SIEMENS BAT 6aW Silicon Schottky Diodes Preliminary data For mixer applications in the VHF/UHF range * For high speed switching BAT 68-04W BAT68-05W BAT68-06W 1 cisan cisez Aina S005561 [>] ASI EY Ly Ly El Az cy cz ce orn ow Type Marking |Ordering Code Pin Configuration Package BAT 68-04W [84s Q62702- T=Atl (2=K2 [3=K1/A2|\SOT-323 BAT 68-05W (85s Q62702- T=A1 [2=A2 [3 =K1/K2|SOT-323 BAT 68-06W |86s Q62702- 1=K1 |2=K2 [3=A1/A2)SOT-323 BAT 68W 83s Q62702- 1=A n.c. 3=K SOT-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage Ve 8 Vv Forward current le 130 mA Total power dissipation, BAT68W = 7s5=97C Prot 150 mW Total power dissipation, BAW68-04...06W Ts5=92C Fit 150 Junction temperature Fj 150 C Operating temperature range Top - 65 ... + 150 Storage temperature Tetg L - 65... + 159 Thermal Resistance Junction - ambient, BAT68W Aina $ 435 KW Junction - ambient, BAT68-04W...06W Rina < 550 Junctui - soldering point, BAT68W Rihus = 355 Junction - soldering point, BAT68-04W...06W Airnss 390 Semiconductor Group 317 12.96 SIEMENS BAT 68W Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. __|typ. |max. DC characteristics Breakdown voltage VBR) Vv ker) =100 pA 8 - - Reverse current ip A Va=1V, Ta= 25C - - 0.1 Va=i1Vv, Ta= 60C - - 1.2 Forward voltage Ve mv le=1mMA - 318 340 fe =10mMA 340 390 500 Diode capacitance Cr pF Va=1V,f=1 MHz - - 1 Differential forward resistance Ar Q lpe=5mMA - - 10 Semiconductor Group 318 12.96 SIEMENS BAT 68W Forward current /p = f (Ta*: Ts) Forward current [pe = f(T ,*; Ts) *): mounted on alumina 15mm x 16.7mm x 0.7mm _ *): mounted on alumina 15mm x 16.7mm x 0.7mm BAT 68W 200 mA t 160 t 140 120 100 80 60 40 20 0 20 40 60 80 100 120 C 150 tm TyTs Semiconductor Group 319 BAT 68-04W, -O5W, -O6W 200 mA 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 C 150 te TyTs 12.96 SIEMENS BAT 68W Permissible Pulse Load Ryy35 = Af) BAT 68W H (HA qe 49 kl 10 10 10 10 mai i HoH NA mu CT att LA I ae Sr al U7 Al 10 107 10's 10 te ty Permissible Pulse Load Aryss = (fp) BAT 68-04W, -O5W, -O6W Nest ne nH pe TL i Ny hi Pt _. Semiconductor Group 320 Permissible Pulse Load frmax/IFpc = ft) BAT 68W 102 ca Ha i aaa ne i i A Ht cP ra 7 a) Le 10 107 Permissible Pulse Load femax/lepc = {(t) BAT 68-04W, -O5W, -O6W 2 r" ITT * ae eR CET ee aE aA ih r i | = ET Ht " " { to cry T + [Ae KES SSS ss XS oo oo AM Sua LN Hey ri HC | i a NGI | AS i 10 10% 10 107% 10 107 e | f 40s 10 12.96 SIEMENS BAT 68W Diode capacitance Cy = f (Va) f= 1MHz BAT 68... EHDO7103 1.0 pF > 0.5 oO 0 1 2 53 Vv 4 Forward Current /- = (Ve) 02 BAT 68... HDO7101 4 107" -2 "0 0.0 O.1 0.2 O38 0.4 oe Ve Semiconductor Group 0.5 V 0.6 Differential forward resistance 7 = f(/r) f= 10kHz HDO7 104 103 BAT 68... 2 102 10! 19 1071 10 10! mA 102 - I, Reverse current /p = f (Ta) Vp = 28V 321 12.96