MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB Siliconix RF623 RF622 F221 = IRF222 = IRF223 F624 = iR | IR ir IRF220 IRF620 IRFO IRF220 = IRF224 IRF222 IRF223 Ss IRF620 = IRF621 IRF622 IRF623 Siliconix Advanced Informati 200V; -Channel Enhancement Mode non These power FETs are designed especially for switching regulators, power converters, solenoid drivers and relay drivers. FEATURES Product Summary = No Second Breakdown Never | BYoss | Rosiom | tp | Package w High Input Impedance IRF 220 200V a Internal Drain-Source Diode IRF221 150V 0.892 5.08 ws Very Rugged: Excellent SOA IAF202 200v TO-3 a Extremely Fast Switching IRF223 450V 1.20 4.04 IRF620 200V BENEFITS 082 | 5.0A IRF621 150V 22048 w Reduced Component Count iareo2 | 200v wma | aoa To = Improved Performance TRFe23 Ts0V s Simpler Designs a Improved Reliability | ool s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage . IRF220,222,620,622 .....ccceceeccseees 200 Gate Current (Peak) .......... cee eee ee eee + 2A IRF221,223,621,623 ..........ccceeeeeee 150V Gate Source Voltage ............ cece eee + 40V Drain-Gate Voltage . Total Power Dissipation ................56. 40w IRF220,222,620,622 ..........cce eee eeee 200V Linear Derating Factor .......... 2+. 0.32W/C IRF221,223,621,623 ...... ccc cece cece eee 150V Storage and Junction Drain Current Continuous! Temperature .............06. -55C to +150C IRF220,221,620,621 ........... eee eee + 5.0A Notes: IRF222,223,622,623 ......-..-2-eeeeee + 4.0A 1. Limited by package dissipation. PUISED?. 06... cece ccc cecen esses eeaaeeeees +20A 2. Pulse test 80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS 5 mac L_MAX |_| Y 0.043 11.092) F pase SEATING 0.638 (0.965) MIN {+ $98 ae PLANE 4.197 ar pati! 408 m \ 0.675 (17.145) 1177 (28.896) La ae (6.35) 0.655 76.637) dA ESN (in 1 ; 8 vaso 111.1765 Y fry | 2 \ ae foe | (+ 2 0420 770.668) Ww wi | 1 TE oN ae om aie 0208 16.207) aor com view he RMAX J- 821420) PIN 1 Gate PIN 1 Gate PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source TO-3 TO-220AB 2-10 Siliconix ELECTRICAL CHARACTERISTICS (Te =25C unless otherwise noted). Symbol | Parameter | Part Number] :Min | . Typ | Max Unit | : Test Conditions | Static IRF 220, 222-6 po BV, Drain-Source Breakdown IRF 620, 622 a Vv 1'Vgg <9, Ip= 250A pss IRF 221, 223 Jf Sope mos IRF 621, 623 Vestn) | Gate Threshold Voitage ANY 2 4 V_ | Ves=Vos; Ip=1mA lass Gate Body Leakage _ All +100 nA | Ves= + 20V, Vos =0 loss Zero Gate Voltage Drain Alt , Ot | 026 | mA Vos= Rated Vos Vas=0 Current = i 02 7 1.0 Vps = Rated Vps, Vas =9, To = 125C IRF 220, 221 / tpsion) | Drain-Source On IRF 620, 621 ot 8s @ |. Vag= 10V, Ip = 2.5A (Note 1) Resistance IRF 222, 223 3 | 42 , : IRF 622, 623 0. IDion) On-State Drain Current , All 5 A | Vps=25V, Vas = 10V (Note 1) : Dynamic Ofs Forward Transconductance All 1,3 2.3 S | Vpg=25V, Ip = 2.5A (Note 1) Ciss Input Capacitance Ail 450 | 600 Reverse Transfer Crss Capacitance All 40 | 80 | oF | Vag=0, Vpg = 25V, f= 1 MHz Common-Source Output Coss Capacitance All 160 300 tafon) Turn-On Delay Time All 40 tr Rise Time | All 80 | og | VoD =75V, Ip=2.5A, R, = 309, Ry =259, taoff) Turn-Off Delay Time | All 100 (Figure 1) te Fall Time " All 60 Drain-Source Diode Characteristics Vsp Forward ON Voltage. . AH -1.57 V_ | Igs=~-5A, Veg =0 (Note 1) 3 . Ip =-5A, Veg = 0, di/dt = 100A/, ter Reverse Recovery Time All 450 ns. (Figure 2) Ss us Note 1: Pulse Test 80ys to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 1 Switching Test Circuit Vin Yoo | ~ 1 | | Agen | O Vout ae | | 20v T! | +t: | | | | siReurr = { PULSE UNDER . [generator] [TEST | PW. = 1 ps Cg <50 pF DUTY CYCLE =1% FIGURE 2 Reverse Recovery Test Circuit v 500 di/dt Adjust (1- 27uH) At 5 To 50uF IN6093 RS PK yAdjust 4 N ho 9 24011 rr + 2 iNa001 40000 F = q . 3 R< 0.250 LS 0.0%uH if rs AA. Tw VVVv WNA723 2N4204 SCOPE FROM TRIGGER CKT ; Siliconix c9ddl = co9Aal = bC9AMl = 079A ccdal = Cocdal = =bCcdal = OCCA