2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/ 800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Features: * Organized as 128K x16 / 256K x16 / 512K x16 * Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF200A/400A/800A - 2.7-3.6V for SST39VF200A/400A/800A * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption (typical values at 14 MHz) - Active Current: 9 mA (typical) - Standby Current: 3 A (typical) * Sector-Erase Capability - Uniform 2 KWord sectors * Block-Erase Capability - Uniform 32 KWord blocks * Fast Read Access Time - 55 ns for SST39LF200A/400A/800A - 70 ns for SST39VF200A/400A/800A * Latched Address and Data * Fast Erase and Word-Program - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Word-Program Time: 14 s (typical) - Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A * Automatic Write Timing - Internal VPP Generation * End-of-Write Detection - Toggle Bit - Data# Polling * CMOS I/O Compatibility * JEDEC Standard - Flash EEPROM Pinouts and command sets * Packages Available - 48-lead TSOP (12mm x 20mm) - 48-ball TFBGA (6mm x 8mm) - 48-ball WFBGA (4mm x 6mm) - 48-bump XFLGA (4mm x 6mm) - 4 and 8Mbit * All non-Pb (lead-free) devices are RoHS compliant (c)2011 Silicon Storage Technology, Inc. www.microchip.com DS25001A 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Product Description The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices provide a typical Word-Program time of 14 sec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39LF200A/400A/800A and SST39VF200A/400A/800A are offered in 48-lead TSOP packages and 48-ball TFBGA packages as well as Micro-Packages. See Figures 2, 3, and 4 for pin assignments. (c) 2011 Silicon Storage Technology, Inc. DS25001A 2 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Block Diagram X-Decoder Memory Address SuperFlash Memory Address Buffer Latches Y-Decoder CE# I/O Buffers and Data Latches Control Logic OE# WE# DQ15 - DQ0 1117 B1.2 Figure 1: Functional Block Diagram Pin Assignments 800A 400A SST39LF/VF200A A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# NC NC NC NC NC A17 A7 A6 A5 A4 A3 A2 A1 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# NC NC NC NC NC NC A7 A6 A5 A4 A3 A2 A1 SST39LF/VF200A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard Pinout Top View Die Up 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 400A 800A A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1117 48-tsop P01.3 Figure 2: Pin Assignments for 48-Lead TSOP (c) 2011 Silicon Storage Technology, Inc. DS25001A 3 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW (balls facing down) 6 5 A15 A16 NC DQ15 VSS A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 WE# NC NC NC DQ5 DQ12 VDD DQ4 NC NC NC NC DQ2 DQ10 DQ11 DQ3 A7 NC A6 A5 DQ0 DQ8 DQ9 DQ1 A3 A4 A2 A1 A0 CE# OE# VSS A B C D E 3 2 1 F G H TOP VIEW (balls facing down) TOP VIEW (balls facing down) SST39LF/VF800A SST39LF/VF400A 5 4 3 2 1 A13 A12 A14 A9 A8 WE# NC NC A7 NC A17 A10 NC NC A6 6 A15 A16 NC DQ15 VSS 5 A11 DQ7 DQ14 DQ13 DQ6 4 NC DQ5 DQ12 VDD DQ4 3 NC DQ2 DQ10 DQ11 DQ3 A5 1117 48-tfbga P02 4.0 6 DQ0 DQ8 DQ9 DQ1 A3 A4 A2 A1 A0 CE# OE# VSS A B C D E F G H 2 1 A13 A12 A14 A15 A16 NC DQ15 VSS A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 WE# NC NC NC DQ5 DQ12 VDD DQ4 NC NC A18 NC DQ2 DQ10 DQ11 DQ3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A3 A4 A2 A1 A0 CE# OE# VSS A B C D E F G 1117 48-tfbga P02 8.0 4 A13 A12 A14 1117 48-tfbga P02 2.0 SST39LF/VF200A H Figure 3: Pin Assignments for 48-Ball TFBGA (c) 2011 Silicon Storage Technology, Inc. DS25001A 4 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW (balls facing down) SST39VF200A 6 A2 A4 A6 NC A1 A3 A7 NC A0 A5 NC NC NC WE# NC A9 A11 NC A10 A13 A14 A8 A12 A15 5 4 3 DQ8 DQ10 VSS OE# DQ9 DQ4 DQ11 A16 NC NC DQ5 DQ6 DQ7 1 DQ0 DQ1 DQ2 DQ3 A B C D E VDD DQ12 DQ13 DQ14 DQ15 VSS F G H J K NC A9 A11 NC A10 A13 A14 A8 A12 A15 1117 48-xflga P03 2.0 CE# 2 L TOP VIEW (balls facing down) SST39LF/VF400A 6 A2 A4 A6 A17 A1 A3 A7 NC A0 A5 NC NC NC WE# 5 4 3 DQ8 DQ10 VSS OE# DQ9 DQ4 DQ11 A16 NC NC DQ5 DQ6 DQ7 1 DQ0 DQ1 DQ2 DQ3 A B C D E VDD DQ12 DQ13 DQ14 DQ15 VSS F G H J K NC A9 A11 NC A10 A13 