 500 − −
VCE = 3V, IC = 2A 750 −15000
VCE = 3V, IC = 4A 100 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 8mA − − 2.0 V
IC = 4A, IB = 40mA − − 3.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA − − 4.0 V
Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A − − 2.8 V
Dynamic Characteristics
Small−Signal Current−Gain |hfe| VCE = 10V, IC = 750mA, f = 1MHz 25 − −
Output Capacitance
2N6036 Cob VCB = 10V, IE = 0, f = 0.1MHz − − 200 pF
2N6039 − − 100 pF
2N6039
2N6036
B
C
E
B
C
E
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
ECB