
LESHAN RADIO COMPANY, LTD.
LBAW56LT1-1/3
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R70 Vdc
Forward Current I F200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) PD225 mW
TA=25°C
erate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate,(2) TA=25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature T J, T stg -55 to +150 °C
DEVICE MARKING
LBAW56LT1 = A1
ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V (BR) 70 – Vdc
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current I R µAdc
(VR= 25 Vdc, TJ= 150 °C) – 30
(VR= 70 Vdc) – 2.5
(VR= 70 Vdc, TJ= 150 °C) – 50
Diode Capacitance C D – 2.0 pF
(VR= 0, f = 1.0 MHz)
Forward Voltage V F mVdc
(IF= 1.0 mAdc) – 715
(I F= 10 mAdc) – 855
(IF= 50 mAdc) – 1000
(IF= 150 mAdc) – 1250
Reverse Recovery Time t rr – 6.0 ns
(IF= IR= 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL= 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Monolithic Dual Switching Diode
Common Anode
3
ANODE
1
CATHODE
2
CATHODE
SOT– 23 (TO–236AB)
LBAW56LT1
1
3
2
•Pb−FreePackage is Available.
Device PACKAGE Shipping
LBAW56LT1
LBAW56LT1G
SOT-23 3000 Tape & Reel
3000 Tape & Reel
ORDERING INFORMATION
SOT-23