A14 A8 A12 A15 1117 48-xflga P03 4.0 CE# 2 L TOP VIEW (balls facing down) SST39LF/VF800A 6 A2 A4 A6 A17 A1 A3 A7 NC A0 A5 A18 NC NC WE# 5 4 3 DQ8 DQ10 VSS OE# DQ9 DQ4 DQ11 A16 NC NC DQ5 DQ6 DQ7 1 DQ0 DQ1 DQ2 DQ3 A B C D E VDD DQ12 DQ13 DQ14 DQ15 VSS F G H J K 1117 48-xflga P03 8.0 CE# 2 L Figure 4: Pin Assignments for 48-Ball WFBGA and 48-Bump XFLGA (c) 2011 Silicon Storage Technology, Inc. DS25001A 5 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 1: Pin Description Symbol Pin Name Functions AMS1-A0 Address Inputs To provide memory addresses. During Sector-Erase AMS-A11 address lines will select the sector. During Block-Erase AMS-A15 address lines will select the block. DQ15-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. CE# Chip Enable To activate the device when CE# is low. OE# Output Enable To gate the data output buffers. WE# Write Enable To control the Write operations. VDD Power Supply To provide power supply voltage: VSS Ground NC No Connection 3.0-3.6V for SST39LF200A/400A/800A 2.7-3.6V for SST39VF200A/400A/800A Unconnected pins. T1.2 25001 1. AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A, and A18 for SST39LF/VF800A (c) 2011 Silicon Storage Technology, Inc. DS25001A 6 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the SST39LF200A/400A/800A and SST39VF200A/400A/800A is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 5). Word-Program Operation The SST39LF200A/400A/800A and SST39VF200A/400A/800A are programmed on a word-by-word basis. Before programming, the sector where the word exists must be fully erased. The Program operation is accomplished in three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load word address and word data. During the Word-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed within 20 s. See Figures 6 and 7 for WE# and CE# controlled Program operation timing diagrams and Figure 18 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands issued during the internal Program operation are ignored. Sector/Block-Erase Operation The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or block-by-block) basis. The SST39LF200A/400A/800A and SST39VF200A/400A/800A offers both Sector-Erase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 11 and 12 for timing waveforms. Any commands issued during the Sector- or Block-Erase operation are ignored. Chip-Erase Operation The SST39LF200A/400A/800A and SST39VF200A/400A/800A provide a Chip-Erase operation, which allows the user to erase the entire memory array to the "1" state. This is useful when the entire device must be quickly erased. (c) 2011 Silicon Storage Technology, Inc. DS25001A 7 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 21 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. Write Operation Status Detection The SST39LF200A/400A/800A and SST39VF200A/400A/800A provide two software means to detect the completion of a write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-ofWrite detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid. Data# Polling (DQ7) When the SST39LF200A/400A/800A and SST39VF200A/400A/800A are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 s. During internal Erase operation, any attempt to read DQ7 will produce a `0'. Once the internal Erase operation is completed, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-, Block- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Data# Polling timing diagram and Figure 19 for a flowchart. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-, Blockor Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 9 for Toggle Bit timing diagram and Figure 19 for a flowchart. Data Protection The SST39LF200A/400A/800A and SST39VF200A/400A/800A provide both hardware and software features to protect nonvolatile data from inadvertent writes. (c) 2011 Silicon Storage Technology, Inc. DS25001A 8 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Software Data Protection (SDP) The SST39LF200A/400A/800A and SST39VF200A/400A/800A provide the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte sequence. This group of devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. The contents of DQ15-DQ8 can be VIL or