1. EMITTER
3. COLLECTOR
2. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCE=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=10V, IB=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CES IC=100μA, IE=0 60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 60 - - V
DC Current Gain
hFE(1) * VCE=5V, IC=10mA 10K - -
hFE(2) * VCE=5V, IC=100mA 10K - -
Collector-Emitter Saturation Voltage VCE(sat) * IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE * VCE=5V, IC=100mA - - 2 V
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃
* Pulse Test : PW≤300μS, Duty Cycle≤2%.