ON Semiconductor JFET VHF Amplifier MPF102 N-Channel - Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc Gate-Source Voltage VGS -25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ 125 C Storage Temperature Range Tstg -65 to +150 C 1 2 CASE 29-11, STYLE 5 TO-92 (TO-226AA) 1 DRAIN 3 GATE 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic 3 Symbol Min Max Unit V(BR)GSS -25 - Vdc - - -2.0 -2.0 nAdc Adc OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) IGSS Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) - -8.0 Vdc Gate-Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) VGS -0.5 -7.5 Vdc IDSS 2.0 20 mAdc 2000 1600 7500 - ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) - 800 mhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) - 200 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss - 3.0 pF mhos 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Publication Order Number: MPF102/D MPF102 COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 0.01 500 700 1000 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 MPF102 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 100 340 400 300 0.8 60 ID = IDSS 0.6 800 310 50 10 0 350 340 330 0.4 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 90 900 150 160 170 180 190 200 210 150 160 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 900 700 600 500 0.4 800 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 170 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 3 200 210 MPF102 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 500 700 1000 bog @ IDSS, 0.25 IDSS gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 MPF102 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 16. S22g http://onsemi.com 5 310 200 210 MPF102 PACKAGE DIMENSIONS TO-92 (TO-226AB) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N YLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- MPF102 Notes http://onsemi.com 7 MPF102 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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