VIH, but no other value, during any SDP command sequence. Common Flash Memory Interface (CFI) The SST39LF200A/400A/800A and SST39VF200A/400A/800A also contain the CFI information to describe the characteristics of the device. In order to enter the CFI Query mode, the system must write three-byte sequence, same as Software ID Entry command with 98H (CFI Query command) to address 5555H in the last byte sequence. Once the device enters the CFI Query mode, the system can read CFI data at the addresses given in Tables 5 through 9. The system must write the CFI Exit command to return to Read mode from the CFI Query mode. Product Identification The Product Identification mode identifies the devices as the SST39LF/VF200A, SST39LF/VF400A and SST39LF/VF800A and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 13 for the Software ID Entry and Read timing diagram, and Figure 20 for the Software ID Entry command sequence flowchart. Table 2: Product Identification Address Data 0000H 00BFH SST39LF/VF200A 0001H 2789H SST39LF/VF400A 0001H 2780H SST39LF/VF800A 0001H 2781H Manufacturer's ID Device ID T2.3 25001 (c) 2011 Silicon Storage Technology, Inc. DS25001A 9 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Product Identification Mode Exit/CFI Mode Exit In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read mode. This command may also be used to reset the device to the Read mode after any inadvertent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. Please note that the Software ID Exit/CFI Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 15 for timing waveform, and Figure 20 for a flowchart. Operations Table 3: Operation Modes Selection Mode CE# OE# WE# DQ Address Read VIL VIL VIH DOUT AIN Program VIL VIH VIL DIN AIN Erase VIL VIH VIL X1 Sector or Block address, XXH for Chip-Erase Standby VIH X X High Z X X VIL X High Z/ DOUT X X X VIH High Z/ DOUT X VIL VIL VIH Write Inhibit Product Identification Software Mode See Table 4 T3.4 25001 1. X can be VIL or VIH, but no other value. Table 4: Software Command Sequence Command Sequence 1st Bus Write Cycle Addr Data 1 2 2nd Bus Write Cycle 3rd Bus Write Cycle 4th Bus Write Cycle Data Addr Data Addr Data Addr1 2 1 2 1 2 5th Bus Write Cycle 6th Bus Write Cycle Data Addr Data Addr1 2 1 2 Word-Program 5555H AAH 2AAAH 55H 5555H A0H WA3 Data Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX4 30H Block-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H BAX4 50H Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H Software ID Entry5,6 5555H AAH 2AAAH 55H 5555H 90H CFI Query Entry5 5555H AAH 2AAAH 55H 5555H 98H 2AAAH 55H 5555H F0H Software ID Exit7/ CFI Exit XXH F0H Software ID Exit7/ 5555H AAH CFI Exit T4.3 25001 1. Address format A14-A0 (Hex), Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence. AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A, and A18 for SST39LF/VF800A 2. DQ15-DQ8 can be VIL or VIH, but no other value, for the Command sequence 3. WA = Program word address (c) 2011 Silicon Storage Technology, Inc. DS25001A 10 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet 4. SAX for Sector-Erase; uses AMS-A11 address lines BAX for Block-Erase; uses AMS-A15 address lines 5. The device does not remain in Software Product ID mode if powered down. SST Manufacturer's ID = 00BFH, is read with A0 = 0, 6. With AMS-A1 = 0; SST39LF/VF200A Device ID = 2789H, is read with A0 = 1. SST39LF/VF400A Device ID = 2780H, is read with A0 = 1. SST39LF/VF800A Device ID = 2781H, is read with A0 = 1. 7. Both Software ID Exit operations are equivalent Table 5: CFI Query Identification String1 for SST39LF200A/400A/800A and SST39VF200A/400A/800A Address 10H 11H 12H 13H 14H 15H 16H 17H 18H 19H 1AH Data 0051H 0052H 0059H 0001H 0007H 0000H 0000H 0000H 0000H 0000H 0000H Data Query Unique ASCII string "QRY" Primary OEM command set Address for Primary Extended Table Alternate OEM command set (00H = none exists) Address for Alternate OEM extended Table (00H = none exits) T5.0 25001 1. Refer to CFI publication 100 for more details. Table 6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/ 400A/800A Address Data 1BH 0027H1 Data VDD Min (Program/Erase) 0030H1 DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min (00H = no VPP pin) 1EH 0000H VPP max (00H = no VPP pin) 1FH 0004H Typical time out for Word-Program 2N s (24 = 16 s) 20H 0000H Typical time out for min size buffer program 2N s (00H = not supported) 21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 24 = 32 s) 24H 0000H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms) T6.2 25001 1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A (c) 2011 Silicon Storage Technology, Inc. DS25001A 11 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 7: Device Geometry Information for SST39LF/VF200A Address 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 31H 32H 33H 34H Data 0012H 0001H 0000H 0000H Data Device size = 2N Byte (12H = 18; 218 = 256 KByte) Flash Device Interface description; 0001H = x16-only asynchronous interface 0002H 003FH 0000H 0010H 0000H 0003H 0000H 0000H 0001H Number of Erase Sector/Block sizes supported by device Sector Information (y + 1 = Number of sectors; z x 256B = sector size) y = 63 + 1 = 64 sectors (003FH = 63) Maximum number of bytes in multi-byte write = 2N (00H = not supported) z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) Block Information (y + 1 = Number of blocks; z x 256B = block size) y = 3 + 1 = 4 blocks (0003H = 3) z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T7.2 25001 Table 8: Device Geometry Information for SST39LF/VF400A Address 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 31H 32H 33H 34H Data 0013H 0001H 0000H 0000H 0000H 0002H 007FH 0000H 0010H 0000H 0007H 0000H 0000H 0001H Data Device size = 2N Byte (13H = 19; 219 = 512 KByte) Flash Device Interface description; 0001H = x16-only asynchronous interface Maximum number of bytes in multi-byte write = 2N (00H = not supported) Number of Erase Sector/Block sizes supported by device Sector Information (y + 1 = Number of sectors; z x 256B = sector size) y = 127 + 1 = 128 sectors (007FH = 127) z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) Block Information (y + 1 = Number of blocks; z x 256B = block size) y = 7 + 1 = 8 blocks (0007H = 7) z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T8.1 25001 (c) 2011 Silicon Storage Technology, Inc. DS25001A 12 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 9: Device Geometry Information for SST39LF/VF800A Address 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 31H 32H 33H 34H Data 0014H 0001H 0000H 0000H 0000H 0002H 00FFH 0000H 0010H 0000H 000FH 0000H 0000H 0001H Data Device size = 2N Bytes (14H = 20; 220 = 1 MByte) Flash Device Interface description; 0001H = x16-only asynchronous interface Maximum number of bytes in multi-byte write = 2N (00H = not supported) Number of Erase Sector/Block sizes supported by device Sector Information (y + 1 = Number of sectors; z x 256B = sector size) y = 255 + 1 = 256 sectors (00FFH = 255) z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) Block Information (y + 1 = Number of blocks; z x 256B = block size) y = 15 + 1 = 16 blocks (000FH = 15) z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T9.0 25001 (c) 2011 Silicon Storage Technology, Inc. DS25001A 13 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Excluding certain with-Pb 32-PLCC units, all packages are 260C capable in both non-Pb and with-Pb solder versions. Certain with-Pb 32-PLCC package types are capable of 240C for 10 seconds; please consult the factory for the latest information. 2. Outputs shorted for no more than one second. No more than one output shorted at a time. Operating Range: SST39LF200A/400A/800A Range Commercial Ambient Temp VDD 0C to +70C 3.0-3.6V T9.1 25001 Operating Range: SST39VF200A/400A/800A Range Ambient Temp Commercial Industrial VDD 0C to +70C 2.7-3.6V -40C to +85C 2.7-3.6V T9.1 25001 Table 10:AC Conditions of Test1 Input Rise/Fall Time Output Load SST39LF200A/400A/800A Output Load SST39VF200A/400A/800A 5ns CL = 30 pF CL = 100 pF T10.1 25001 1. See Figures 16 and 17 (c) 2011 Silicon Storage Technology, Inc. DS25001A 14 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 11:DC Operating Characteristics -VDD = 3.0-3.6V for SST39LF200A/400A/800A and 2.7-3.6V for SST39VF200A/400A/800A1 Limits Symbol