MOTOROLA SC XSTRS/R F LYE D i 367254 0089685 af 7-394 MOTOROLA IRF530 ~7 m= SEMICONDUCTOR EE ma TECHNICAL DATA IRF531 IRF532 IRF533 Part Number Vps_| 'DS{on) Ip N-CHANNEL ENHANCEMENT-MODE SILICON GATE IRF530 100V |] 0.189 | 14A TMOS POWER FIELD EFFECT TRANSISTOR IRF531 cov | oten | 14a These TMOS Power FETs are designed for low voltage, high IRF532 100V |] 0.250 2A speed power switching applications such as switching regulators, IRF533 gov | 0259 2A converters, solenoid and relay drivers. : @ Silicon Gate for Fast Switching Speeds Rugged SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads D G TMOS Ss MAXIMUM RATINGS IRF Rating Symbol j 530 | 531 32 | 633 | Unit Drain-Source Voltage Voss | 100 | 60 | 100] 60 Vde Drain-Gate Voltage Vocr | 100} 60 | 100 | 60 Vde {Rag = 1.0 MQ) Gate-Source Voltage V6s +20 Vde Continuous Drain Current: Tc = 26C Ip 14] 14 | 12 | 12 | Ade noms: Continuous Drain Current Tc = 100C Ip 9.0 | 9.0 | 8.0 | 8.0 | Adc 5 DUJENSIONTNG AND TOLERANONS PER ANS Drain Current Pulsed Ipm | 36 | 56 | 48 | 48 | Ade AS ae MERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Total Power Po Watts Dissipation @ Tc = 25C 75 Derate above 26C 0.6 wrc Operating and Storage Ty.Tstg 55 to 160 c Temperature Range THERMAL CHARACTERISTICS Therma! Resistance CAW Junction to Case RaJc 1.67 Junction to Ambient Raa 62.5 Maximum Lead Temp. for Soldering TL 300 C Purposes, 1/8" from case for 5 seconds See the MTM12N10 Designer's Data Sheet for a complete set of design curves for this product. CASE 221A-04 TOQ-220AB MOTOROLA TMOS POWER MOSFET DATA 3-119 MOTOROLA SC XSTRS/R F iRF530-533/130-133 T7391 b3b7254 O089b46 | ELECTRICAL CHARACTERISTICS (Tc = 26C unless otherwise noted) LUE D | Characteristic | _symbot Typ | Mex | Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (Vgs = 0, Ip = 250 2A} IRF530,532 100 - _- IRF531,533 60 - - Zero Gate Voltage Drain Current \pss mAdc (Vgs = 0 V, Vos = Rated Vpss) - - 0.26 (Veg = OV, Vos = 0.8 Rated Vpss. Te = 125C) - _ 1.0 Forward Gate-Body Leakage Current IGSsF _ _ 100 nAdc (Vgs = 20V, Vos = 9) Reverse Gate-Body Leakage Current l@ssA _- - ~100 | nAdc (Veg = 20V, Vos = 0) ON CHARACTERISTICS Gate Threshold Voltage Vaesith) 2.0 _ 40 Vde (Vos = Ves. 'p = 260 2A) On-State Drain Current Ip(on) Adc (Vps = 25 V. Vas = 10 Vv) IRF 530,531 14 - - IRF 532,533 12 - _ Static Drain-Source On-Resistance roSton) Ohm (Vag = 10V, Ip = 8.0 A) IRF530,531 - _ 0.18 IRF532,633 - -_ 0.25 Forward Transconductance 9FS 4.0 _- - mhos (Vos = 15 V, Ip = 9.0 A) DYNAMIC CHARACTERISTICS Input Capacitance Ciss _ _- 800 pF Output Capacitance (Vps = 25V. Ves = 0, f = 1.0 MHz) Coss _ _ 500 Reverse Transfer Capact Crss = _- 150 SWITCHING CHARACTERISTICS* (Ty = 100C) Turn-On Delay Time td(on) _- ~ 30 ns Rise Time Vop = 36, Ip = 8.0A tr _ _- 78 Turn-Off Delay Time Zp = 182 tdloff) _ _ 40 Fall Time tf _ - 45 SOURCE DRAIN DIODE CHARACTERISTICS* Characteristic Symbol Typ Unit Forward On-Voltage Vsp 2.3 Vde . _ - Limited by stray Forward Turn-On Time {Ig = Rated Ip, Ves 0) ton inductance Reverse Recovery Time ter 360 ns INTERNAL PACKAGE INDUCTANCE (TO-220} Symbol Min Typ Max Unit {Internal Drain inductance La nH {Measured from the contact screw on tab to center of die) - 3.5 _- (Measured from the drain lead 0.25" from package to center of die) - 45 _ Internal Source Inductance Ls - 75 - (Measured from the source lead 0.25 from package to source bond pad.) *Puise Test: Pulse Width = 300 ps, Duty Cycle < 2.0 %. FIGURE 1 SWITCHING TEST cIRCUIT FIGURE 2 SWITCHING WAVEFORMS Yop et- ton RL 2 Vout tdion) > Put Vin DUT pote niiern Output, Vout __| ' Inverted | 90% { 50% 50% Input, Vj be- Pulse Width tL Pein 10% | MOTOROLA TMOS POWER MOSFET DATA 3-120