MAXIMUM RATINGS ze o ff &367254 oossace o ff Rating Symbo! Value Unit M oToO RC LA SC xX Ss TR S / RE Collector-Emitter Voltage VcEO 32 v iT 27 ! Collector-Base Voltage VcoBo 32 Vv B Wi 1AL BL L DL 0 Emitter-Base Voltage VEBO 5.0 v Cc 6 7 7 C 7 Collector Current Continuous Ie 100 mAdc CASE 318-03, STYLE 6 ft SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 226 mw - : Ta = 26C . 3 Collector Derate above 25C 18 mWPcC - : Thermal Resistance Junction to Ambient RaJA 556 *CW OS: 1 Total Device Dissipation Pp 300 mw 1 go Base Alumina Substrate,** Ta = 25C 2 Derate above 25C 2.4 mWwrc 2 Emitter Thermal Resistance Junction to Ambient Raa 417 CAV Junction and Storage Temperature Th Tstg 55 to +150 c *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, Seni SigTeeeee DEVICE MARKING PNP SILICON | BCW6IAL = BA; BCW6IBL = 88; BCWGICL = BG; BCW6IDL = BD | Refer to 2N5086 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbol Min Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 32 - Vdc {Ig = 2.0 mAde, Ip = 0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde (IE = 1,0 pAde, Ic = 0} Collector Cutoff Current Ices (VcE = 32 Vde} _ 20 nAdc (VcE = 32 Vde, Ta = 150C) - 20 pAdc ON CHARACTERISTICS DC Current Gain re _ (Ic = 10 zAdc, Vee = 5.0 Vde) BCW61AL 20 - BCW61BL 30 _ BCW61CL 40 - BCW61DL 100 _ (Ig = 2.0 mAdc, Vog = 5.0 Vde) BCW61AL 120 220 BCW61BL 140 310 BCW61CL : 250 460 BCW61DL 380 630 {Ic = 50 mAde, VcE = 1.0 Vde) BCW61AL 60 _ BCWetBL 80 BCW61CL 100 _ BCW61DL 100 _ AC Current Gain hfe _ (Ic = 2.0 mAdc, Vcg = 5.0 Vde, f = 1.0 kHz) BCW61AL 125 250 BCW61BL 175 350 BCWSICL 250 500 BCW61DL 350 700 Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 50 mAde, Ig = 1.25 mAdc) _ 0.55 (I = 10 mAdc, tg = 0.25 mAde) - 0.25 Base-Emitter Saturation Voltage VBE(sat) Vde (I = 50 mAds, Ig = 1,26 mAde) 0.68 1.05 (Ic = 10 mAde, Ig = 0.25 mAdc) 0.6 0.85 Base-Emitter On Voltage VeE(on) 0.6 0.78 Vdc {Ig = 2.0 mAde, VcE = 5.0 Vdc) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-137 wae a ee 12E D B ousezesu g0asaaa 2 i BCW61AL, BL, CL, DL - : / T ft 7~O/ MOTORCLA SC XSTRS/R F toe TG ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) | Characteristic | Symbol [ Min | Max | Unit ] SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo - 6.0 pF (VcE = 10 Vde, ic = 0, f = 1.0 MHz) Noise Figure NF _ 6.0 dB (i = 0.2 mAde, Vcg = 5.0 Vde, Rg = 2.0 kO, f = 1,0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn-On Time ton _ 150 ns (I = 10 mAdg, |p_ = 1.0 mAdc) Turn-Off Time toff _ 800 ns (Ip2 = 1.0 mAdc, Vag = 3.6 Vde, Ry = A2 = 5,0 kM, Ry = 990 0) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-138