Parameter Min Max Units Power Supply Current IDD Test Conditions Address input=VILT/VIHT, at f=1/TRC Min, VDD=VDD Max Read2 30 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 30 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 20 A CE#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 A VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 A VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage VIH Input High Voltage 0.7VDD V VDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 VOL Output Low Voltage VOH Output High Voltage 0.8 0.2 VDD-0.2 VDD=VDD Min V VDD=VDD Max V IOL=100 A, VDD=VDD Min V IOH=-100 A, VDD=VDD Min T11.7 25001 1. Typical conditions for the Active Current shown on page 1 are average values at 25C (room temperature), and VDD = 3V for VF devices. Not 100% tested. 2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information. Table 12:Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 Power-up to Read Operation 100 s TPU-WRITE1 Power-up to Program/Erase Operation 100 s T12.0 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 13:Capacitance (TA = 25C, f=1 Mhz, other pins open) Parameter Description CI/O1 1 CIN Test Condition Maximum I/O Pin Capacitance VI/O = 0V 12 pF Input Capacitance VIN = 0V 6 pF T13.0 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 14:Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1,2 Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T14.2 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. (c) 2011 Silicon Storage Technology, Inc. DS25001A 15 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet AC Characteristics Table 15:Read Cycle Timing Parameters VDD = 3.0-3.6V SST39LF200A/400A/800A55 Symbol Parameter TRC Read Cycle Time TCE Chip Enable Access Time 55 ns TAA Address Access Time 55 ns TOE Output Enable Access Time 30 ns TCLZ1 CE# Low to Active Output 0 1 OE# Low to Active Output 0 TOLZ TCHZ1 CE# High to High-Z Output 1 OE# High to High-Z Output TOHZ TOH1 Min Max Units 55 ns ns ns 15 ns 15 Output Hold from Address Change ns 0 ns T15.7 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 16:Read Cycle Timing Parameters VDD = 2.7-3.6V SST39VF200A/400A/800A70 Min Symbol Parameter Max Unit s TRC Read Cycle Time TCE Chip Enable Access Time 70 ns TAA Address Access Time 70 ns TOE Output Enable Access Time TCLZ1 CE# Low to Active Output 0 TOLZ1 OE# Low to Active Output 0 TCHZ1 CE# High to High-Z Output 1 OE# High to High-Z Output TOHZ TOH1 70 ns 35 ns ns ns 20 ns 20 Output Hold from Address Change ns 0 ns T16.7 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (c) 2011 Silicon Storage Technology, Inc. DS25001A 16 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 17:Program/Erase Cycle Timing Parameters Symbol Parameter Min Max Units 20 s TBP Word-Program Time TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH1 WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time TSE Sector-Erase TBE Block-Erase 25 ms TSCE Chip-Erase 100 ms 150 ns 25 ms T17.0 25001 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (c) 2011 Silicon Storage Technology, Inc. DS25001A 17 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TRC TAA ADDRESS AMS-0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# TCLZ HIGH-Z DQ15-0 Note: TCHZ TOH DATA VALID HIGH-Z DATA VALID AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A 1117 F03.2 Figure 5: Read Cycle Timing Diagram INTERNAL PROGRAM OPERATION STARTS TBP 5555 ADDRESS AMS-0 2AAA 5555 ADDR TAH TDH TWP WE# TAS TDS TWPH OE# TCH CE# TCS DQ15-0 Note: XXAA XX55 XXA0 DATA SW0 SW1 SW2 WORD (ADDR/DATA) AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A X can be VIL or VIH, but no other value. 1117 F04.4 Figure 6: WE# Controlled Program Cycle Timing Diagram (c) 2011 Silicon Storage Technology, Inc. DS25001A 18 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet INTERNAL PROGRAM OPERATION STARTS TBP 5555 ADDRESS AMS-0 2AAA 5555 ADDR TAH TDH TCP CE# TAS TCPH TDS OE# TCH WE# TCS DQ15-0 Note: XXAA XX55 XXA0 DATA SW0 SW1 SW2 WORD (ADDR/DATA) AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A X can be VIL or VIH, but no other value. 