RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features Title HRP 20C The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns bt A, 00V pert al ode) utho This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. * Avalanche Energy Rated Formerly developmental type TA49096. * Power Switching Circuits eyrds A, 00V pert al ode, errpoon, minctor, pert al ode, ache ergy ted, RHRP8120CC PACKAGE TO-220AB * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V * Planar Construction Applications * Switching Power Supplies * General Purpose Ordering Information PART NUMBER * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC BRAND Packaging JEDEC TO-220AB RHR8120C ANODE 2 CATHODE ANODE 1 NOTE: When ordering, use the entire part number. Symbol K CATHODE (FLANGE) A1 Absolute Maximum Ratings A2 (Per Leg) TC = 25oC, Unless Otherwise Specified RHRP8120CC UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 1200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1200 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 140oC) 8 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 16 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 100 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ -65 to 175 oC (c)2001 Fairchild Semiconductor Corporation RHRP8120CC Rev. A RHRP8120CC Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 8A - - 3.2 V IF = 8A, TC = 150oC - - 2.6 V VR = 1200V - - 100 A VR = 1200V, TC = 150oC - - 500 A IF = 1A, dIF/dt = 200A/s - - 55 ns IF = 8A, dIF/dt = 200A/s - - 65 ns ta IF = 8A, dIF/dt = 200A/s - 30 - ns tb IF = 8A, dIF/dt = 200A/s - 20 - ns QRR IF = 8A, dIF/dt = 200A/s - 165 - nC VR = 10V, IF = 0A - 25 - pF 2 oC/W VF IR trr CJ - RJC - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 40 500 175oC IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 100 10 100oC 175oC 25oC 1 10 100oC 1 25oC 0.1 0.01 0.001 0.5 0 1 2 3 4 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2001 Fairchild Semiconductor Corporation 5 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP8120CC Rev. A RHRP8120CC Typical Performance Curves (Continued) 100 60 TC = 100oC, dIF/dt = 200A/s 50 40 trr 30 ta 20 80 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 200A/s tb 60 trr 40 ta 20 10 0 0.5 1 0 0.5 8 4 tb 1 IF , FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/s 100 80 trr 60 40 ta 20 tb 0 0.5 1 8 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT 120 4 IF , FORWARD CURRENT (A) 4 8 10 8 DC 6 SQ. WAVE 4 2 0 100 130 115 145 160 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2001 Fairchild Semiconductor Corporation RHRP8120CC Rev. A RHRP8120CC Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRP8120CC Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H