Semiconductor Group 1
Silicon Schottky Diodes BAT 68 …
●For mixer applications in the VHF/UHF range
●For high-speed switching
ESD:Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BAT 68 Q62702-A92683 SOT-23
BAT 68-04 Q62702-A484
BAT 68-05 Q62702-A1585
BAT 68-06 Q62702-A1986
1) For detailed information see chapter Package Outlines.
02.96
Semiconductor Group 2
BAT 68 …
●For mixer applications in the VHF/UHF range
●For high-speed switching
ESD:Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
SOT-143
BAT 68-07 Q62702-A4487
Thermal Resistance
Junction - ambient2) Rth JA ≤ 750 K/W
Junction - soldering point Rth JS ≤ 590
Parameter Symbol Values Unit
Reverse voltage VR8V
Forward current IF130 mA
Junction temperature Tj150 ˚C
Storage temperature range Tstg – 55 … + 150
Power dissipation, TS≤60 ˚C Ptot 150 mW
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group 3
BAT 68 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
UnitValues
Parameter Symbol
min. typ. max.
VBreakdown voltage
I
R = 10 µAVBR 8––
µAReverse current
VR = 1 V
VR = 1 V, TA = 60 ˚C
IR–
––
–0.1
1.2 mV
Forward voltage1)
I
F = 1 mA
I
F = 10 mA
VF–
––
–340
500
ΩDifferential forward resistance
I
F = 5 mA, f = 10 kHz rf––10
pFDiode capacitance
VR = 0, f = 1 MHz CT––1
1) Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, ∆VF = 20 mV max.
Semiconductor Group 4
BAT 68 …
Forward current IF = f (VF)
Forward current IF = f (TS; TA*)
*Package mounted on alumina
BAT 68
Forward current IF = f (TS, TA*)
*Package mounted on alumina
BAT 68-04, -05, -06, -07
Reverse current IR = f (VR)
Semiconductor Group 5
BAT 68 …
Diode capacitance CT = f (VR)
f = 1 MHz Differential forward resistance rf = f (IF)
f = 10 kHz