1117 F05.4 Figure 7: CE# Controlled Program Cycle Timing Diagram ADDRESS AMS-0 TCE CE# TOEH TOES OE# TOE WE# DQ7 Note: DATA DATA# DATA# DATA AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A 1117 F06.3 Figure 8: Data# Polling Timing Diagram (c) 2011 Silicon Storage Technology, Inc. DS25001A 19 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet ADDRESS AMS-0 TCE CE# TOEH TOE TOES OE# WE# DQ6 TWO READ CYCLES WITH SAME OUTPUTS Note: AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A 1117 F07.3 Figure 9: Toggle Bit Timing Diagram TSCE SIX-BYTE CODE FOR CHIP-ERASE ADDRESS AMS-0 5555 2AAA 5555 5555 2AAA 5555 CE# OE# TWP WE# DQ15-0 XXAA SW0 XX55 SW1 XX80 SW2 XXAA SW3 XX55 SW4 XX10 SW5 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 16) AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A X can be VIL or VIH, but no other value. 1117 F08.7 Figure 10:WE# Controlled Chip-Erase Timing Diagram (c) 2011 Silicon Storage Technology, Inc. DS25001A 20 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TBE SIX-BYTE CODE FOR BLOCK-ERASE ADDRESS AMS-0 5555 2AAA 5555 5555 2AAA BAX CE# OE# TWP WE# DQ15-0 XXAA XX55 XX80 XXAA XX55 XX50 SW0 SW1 SW2 SW3 SW4 SW5 Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 16) BAX = Block Address AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A X can be VIL or VIH, but no other value. 1117 F17.9 Figure 11:WE# Controlled Block-Erase Timing Diagram TSE SIX-BYTE CODE FOR SECTOR-ERASE ADDRESS AMS-0 5555 2AAA 5555 5555 2AAA SAX CE# OE# TWP WE# DQ15-0 XXAA XX55 XX80 XXAA XX55 XX30 SW0 SW1 SW2 SW3 SW4 SW5 Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 16) SAX = Sector Address AMS = Most significant address AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A X can be VIL or VIH, but no other value. 1117 F18.8 Figure 12:WE# Controlled Sector-Erase Timing Diagram (c) 2011 Silicon Storage Technology, Inc. DS25001A 21 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A14-0 5555 2AAA 5555 0000 0001 CE# OE# TWP TIDA WE# TWPH DQ15-0 XXAA SW0 XX55 SW1 TAA XX90 SW2 00BF Device ID Device ID = 2789H for SST39LF/VF200A, 2780H for SST39LF/VF400A and 2781H for SST39LF/VF800A Note: X can be VIL or VIH, but no other value. 1117 F09.4 Figure 13:Software ID Entry and Read THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A14-0 5555 2AAA 5555 CE# OE# TIDA TWP WE# TAA TWPH DQ15-0 XXAA SW0 XX55 SW1 XX98 SW2 Note: X can be VIL or VIH, but no other value. 1117 F20.1 Figure 14:CFI Query Entry and Read (c) 2011 Silicon Storage Technology, Inc. DS25001A 22 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A14-0 DQ15-0 5555 2AAA XXAA 5555 XX55 XXF0 TIDA CE# OE# TWP TWHP WE# SW0 Note: SW1 SW2 X can be VIL or VIH, but no other value. 1117 F10.1 Figure 15:Software ID Exit/CFI Exit (c) 2011 Silicon Storage Technology, Inc. DS25001A 23 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 1117 F11.1 AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <5 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test Figure 16:AC Input/Output Reference Waveforms TO TESTER TO DUT CL 1117 F12.1 Figure 17:A Test Load Example (c) 2011 Silicon Storage Technology, Inc. DS25001A 24 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XXA0H Address: 5555H Load Word Address/Word Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed Note: X can be VIL or VIH, but no other value. 1117 F13.4 Figure 18:Word-Program Algorithm (c) 2011 Silicon Storage Technology, Inc. DS25001A 25 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Internal Timer Toggle Bit Data# Polling Program/Erase Initiated Program/Erase Initiated Program/Erase Initiated Wait TBP, TSCE, TSE or TBE Read word Read DQ7 Read same word Program/Erase Completed No Is DQ7 = true data Yes No Does DQ6 match Program/Erase Completed Yes Program/Erase Completed 1117 F14.0 Figure 19:Wait Options (c) 2011 Silicon Storage Technology, Inc. DS25001A 26 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet CFI Query Entry Command Sequence Software ID Entry Command Sequence Software ID Exit/CFI Exit Command Sequence Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXF0H Address: XXH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Wait TIDA Load data: XX98H Address: 5555H Load data: XX90H