inters;| Data Sheet 8A, 1200V Hyperfast Dual Diode The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics (t,, < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49096. Ordering Information PART NUMBER PACKAGE BRAND RHRP8120CG TO-220AB RHR8120C NOTE: When ordering, use the entire part number. RHRP8120CC January 2000 File Number 3966.2 Features * Hyperfast with Soft Recovery.................. <55ns * Operating Temperature................-..004- 175C * Reverse Voltage. .... 0... eee eee 1200V Avalanche Energy Rated Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Packaging JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 Symbol K CATHODE (FLANGE) Ay A2 Absolute Maximum Ratings (Per Leg) Tc = 25C, Unless Otherwise Specified RHRP8120CC UNITS Peak Repetitive Reverse Voltage... 0.0... eee ee VRRM 1200 Vv Working Peak Reverse Voltage... 6.60... eee VRwM 1200 v DC Blocking Voltage .. 1... eet eee VR 1200 Vv Average Rectified Forward Current... 2.0... eee eee IF(AV) 8 A (Tc = 140C) Repetitive Peak Surge Current . 0.0... tees lFRM 16 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current... 0.0.02 tees lFsm 100 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .......0..0.00 000.0 eee Pp 75 WwW Avalanche Energy (See Figures 10 and 11) .... 20. ee Eavi 20 mJ Operating and Storage Temperature... 6. eee Tsta: TJ -65 to 175 C 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000 RHRP8120CC Electrical Specifications (Per Leg) Tc = 25C, Unless Otherwise Specitied SYMBOL TEST CONDITION MIN TYP MAX UNITS VE lpF=8A - - 3.2 Vv IF = 8A, Tc = 150C - - 2.6 V IR VR = 1200V - - 100 HA VR = 1200V, To = 150C - - 500 pA ter lp = 1A, dlp/dt = 200A/us - - 55 ns lp = 8A, dlp/dt = 200A/us - - 65 ns ta lp = 8A, dlp/dt = 200A/us - 30 - ns th lp = 8A, dlp/dt = 200A/us - 20 - ns QrR lp = 8A, dif/dt = 200A/us - 165 - nG Cy VR=10V, IF =0A - 25 - pF ReJc - - 2 C/W DEFINITIONS Vf = Instantaneous forward voltage (pw = 300us, D = 2%). IR = Instantaneous reverse current. try = Reverse recovery time (See Figure 9), summation of tg + tp. tg = Time to reach peak reverse current (See Figure 9). ty = Time from peak Ipiy to projected zero crossing of IRjy based on a straight line from peak Ippy through 25% of IRiy (See Figure 9). Qrr = Reverse recovery charge. Cy = Junction Capacitance. ReJc = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 40 500 100 g Z ~~ ij 10 5 10 a Wu a a 5 oc o a 1 a Ps o $s [ed z we 0.1 9 iu o 175o J100c J 25C o - 4 0.01 0.5 0.001 0 1 2 3 4 5 0 200 400 600 800 1000 1200 Vg, FORWARD VOLTAGE (V) Vr, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersil RHRP8120CC Typical Performance Curves (continued) 60 T T T T_T Tc = 25C, dip/dt = 200A/us 50 g 1 o | i 40 = | F z 30 ic | y eal een -_ ta canner) OQ 20 w th _psensnee seen ~ 40 0 0.5 1 4 8 IF, FORWARD CURRENT (A) FIGURE 3. ty;, tg AND thy CURVES vs FORWARD CURRENT 120 Tc = 175C, dif/dt = 200A/us 100 80 60 40 t, RECOVERY TIMES (ns) 20 0.5 1 4 8 IF, FORWARD CURRENT (A) FIGURE 5. t,;, tg AND th CURVES vs FORWARD CURRENT 100 T T T TT Tc = 100C, dif/dt = 200A/us e 80 ra Le = Pa = 60 > a Ww om > 40 3 ee a ta pga | paosaeerennn o ance een - 20 t 0 0.5 1 4 8 IF, FORWARD CURRENT (A) FIGURE 4. ty; tg AND th CURVES vs FORWARD CURRENT 10 N DC J oPsNX& sa wre SN IF(av), AVERAGE FORWARD CURRENT (A) 100 115 130 145 160 175 Tc, CASE TEMPERATURE (C) FIGURE 6. CURRENT DERATING CURVE 100 80 60 a AN Cy, JUNCTION CAPACITANCE (pF) 0 50 100 150 200 Vr, REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 intersil RHRP8120CC Test Circuits and Waveforms Vee AMPLITUDE AND Rg CONTROL dlf/dt t1 AND t2 CONTROL Ir DUT CURRENT SENSE + } Vpp 1,1 > to _ FIGURE 8. ty; TEST CIRCUIT Imax = 14 L=40mH R<0.102 2 Eave = 1/2LI [VR(aviy(VR(AVL) - Vbp) Q1 =IGBT (BVcgEs > DUT VRjavLy) L R CURRENT 4 SENSE Vpp JL it A Vpp ~ DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT dif FIGURE 9. ty; WAVEFORMS AND DEFINITIONS VAVL FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4 intersil