PSMN1R1-40BS,118 - NEXPERIA

1. Product profile

1.1 General description

S tan dard level N-channel MOSFET in D2P AK (SOT 404) package qualified to 175 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for standard level gate drive

sources

1.3 Applications

DC-to-DC convertors

Load switching

Motor contro l

Server power supplies

1.4 Quick reference data

[1] Continuous current is limited by package

PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Rev. 2 — 29 February 2012 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175°C --40V

IDdrain current Tmb =25°C; V

GS =10V; see Figure 1 [1] - - 120 A

Ptot total power dissipation Tmb =25°C; see Figure 2 - - 306 W

Tjjunction temperature -55 - 175 °C

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=25A; T

j= 100 °C;

see Figure 12 ;see Figure 13 -1.682mΩ

VGS =10V; I

D=25A; T

j=25°C;

see Figure 13 - 1.16 1.3 mΩ

Dynamic character istics

QGD gate-drain charge VGS =10V; I

D=75A; V

DS =20V;

see Figure 14 ;see Figure 15 -32-nC

QG(tot) total gate charge - 136 - nC

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

VGS =10V; T

j(init) =25°C; I

D=120A;

Vsup ≤40 V; unclamped; RGS =50Ω;

tp=0.1ms

--1.4J

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 2 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

2. Pinning information

[1] It is not possible to make connection to pin 2.

3. Ordering information

4. Limiting values

[1] Continuous current is limited by package.

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT404 (D2PAK)

2 D drain[1]

3Ssource

mb D drain

mbb076

Table 3. Ordering informatio n

Type number Package

Name Description Version

PSMN1R1-40BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead croppe d) SOT404

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 40 V

VDGR drain-gate voltage Tj≥25 °C; Tj≤175 °C; RGS =20kΩ-40V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb =100°C [1] - 120 A

VGS =10V; T

mb =25°C; see Figure 1 [1] - 120 A

IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 1320 A

Ptot total power dissipation Tmb =25°C; see Figure 2 - 306 W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode

ISsource current Tmb =25°C [1] - 120 A

ISM peak source current pulsed; tp≤10 µs; Tmb = 25 °C - 1320 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy VGS =10V; T

j(init) =25°C; I

D=120A; V

sup ≤40 V ;

unclamped; RGS =50Ω; tp=0.1ms -1.4J

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 3 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Fig 1. Normalized continuous drain curre nt as a

function of mounting base temperature Fig 2. Normalized tota l po we r dis si pation as a

function of mounting ba s e temperature

Fig 3. Safe operating area; continuou s and peak drain currents as a function of drain-source voltage

003aaf329

100

150

200

250

300

350

0 50 100 150 200

Tmb (C)

(A)

(1)

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

003aaf328

10-1

102

103

104

10-1 1 10 102

V DS (V)

(A)

Limit RDSon = VDS / ID

100

s

10 ms

tp =10 s

100 ms

1 ms

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 4 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting base see Figure 4 - 0.22 0.49 K/W

Rth(j-a) thermal resistance from

junction to ambient minimum footprint; mounted on

a printed-circuit board -50-K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aag770

10-3

10-2

10-1

-6

10-5 10-4 10-3 10-2 10-1 1

tp (s)

tp T

δ =

δ = 0.5

0.2

0.1

0.05

0.02

single shot

th(j-mb)

(K/W)

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 5 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j= -55 °C 36 - - V

ID=250µA; V

GS =0V; T

j=25°C 40--V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 10 --4.6V

ID=1mA; V

DS =V

GS; Tj= 175 °C;

see Figure 10 1--V

ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 11;see Figure 10 234V

IDSS drain leakage current VDS =40V; V

GS =0V; T

j= 25 °C - 0.02 10 µA

VDS =40V; V

GS =0V; T

j= 175 °C - - 500 µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j= 25 °C - 10 100 nA

VGS =-20V; V

DS =0V; T

j= 25 °C - 10 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=25A; T

j= 100 °C;

see Figure 12 ;see Figure 13 -1.682mΩ

VGS =10V; I

D=25A; T

j= 175 °C;

see Figure 12 ;see Figure 13 -2.32.8mΩ

VGS =10V; I

D=25A; T

j=25°C;

see Figure 13 - 1.16 1.3 mΩ

RGinternal gate resistance

(AC) f=1MHz - 1.1 - Ω

Dynamic character istics

QG(tot) total gate charge ID=0A; V

DS =0V; V

GS = 10 V - 133 - nC

ID=75A; V

DS =20V; V

GS =10V;

see Figure 14 ;see Figure 15 - 136 - nC

QGS gate-source charge - 52 - nC

QGS(th) pre-threshold

gate-source charge -30-nC

QGS(th-pl) post-threshold

gate-source charge -22-nC

QGD gate-drain charge - 32 - nC

VGS(pl) gate-source plateau

voltage ID=75A; V

DS = 20 V;see Figure 14;

see Figure 15 -6.1-V

Ciss input capacitance VDS =20V; V

GS = 0 V; f = 1 MHz;