Address: 5555H Load data: XXF0H Address: 5555H Return to normal operation Wait TIDA Wait TIDA Wait TIDA Read CFI data Read Software ID Return to normal operation 1117 F15.4 Note: X can be VIL or VIH, but no other value. Figure 20:Software ID/CFI Command Flowcharts (c) 2011 Silicon Storage Technology, Inc. DS25001A 27 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Chip-Erase Command Sequence Sector-Erase Command Sequence Block-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX10H Address: 5555H Load data: XX30H Address: SAX Load data: XX50H Address: BAX Wait TSCE Wait TSE Wait TBE Chip erased to FFFFH Sector erased to FFFFH Block erased to FFFFH Note: X can be VIL or VIH, but no other value. 1117 F16.5 Figure 21:Erase Command Sequence (c) 2011 Silicon Storage Technology, Inc. DS25001A 28 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Product Ordering Information SST 39 VF XX XX 200A XXXX - 70 XX - 4C XX - B3KE XXXX Environmental Attribute E1 = non-Pb Package Modifier K = 48 leads or balls Q = 48 balls or bumps (66 possible positions) Package Type B3 = TFBGA (0.8mm pitch, 6mm x 8mm) C1 = XFLGA (0.5mm pitch, 4mm x 6mm) E = TSOP (type 1, die up, 12mm x 20mm) M1 = WFBGA (0.5mm pitch, 4mm x 6mm) MA = WFBGA (0.5mm pitch, 4mm x 6mm) Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Read Access Speed 55 = 55 ns 70 = 70 ns Version A = Special Feature Version Device Density 800 = 8 Mbit 400 = 4 Mbit 200 = 2 Mbit Voltage L = 3.0-3.6V V = 2.7-3.6V Product Series 39 = Multi-Purpose Flash 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". (c) 2011 Silicon Storage Technology, Inc. DS25001A 29 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Valid combinations for SST39LF200A SST39LF200A-55-4C-EKE SST39LF200A-55-4C-B3KE Valid combinations for SST39VF200A SST39VF200A-70-4C-EKE SST39VF200A-70-4C-MAQE SST39VF200A-70-4I-EKE SST39VF200A-70-4I-MAQE SST39VF200A-70-4C-B3KE SST39VF200A-70-4C-M1QE SST39VF200A-70-4I-B3KE SST39VF200A-70-4I-M1QE Valid combinations for SST39LF400A SST39LF400A-55-4C-EKE SST39LF400A-55-4C-B3KE SST39LF400A-55-4C-MAQE Valid combinations for SST39VF400A SST39VF400A-70-4C-EKE ST39VF400A-70-4C-M1QE SST39VF400A-70-4I-EKE SST39VF400A-70-4I-M1QE SST39VF400A-70-4C-B3KE SST39VF400A-70-4C-MAQE SST39VF400A-70-4I-B3KE SST39VF400A-70-4I-MAQE SST39VF400A-70-4C-C1QE SST39VF400A-70-4I-C1QE Valid combinations for SST39LF800A SST39LF800A-55-4C-EKE SST39LF800A-55-4C-B3KE SST39LF800A-55-4C-MAQE Valid combinations for SST39VF800A SST39VF800A-70-4C-EKE SST39VF800A-70-4C-M1QE SST39VF800A-70-4I-EKE SST39VF800A-70-4I-M1QE SST39VF800A-70-4C-B3KE SST39VF800A-70-4C-MAQE SST39VF800A-70-4I-B3KE SST39VF800A-70-4I-MAQE SST39VF800A-70-4C-C1QE SST39VF800A-70-4I-C1QE Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c) 2011 Silicon Storage Technology, Inc. DS25001A 30 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Packaging Diagrams 1.05 0.95 Pin # 1 Identifier 0.50 BSC 0.27 0.17 12.20 11.80 0.15 0.05 18.50 18.30 DETAIL 1.20 max. 0.70 0.50 20.20 19.80 0- 5 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 1mm 3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. 0.70 0.50 48-tsop-EK-8 Figure 22:48-Lead Thin Small Outline Package (TSOP) 12mm x 20mm SST Package Code: EK (c) 2011 Silicon Storage Technology, Inc. DS25001A 31 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW BOTTOM VIEW 5.60 8.00 0.10 0.45 0.05 (48X) 0.80 6 6 5 5 4.00 4 4 6.00 0.10 3 3 2 2 1 1 0.80 A B C D E F G H A1 CORNER SIDE VIEW H G F E D C B A A1 CORNER 1.10 0.10 0.12 SEATING PLANE 1mm 0.35 0.05 Note: 1. Complies with JEDEC Publication 95, MO-210, variant AB-1 , although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.12 mm 4. Ball opening size is 0.38 mm ( 0.05 mm) 48-tfbga-B3K-6x8-450mic-5 Figure 23:48-Ball Thin-Profile, Fine-pitch Ball Grid Array (TFBGA) 6mm x 8mm SST Package Code: B3K (c) 2011 Silicon Storage Technology, Inc. DS25001A 32 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW BOTTOM VIEW 6.00 0.08 5.00 0.32 0.05 (48X) 0.50 6 5 4 3 2 1 4.00 0.08 6 5 4 3 2 1 2.50 0.50 A B C D E F G H J K L L K J H G F E D C B A A1 INDICATOR4 A1 CORNER 0.63 0.10 DETAIL SIDE VIEW 0.08 SEATING PLANE 0.20 0. 06 Note: 1. 2. 3. 4. 5. 