4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description UL recognized (File # E90700, Volume 2) The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. VDE recognized (File # 102497) - Add option V (e.g., 4N25VM) Applications Power supply regulators Digital logic inputs Microprocessor inputs Schematic Package Outlines 1 6 2 5 3 NC 4 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers January 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 C TOPR Operating Temperature -40 to +100 C TSOL Wave solder temperature (see page 8 for reflow solder profile) PD 260 for 10 sec C 250 mW Total Device Power Dissipation @ TA = 25C Derate above 25C 2.94 EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V IF(pk) PD Forward Current - Peak (300s, 2% Duty Cycle) LED Power Dissipation @ TA = 25C Derate above 25C 3 A 120 mW 1.41 mW/C DETECTOR VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 70 V VECO Emitter-Collector Voltage PD Detector Power Dissipation @ TA = 25C Derate above 25C 7 V 150 mW 1.76 mW/C Electrical Characteristics (TA = 25C unless otherwise specified) Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = 10mA 1.18 1.50 V IR Reverse Leakage Current VR = 6.0V 0.001 10 A DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 100A, IF = 0 70 120 V 7 10 BVECO Emitter-Collector Breakdown Voltage IE = 100A, IF = 0 ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 ICBO Collector-Base Dark Current VCB = 10V CCE Capacitance VCE = 0V, f = 1 MHz V 1 50 nA 20 nA 8 pF Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk) RISO Isolation Resistance VI-O = 500 VDC 1011 CISO Isolation Capacitance VI-O = &, f = 1MHz 0.2 2 pF *Typical values at TA = 25C (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 2 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25C unless otherwise specified) Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTICS CTR VCE (SAT) Current Transfer Ratio, Collector to Emitter Collector-Emitter Saturation Voltage IF = 10mA, VCE = 10V 4N35M, 4N36M, 4N37M 100 H11A1M 50 % H11A5M 30 4N25M, 4N26M H11A2M, H11A3M 20 4N27M, 4N28M H11A4M 10 IF = 10mA, VCE = 10V, TA = -55C 4N35M, 4N36M, 4N37M 40 IF = 10mA, VCE = 10V, TA = +100C 4N35M, 4N36M, 4N37M 40 IC = 2mA, IF = 50mA 4N25M, 4N26M, 4N27M, 4N28M, 0.5 IC = 0.5mA, IF = 10mA 4N35M, 4N36M, 4N37M 0.3 H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 0.4 V AC CHARACTERISTICS TON TOFF Non-Saturated Turn-on Time Turn-off Time IF = 10mA, VCC = 10V, RL = 100 (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M 2 IC = 2mA, VCC = 10V, RL = 100 (Fig. 11) 4N35M, 4N36M, 4N37M 2 IF = 10mA, VCC = 10V, RL = 100 (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 2 IC = 2mA, VCC = 10V, RL = 100 (Fig. 11) 4N35M, 4N36M, 4N37M 2 s 10 s s 10 * Typical values at TA = 25C (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 3 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25C unless otherwise specified) Fig. 2 Normalized CTR vs. Forward Current 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.5 1.4 TA = -55C 1.3 TA = 25C VCE = 5.0V TA = 25C Normalized to IF = 10 mA 1.0 0.8 0.6 1.2 0.4 TA = 100C 1.1 0.2 1.0 0.0 1 10 100 0 2 4 6 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) IF = 5 mA NORMALIZED CTR 12 14 16 18 20 1.0 1.2 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 0.4 Normalized to IF = 10 mA TA = 25C -40 -20 0 20 40 60 80 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 100 10 100 1000 RBE- BASE RESISTANCE (k) TA - AMBIENT TEMPERATURE (C) Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 CTR vs. RBE (Saturated) 100 1.0 0.9 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 Fig. 4 CTR vs. RBE (Unsaturated) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 0.2 -60 8 IF - FORWARD CURRENT (mA) IF - LED FORWARD CURRENT (mA) VCE= 0.3 V 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 TA = 25C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 0.1 IF = 10 mA IF = 5 mA 0.0 10 100 0.001 0.01 1000 RBE- BASE RESISTANCE (k ) (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 0.1 1 10 IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com 4 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves Fig. 8 Normalized ton vs. RBE Fig. 7 Switching Speed vs. Load Resistor 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (s) IF = 10 mA VCC = 10 V TA = 25C 100 Toff 10 Tf Ton 1 Tr 0.1 0.1 1 10 VCC = 10 V IC = 2 mA RL = 100 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 10 100 R-LOAD RESISTOR (k) ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10 V IC = 2 mA RL = 100 0.5 0.4 0.3 0.2 1000 100000 10000 VCE = 10 V TA = 25C 1000 100 10 1 0.1 0.01 0.001 0.1 100 10000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE 1.4 10 1000 RBE- BASE RESISTANCE (k ) 10000 100000 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) RBE- BASE RESISTANCE (k ) TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 11. Switching Time Test Circuit and Waveforms (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 5 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves (Continued) Through Hole 0.4" Lead Spacing 8.13-8.89 6 4 8.13-8.89 6 4 1 3 6.10-6.60 6.10-6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25-0.36 7.62 (Typ.) 3.28-3.53 5.08 (Max.) 0.25-0.36 3.28-3.53 0.38 (Min.) 2.54-3.81 0.38 (Min.) 2.54-3.81 0.20-0.30 2.54 (Bsc) (0.86) 15 (Typ.) 2.54 (Bsc) (0.86) 0.41-0.51 1.02-1.78 0.20-0.30 0.41-0.51 0.76-1.14 10.16-10.80 1.02-1.78 0.76-1.14 Surface Mount (1.78) 8.13-8.89 6 4 (1.52) (2.54) (7.49) 6.10-6.60 8.43-9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25-0.36 3.28-3.53 5.08 (Max.) 0.38 (Min.) 0.20-0.30 2.54 (Bsc) (0.86) 0.16-0.88 (8.13) 0.41-0.51 1.02-1.78 0.76-1.14 Note: All dimensions in mm. (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 6 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Package Dimensions Order Entry Identifier (Example) Option Description No option 4N25M S 4N25SM Standard Through Hole Device SR2 4N25SR2M T 4N25TM 0.4" Lead Spacing VDE 0884 Surface Mount Lead Bend Surface Mount; Tape and Reel V 4N25VM TV 4N25TVM VDE 0884, 0.4" Lead Spacing SV 4N25SVM VDE 0884, Surface Mount SR2V 4N25SR2VM VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 4N25 2 X YY Q 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `7' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code *Note - Parts that do not have the `V' option (see definition 3 above) that are marked with date code `325' or earlier are marked in portrait format. (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 7 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Ordering Information 12.0 0.1 4.5 0.20 2.0 0.05 O1.5 MIN 4.0 0.1 0.30 0.05 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 O1.5 0.1/-0 10.1 0.20 0.1 MAX 24.0 0.3 User Direction of Feed Reflow Profile 300 260C 280 260 >245C = 42 Sec 240 220 200 180 C Time above 183C = 90 Sec 160 140 120 1.822C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 8 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers Carrier Tape Specification Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM (R) FACT FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM SerDesTM (R) UHC Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 (c)2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 9 4NXXM, H11AXM -- General Purpose 6-Pin Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.