IPD90N10S4L-06
OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C, VGS=10V 90 A
TC=100°C, VGS=10V1) 69
Pulsed drain current2) ID,pulse TC=25°C 360
Avalanche energy, single pulse2) EAS ID=45A 250 mJ
Avalanche current, single pulse IAS -70 A
Gate source voltage VGS - +/-16 V
Power dissipation Ptot TC=25°C 136 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 100
V
RDS(on),max 6.6 mW
ID90 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD90N10S4L-06 PG-TO252-3-313 4N10L06
1
3
TAB
Rev. 1.0 page 1 2011-11-30
IPD90N10S4L-06
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - 1.1 K/W
Thermal resistance, junction -
ambient, leaded RthJA - - 62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= 1mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=90µA 1.1 1.6 2.1
Zero gate voltage drain current IDSS VDS=100V, VGS=0V - 0.01 1 µA
VDS=100V, VGS=0V,
Tj=125°C2) - 1 100
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5V, ID=45A - 6.9 8.1 mW
VGS=10 V, ID=90 A - 5.8 6.6
Values
Rev. 1.0 page 2 2011-11-30
IPD90N10S4L-06
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 4804 6250 pF
Output capacitance Coss - 1620 2110
Reverse transfer capacitance Crss - 147 300
Turn-on delay time td(on) - 8 - ns
Rise time tr- 6 -
Turn-off delay time td(off) - 42 -
Fall time tf- 40 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 16 21 nC
Gate to drain charge Qgd - 17 34
Gate charge total Qg- 75 98
Gate plateau voltage Vplateau - 3.4 - V
Reverse Diode
Diode continous forward current2) IS- - 90 A
Diode pulse current2) IS,pulse - - 360
Diode forward voltage VSD VGS=0V, IF=90A,
Tj=25°C - 1.0 1.3 V
Reverse recovery time2) trr VR=50V, IF=50A,
diF/dt=100A/µs - 60 - ns
Reverse recovery charge2) Qrr - 100 - nC
TC=25°C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=50V, VGS=10V,
ID=90A, RG=3.5W
VDD=80V, ID=90A,
VGS=0 to 10V
1) Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry 98A at 25°C.
Rev. 1.0 page 3 2011-11-30
IPD90N10S4L-06
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID= f(TC); VGS ≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
0.1
1
10
100
1000
0.1 1 10 100
VDS [V]
ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
ID[A]
Rev. 1.0 page 4 2011-11-30
IPD90N10S4L-06
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 90 A; VGS = 10 V
parameter: Tj
2
4
6
8
10
12
14
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
3.5 V
4 V
4.5 V
5 V
10 V
0
40
80
120
160
200
240
280
320
360
01234
VDS [V]
ID[A]
3.5 V 4 V 4.5 V
5 V
10 V
3
5
7
9
11
13
15
0 90 180 270 360
ID[A]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
90
180
270
360
1 2 3 4 5
VGS [V]
ID[A]
Rev. 1.0 page 5 2011-11-30
IPD90N10S4L-06
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
90 µA
900 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C[pF]
101
25 °C
100 °C
150 °C
1
10
100
0.1 1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
Rev. 1.0 page 6 2011-11-30
IPD90N10S4L-06
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj); ID= 45A VBR(DSS) = f(Tj); ID= 1 mA
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID= 90 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
94
96
98
100
102
104
106
108
110
-55 -15 25 65 105 145
Tj[°C]
VBR(DSS) [V]
80 V
20 V
0
2
4
6
8
10
0 20 40 60 80
Qgate [nC]
VGS [V]
0
50
100
150
200
250
300
25 75 125 175
Tj[°C]
EAS [mJ]
Rev. 1.0 page 7 2011-11-30
IPD90N10S4L-06
Published by
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2011-11-30
IPD90N10S4L-06
Revision History
Version
Revision 1.0
Date
29.11.2011
Changes
Final Data Sheet
Rev. 1.0 page 9 2011-11-30