1mm Complies with JEDEC Publication 95, MO-207, Variant C2B-4, dimensions except nominal ball width is larger. All linear dimensions are in millimeters. Coplanarity: 0.08 mm. No ball is present in position A1; a gold-colored indicator is present. Ball opening size is 0.29 mm ( 0.05 mm). 48-wfbga-M1Q-4x6-32mic-6.0 Figure 24:48-Ball Very-Very-Thin-Profile, Fine-Pitch Ball Grid Array (WFBGA) 4mm x 6mm SST Package Code: M1Q (c) 2011 Silicon Storage Technology, Inc. DS25001A 33 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW BOTTOM VIEW 5.00 6.00 0.08 6 5 4 3 2 1 0.50 4.00 0.08 0.50 A1 CORNER DETAIL 6 5 4 3 2 1 2.50 A B C D E F G H J K L 0.32 0.05 (48X) L K J H G F E D C B A A1 INDICATOR 0.73 max. 0.636 nom. SIDE VIEW 0.08 SEATING PLANE 0.20 0.06 Note: 1mm 1. Complies with JEDEC Publication 95, MO-207, Variant CB-4 except nominal ball size is larger and bottom side A1 indicator is triangle at corner. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.08 mm 4. Ball opening size is 0.29 mm ( 0.05 mm) 48-wfbga-MAQ-4x6-32mic-2.0 Figure 25:48-Ball Very-Very-Thin-Profile, Fine-Pitch Ball Grid Array (WFBGA) 4mm x 6mm SST Package Code: MAQ (c) 2011 Silicon Storage Technology, Inc. DS25001A 34 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet TOP VIEW BOTTOM VIEW 6.00 0.08 5.00 0.29 0.05 (48X) 0.50 6 5 4 3 2 1 4.00 0.08 2.50 0.50 A B C D E F G H J K L A1 CORNER DETAIL 6 5 4 3 2 1 L K J H G F E D C B A A1 INDICATOR 0.52 max. 0.473 nom. 4 SIDE VIEW 0.05 SEATING PLANE 0.04 +0.025/-0.015 Note: 1. 2. 3. 4. 5. 1mm Complies with JEDEC Publication 95, MO-207, variant CZB-4, dimensions except bump height is much less. All linear dimensions are in millimeters. Coplanarity: 0.05 mm. No ball is present at A1; a gold-colored indicator is present. Bump opening size is 0.29 ( 0.05 mm). 48-xflga-C1Q-4x6-29mic-6.0 Figure 26: 48-Bump Extremely-Thin-Profile, Fine-Pitch Land Grid Array (XFLGA) 4mm x 6mm SST Package Code: C1Q (c) 2011 Silicon Storage Technology, Inc. DS25001A 35 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A A Microchip Technology Company Data Sheet Table 18:Revision History Revision 04 05 Description * * * * * 06 * 07 * * * * * * 08 * 09 * 11 * * * * 12 * 13 * * * * * 10 A Date 2002 Data Book Added footnotes for MPF power usage and Typical conditions to Table 11 on page 15 Clarified the Test Conditions for Power Supply Current and Read parameters in Table 11 on page 15 Part number changes - see page 30 for additional information New Micro-Package part numbers added for SST39VF400A and SST39VF800A New Micro-Package part numbers added for SST39VF400A / 800A (see page 30) 2004 Data Book Updated the B3K, M1Q, and C1Q package diagrams Added non-Pb MPNs and removed footnote (see page 30) Added M1Q/M1QE MPNs for the SSTVF200A device on page 30 Removed 90ns MPNs and footnote for the SSTVFx00A devices on page 30 Added RoHS compliance information on page 1 and in the "Product Ordering Information" on page 29 Clarified the solder temperature profile under "Absolute Maximum Stress Ratings" on page 14. Removed valid combinations SST39LF400A-45-4C-EK, SST39LF400A-454C-B3K, SST39LF400A-45-4C-EKE, and SST39LF400A-45-4C-B3KE due to EOL Applied new format styles. Add Y1QE package Removed all pb parts EOL of all Y1QE parts. Replacement parts are M1QE parts in this document. EOL of SST39LF200A-45-4C-EKE and SST39LF200A-45-4C-B3KE. See S71117(12). Replacement parts are SST39LF200A-55-4C-EKE and SST39LF200A-55-4C-B3KE found in this document. Added MAQE package information Applied new document format Released document under letter revision system. Updated Spec number from S71117 to DS25001. Updated TIDA value in Table 17 on page 17 from max 150 ns to min 150 ns. (c) 2011 Silicon Storage Technology, Inc. May 2002 Mar 2003 Oct 2003 Nov 2003 Apr 2005 Feb 2007 Aug 2007 Dec 2009 Apr 2010 Nov 2010 Mar 2011 DS25001A 36 03/11 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet ISBN:978-1-61341-026-4 (c) 2011 Silicon Storage Technology, Inc-a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office(s) location and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com (c) 2011 Silicon Storage Technology, Inc. DS25001A 37 03/11