JANTX2N6802 - Omnirel - Datasheet.Wiki

100 V, 200 V, 400 V & 500 V, N-Channel,

Enhancement Mode MOSFET Power Transistor

JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,

QUALIFIED TO MIL-PRF-19500/557

MECHANICAL OUTLINESCHEMATIC

Pin Connection

Pin 1: Source

Pin 2: Gate

Pin 3: Drain

(Case)

PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25

PART NUMBER VDS, V olts R DS(on) I

D, Amps

2N6796 100 .18 8.0

2N6798 200 .40 5.5

2N6800 400 1.00 3.0

2N6802 500 1.50 2.5

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802

FEATURES

• Low RDS(on)

• Ease of Paralleling

• Qualified to MIL-PRF-19500/557

DESCRIPTION

This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for

Military requirements where small size, high performance and high reliability are required, and in applications such as

switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

7 03 R0

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 100 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ .18 V GS = 10 V, I D= 5.0 A 3

On-State Resistance ------ .195 V GS = 10 V, I D= 8.0 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 80 V, VGS = 0V

Current ------ 250 VDS = 80 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------ 28.5 n C V GS = 10 V, I D= 8A

QGS Gate-to-Source Charge ------ 6.3 n C V DS = 50 V

QGd Gate-to-Drain (“Miller”) Charge ------ 16.6 n C See note 4

D(on) Turn-On Delay Time ------30nsV

DD = 30 V, I D= 5.0 A, R G =7.5

rRise Time ------ 75 ns See note 4

D(off) Turn-Off Delay Time ------40ns

rFall Time ------45ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.5 V T J= 25°C, I S= 8.0A 3, VGS= 0 V 3

trr Reverse Recovery Time ------ 300 ns TJ= 25°C, I F= 8.0 A, di/dt < 100 A/µs

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 5.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 175 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 25 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 8.0 A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N6796 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 8.0 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 5.0 A

DM Pulsed Drain Current132 A

PD@ TC= 25°C Maximum Power Dissipation 25 W

Linear Derating Factor 0.2 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 24.3 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 200 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ .40 V GS = 10 V, I D= 3.5 A 3

On-State Resistance ------ .42 V GS = 10 V, I D= 5.5 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 160 V, VGS = 0V

Current ------ 250 VDS = 160 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------ 42.1 n C V GS = 10 V, I D= 5.5 A

QGS Gate-to-Source Charge ------ 5.3 n C V DS = 100 V

QGd Gate-to-Drain (“Miller”) Charge ------ 28.1 n C See note 4

D(on) Turn-On Delay Time ------30nsV

DD = 77 V, I D= 3.5 A, R G =7.5

rRise Time ------ 50 ns See note 4

D(off) Turn-Off Delay Time ------50ns

rFall Time ------40ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.4 V T J= 25°C, I S= 5.5 A 3, VGS= 0 V 3

trr Reverse Recovery Time ------ 500 ns TJ= 25°C, I F= 5.5 A, di/dt < 100 A/µs

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 5.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 175 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 5.5 A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N6798 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 5.5 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 3.5 A

DM Pulsed Drain Current122 A

PD@ TC= 25°C Maximum Power Dissipation 25 W

Linear Derating Factor 0.2 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 22.0 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 400 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 1.0 V GS = 10 V, I D= 2.0 A 3

On-State Resistance ------ 1.10 V GS = 10 V, I D= 3.0 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 320 V, VGS = 0V

Current ------ 250 VDS = 320 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------33nCV

GS = 10 V, I D= 3.0A

QGS Gate-to-Source Charge ------ 5.8 n C V DS = 200 V

QGd Gate-to-Drain (“Miller”) Charge ------ 16.6 n C See note 4

D(on) Turn-On Delay Time ------30nsV

DD = 176 V, I D= 2 A, R G =7.5

rRise Time ------ 35 ns See note 4

D(off) Turn-Off Delay Time ------55ns

rFall Time ------35ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.4 V T J= 25°C, I S= 3 A 3, VGS= 0 V

trr Reverse Recovery Time ------ 700 ns TJ= 25°C, I F= 3.0 A, di/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 5.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 175 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 3.0 A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N6800 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 3.0 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 2.0 A

DM Pulsed Drain Current114 A

PD@ TC= 25°C Maximum Power Dissipation 25 W

Linear Derating Factor 0.2 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 20.51 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 500 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 1.5 V GS = 10 V, I D= 1.5 A 3

On-State Resistance ------ 1.6 V GS = 10 V, I D= 2.5 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 400 V, VGS = 0V

Current ------ 250 VDS = 400 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------ 29.5 n C V GS = 10 V, I D= 2.5 A

QGS Gate-to-Source Charge ------ 4.5 n C V DS = 250 V

QGd Gate-to-Drain (“Miller”) Charge ------ 28.1 n C See note 4

D(on) Turn-On Delay Time ------30nsV

DD = 225 V, I D= 1.5 A, R G = 7.5

rRise Time ------ 30 ns See note 4

D(off) Turn-Off Delay Time ------55ns

rFall Time ------30ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.4 V T J= 25°C, I S= 2.5 A 3, VGS= 0 V

trr Reverse Recovery Time ------ 900 ns TJ= 25°C, I F= 2.5 A, di/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 5.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 175 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50 V, Starting T J= 25 °C, L = 100 u H + 10%, RG = 25 , Peak IL = 2.5 A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N6802 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 2.5 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 1.5 A

DM Pulsed Drain Current111 A

PD@ TC= 25°C Maximum Power Dissipation 25 W

Linear Derating Factor 0.20 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 2.35 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300 (.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802