TLP3064(S)
1 2002-05-14
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-TRIAC
TLP3064(S)
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3064(S) consists of a zero voltage crossing turn-on
photo-triac optically coupled to a GaAlAs infrared emitting diode in a six
lead plastic DIP package.
• Peak Off-State Voltage : 600V(Min)
• Trigger LED Current : 3mA(Max)
• On-State Current : 100mA(Max)
• Isolation Voltage : 5000Vrms(Min)
•UL Recognized :UL1577,File No.E67349
•SEMKO Approved :SS EN60065
SS EN60950, File No.9841102
•BSI Approved :BS EN60065, File No.8385
BS EN60950, File No.8386
•Option(D4)type
VDE Approved :DIN VDE0884
Approved No.83649
Maximum Operating Insulation Voltage :890VPK
Highest Permissible Over Voltage :8000 VPK
(Note)When a VDE0884 approved type is needed,
please designate the “Option(D4)”
•Construction Mechanical Rating(7.62mm pich)
Creepage Distance : 7.0mm(Min)
Clearance : 7.0mm(Min)
Insulation Thickness : 0.5mm(Min)
Unit: mm
JEDEC
TOSHIBA 11-7A9
Weight: 0.39 g
PI N CONFIGURATION (TOP VIE W)
1: ANODE
2: CATHODE
3: N.C.
4:TERMINAL1
6:TERMINAL2
ZC:Zero-cross Circui
t
1
2
34
6
ZC
TLP3064(S)
2 2002-05-14
MAXIMUM RATINGS(Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 30 mA
Forward Current Derating (Ta≥25°C) ∆IF /°C −0.3 mA /°C
Peak Forward Current (100µs pulse, 100pps) IFP 1 A
LED
Reverse Voltage VR 5 V
Junction Temperature Tj 125 °C
Off-State Output Terminal Voltage VDRM 600 V
Ta=25°C 100
On-State RMS Current
Ta=70°C
IT(RMS)
50
mA
On-State Current Derating (Ta≥25°C) ∆IT/°C -1.1 mA /°C
Peak On-State Current (100µs pulse, 120pps) ITP 2 A
Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%) ITSM 1.2 A
DETECTOR
Junction Temperature Tj 115 °C
Operating Temperature Range Topr −40~100 °C
Storage Temperature Range Tstg −55~150 °C
Lead Soldering Temperature (10s) Tsol 260 °C
Isolation Voltage (AC,1min. , R.H.≤60%) (Note 2) BV
S 5000 Vrms
(Note 2)Device considered a two terminal device:Pins1,2 and 3 shorted together and
pin4 and pin6 shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage VAC — — 240 Vac
Forward Current IF 4.5 6 7.5 mA
Peak On-State Current ITP — — 1 A
Operating Temperature Topr −10 — 85 °C
TLP3064(S)
3 2002-05-14
INDIVIDUAL ELECTRICAL CHARACTERISTICS(Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF IF = 10 mA 1.2 1.4 1.7 V
Reverse Current IR V
R = 3 V — — 10 µA
LED
Capacitance CT V = 0, f=1MHz — 30 — pF
Peak Off-State Current IDRM VDRM=600V — 10 1000 nA
Peak On-State Voltage VTM ITM=100mA — — 3.0 V
Holding Current IH —
— 0.6 — mA
Critical Rate of Rise of
Off-State Voltage dv/dt Vin=240V r ms , Ta=85°C (Note3) 200 500 — V/µs
DETECTOR
Critical Rate of Rise of
Commutating Voltage dv/dt(c) Vin=60Vrm s , IT=15mA (Note3) —
0.2 — V/µs
COUPLED ELECTRICAL CHARACTERISTICS(Ta=2 5°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current IFT VT=6V ,Resistive Load — — 3 mA
Inhibit Voltage VIH IF=Rated IFT — — 50 V
Leakage in Inhibited State IIH IF=Rated IFT , VT=Rated VDRM — — 600 µA
Capacitance (Input to Output) CS VS=0 , f=1MHz — 0.8 — pF
Isolation Resistance RS VS=500V ,R.H.≤60% 1×1012 1014 — 9
AC , 1minute 5000 — —
AC , 1second,in oil — 10000 —
Vrms
Isolation Voltage BVS
DC , 1minute,in oil — 10000 — Vdc
TLP3064(S)
4 2002-05-14
TLP3064(S)
5 2002-05-14
TLP3064(S)
6 2002-05-14
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
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responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