Tj= 25 °C;see Figure 16 - 9710 - pF

Coss output capacitance - 2042 - pF

Crss reverse transfer

capacitance - 994 - pF

td(on) turn-on delay time VDS =20V; R

L=0.8Ω; VGS =5V;

RG(ext) =4.7Ω

-45-ns

trrise time - 66 - ns

td(off) turn-off delay time - 111 - ns

tffall time - 53 - ns

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 6 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 17 -0.81.2V

trr reverse recovery time IS=25A; dI

S/dt = -100 A/µs; VGS =0V;

VDS =20V -64-ns

Qrrecovered charge - 117 - nC

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

Fig 5. Forward transconductance as a function of

drain current; typical values Fig 6. Transfer characteris tics: drain current as a

function of gate-s ourc e vol tage; typical value s

Fig 7. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values Fig 8. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aaf316

100

150

200

0 15304560

ID (A)

gfs

(S)

003aaf317

0246

VGS

(V)

(A)

Tj = 25 °C

Tj = 175 °C

003aaf320

2000

6000

10000

14000

18000

1 10 102

VGS

(V)

(pF) Ciss

Crss

003aag669

4 8 12 16 20

VGS

(V)

RDSon

(mΩ)

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 7 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Fig 9. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 10. Gate-source threshold voltage as a func tion of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage Fig 12. Normalized drain-source on state resistance

factor as a function of junction temperature

003aaf319

0 0.25 0.5 0.75 1

VDS

(V)

(A)

5.2

6.0 VGS

(V) = 4.8

5.010

4.7

4.6

4.5

Tj (°C)

−60 180120060

003aad280

VGS(th)

(V)

max

typ

min

03aa35

VGS (V)

0642

10−4

10−5

10−2

10−3

10−1

(A)

10−6

min typ max

003aaf322

0.5

1.5

2.5

-60 0 60 120 180

Tj (C)

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 8 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values Fig 14. Gate charge waveform definitions

Fig 15. Gate-source vo ltage as a function of gate

charge; typical values Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aag670

0 20406080

ID (A)

RDSon

)

5.2

4.6

4.8

VGS

(V) = 5

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

003aaf323

0 40 80 120 160

QG (nC)

VGS

(V)

VDS

= 8V

20V

32V

003aaf324

102

103

104

105

10-1 1 10 102

VDS

(V)

(pF)

Ciss

Crss

Coss

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 9 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Fig 17. Source current as a func tion of source-drain voltage; typica l values

003aaf325

0 0.25 0.5 0.75 1

VSD

(V)

(A)

Tj = 25 °CTj = 175 °C

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 10 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

7. Package outline

Fig 18. Package outline SOT404 (D2PAK)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

A1D1

max. EeL

pHDQc

2.54 2.60

2.20

15.80

14.80

2.90

2.10

11 1.60

1.20 10.30

9.70

4.50

4.10 1.40

1.27 0.85

0.60 0.64

0.46

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404

e e

mounting

base

05-02-11

06-03-16

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 11 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN1R1-40BS v.2 20120229 Product data sheet - PSMN1R1-40BS v.1

Modifications: •Status changed from ob jective to product.

•Various changes to content.

PSMN1R1-40BS v.1 20110929 Objective data sheet - -

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 12 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Preview— The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data s heet— A short data sheet is an extract from a full dat a sheet with

the same product type number(s) and title. A short data sheet is intended for

quick reference only and sh ould not be re lied upon to co ntain detailed and full

information. For detailed and full informat i on see the relevant full data sheet,

which is available on request via the local Nexperia sales office.

In case of any inconsistency or conflict with the short data sheet, the full d ata

sheet shall prevail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

9.3 Disclaimers

Limited warr a nty and liability— Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an inf ormation

source outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,

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profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial saleof Nexperia.

Right to make changes— Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

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Suitability for use— Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

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malfunction of a Nexperia product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications— Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

PSMN1R1-40BS All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 2 — 29 February 2012 13 of 14

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Terms and conditions of commercial sale— Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

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applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license— No thi ng in this do cu ment may be int er preted o r

construed as an of fer to sell product s that is op en for accept ance or the grant ,

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other industrial or intellectual property rights.

Export control— This document as well as the item(s) described her ein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products— Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

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own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product cl aims resulting f rom customer design an d

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations— A non-English (translated) version of a document i s f or

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

10. Contact information

For more information, please visit:http://www.nexperia.com

For sales office addresses, please send an email to:salesaddresses@nexperia.com

Nexperia PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

29 February 2012