SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995 ✪
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR30 V
Forward Current IF200 mA
Forward Voltage @ IF =10mA VF400 mV
Repetitive Peak Forward Current IFRM 300 mA
Non Repetitive Forward Current t<1s IFSM 600 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Storage Temperature Range Tstg -55 to +150 °C
JunctionTemperature ¤ Tj125 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V(BR)R 30 50 V IR=10µA
Forward Voltage VF135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current IR2.5 4 µAVR=25V
Diode Capacitance CD7.5 10 pF f=1MHz,VR=1V
Reverse Recover
Time
trr 5nsswitched from
IF=10mA to IR=10mA
RL=100Ω, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
32
1
32
1
23
1
3
1
BAT54 SERIES
1
3
2
BAT54 BAT54A BAT54S BAT54C Device Type
SINGLE COMMON
ANODE
SERIES COMMON
CATHODE
Pin Configuration
L4Z L42 L44 L43 Partmarking Detail
30
10 20
0
+125°C
+85°C
TA - Ambient Temperature ( °C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0 50 100 150
Forward Voltage VF (V)
IF v VF Characteristics
00.60.3
+125°C
10
µ
100
µ
1m
10m
100m
1
0.9
+85°C
+25°C
0.15 0.45 0.75
10
µ
100
µ
10m
1m
Reverse Voltage VR(V)
IRv VRCharacteristics
Reverse Voltage VR (V)
020
10 30
1
µ
+25°C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 43 - 5
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995 ✪
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR30 V
Forward Current IF200 mA
Forward Voltage @ IF =10mA VF400 mV
Repetitive Peak Forward Current IFRM 300 mA
Non Repetitive Forward Current t<1s IFSM 600 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Storage Temperature Range Tstg -55 to +150 °C
JunctionTemperature ¤ Tj125 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V(BR)R 30 50 V IR=10µA
Forward Voltage VF135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current IR2.5 4 µAVR=25V
Diode Capacitance CD7.5 10 pF f=1MHz,VR=1V
Reverse Recover
Time
trr 5nsswitched from
IF=10mA to IR=10mA
RL=100Ω, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
32
1
32
1
23
1
3
1
BAT54 SERIES
1
3
2
BAT54 BAT54A BAT54S BAT54C Device Type
SINGLE COMMON
ANODE
SERIES COMMON
CATHODE
Pin Configuration
L4Z L42 L44 L43 Partmarking Detail
30
10 20
0
+125°C
+85°C
TA - Ambient Temperature ( °C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0 50 100 150
Forward Voltage VF (V)
IF v VF Characteristics
00.60.3
+125°C
10
µ
100
µ
1m
10m
100m
1
0.9
+85°C
+25°C
0.15 0.45 0.75
10
µ
100
µ
10m
1m
Reverse Voltage VR(V)
IRv VRCharacteristics
Reverse Voltage VR (V)
020
10 30
1
µ
+25°C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 43 - 5
