AO4411 30V P-Channel MOSFET General Description Product Summary The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -8A RDS(ON) (at VGS=-10V) < 32m RDS(ON) (at VGS = -4.5V) < 55m VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current C Units V 20 V -8 ID TA=70C Maximum -30 -6.6 A IDM -40 Avalanche Current C IAS, IAR 23 A Avalanche energy L=0.1mH C TA=25C EAS, EAR 26 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 11: Nov 2011 3.1 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 2 RJA RJL www.aosmd.com -55 to 150 Typ 31 59 16 C Max 40 75 24 Units C/W C/W C/W Page 1 of 6 AO4411 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -30 -1 TJ=55C -5 Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 nA -2.4 V 21 32 31.5 38 VGS=-4.5V, ID=-5A 33 55 19 TJ=125C gFS Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance Rg A 100 Static Drain-Source On-Resistance Output Capacitance Units -1.85 VGS=-10V, ID=-8A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz m m S -1 V -3.5 A 760 pF 140 pF 95 pF 3.2 5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 16 nC Qg(4.5V) Total Gate Charge 6.7 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 1.5 2.5 nC 3.2 nC 8 ns 6 ns 17 ns tf Turn-Off Fall Time 5 ns trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/s 15 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s 9.7 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 11: Nov 2011 www.aosmd.com Page 2 of 6 AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 -10V -6V -5V -4.5V VDS=-5V 35 25 30 -ID(A) -ID (A) 20 -4V 25 20 15 -3.5V 15 10 10 125C 5 VGS=-3V 5 0 0 0 1 2 3 4 1 5 50 2 2.5 3 3.5 4 4.5 5 1.8 Normalized On-Resistance 45 VGS=-4.5V 40 RDS(ON) (m ) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 30 25 20 VGS=-10V 15 10 VGS=-10V ID=-8A 1.6 1.4 17 5 VGS=-4.5V ID=-5A2 10 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+02 ID=-8A 1.0E+01 40 60 1.0E+00 125C 40 -IS (A) RDS(ON) (m ) 25C 125C 25C 1.0E-01 1.0E-02 1.0E-03 20 25C 1.0E-04 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 11: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-8A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 2 Coss 200 Crss 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 14 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 -IAR (A) Peak Avalanche Current 100.0 10.0 TA=150C TA=100C -ID (Amps) TA=25C 10s 100s RDS(ON) limited 1ms 1.0 10ms 0.1 TJ(Max)=150C TA=25C TA=125C 10s DC 0.0 10.0 0.01 1 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 11: Nov 2011 www.aosmd.com Page 4 of 6 AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 11: Nov 2011 www.aosmd.com Page 5 of 6 AO4411 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 11: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6